Two-dimensional numerical simulations of 1/f noise by GR mechanisms in thin film transistors: Effects of induced defect technology
2007 ◽
Vol 47
(9-11)
◽
pp. 1419-1423
◽
2014 ◽
Vol 13
(3)
◽
pp. 585-592
◽
Keyword(s):
Keyword(s):
Keyword(s):
Keyword(s):
2020 ◽
Vol 12
(4)
◽
pp. 4749-4754
◽
Keyword(s):
Keyword(s):
2014 ◽
Vol 136
(46)
◽
pp. 16176-16184
◽
Keyword(s):