Synthesis, Characterisation and Antibacterial Properties of Silicone–Silver Thin Film for the Potential of Medical Device Applications

Silver (Ag) particles have sparked considerable interest in industry and academia, particularly for health and medical applications. Here, we present the “green” and simple synthesis of an Ag particle-based silicone (Si) thin film for medical device applications. Drop-casting and peel-off techniques were used to create an Si thin film containing 10–50% (v/v) of Ag particles. Electro impedance spectroscopy (EIS), X-ray diffraction analysis (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX), and tensile tests were used to demonstrate the electrical conductivity, crystallinity, morphology-elemental, and mechanical properties, respectively. The oriented crystalline structure and excellent electronic migration explained the highest conductivity value (1.40 × 10−5 S cm−1) of the 50% Ag–Si thin film. The findings regarding the evolution of the conductive network were supported by the diameter and distribution of Ag particles in the Si film. However, the larger size of the Ag particles in the Si film resulted in a lower tensile stress of 68.23% and an elongation rate of 68.25% compared to the pristine Si film. The antibacterial activity of the Ag–Si film against methicillin-resistant Staphylococcus aureus (MRSA), Bacillus cereus (B. cereus), Klebsiella pneumoniae (K. pneumoniae), and Pseudomonas aeruginosa (P. aeruginosa) was investigated. These findings support Si–Ag thin films’ ability to avoid infection in any medical device application.

Extraordinary optical transmission in silicon nanoholes

In this work, for the first time, a study was conducted of the existence of Extraordinary Optical Transmission (EOT) in Silicon (Si) thin films with subwavelength holes array and high excess carrier concentration. Typically EOT is studied in opaque perforated metal films. Using Si would bring EOT and its many applications to the silicon photonics realm and the mid-IR range. Since Si thin film is a semi-transparent film in mid-IR, a generalization was proposed of the normalized transmission metric used in literature for EOT studies in opaque films. The plasma dispersion effect was introduced into the studied perforated Si film through either doping or carriers’ generation. Careful consideration for the differences in optical response modeling in both cases was given. Full-wave simulation and analysis showed an enhanced transmission when using Si with excess carriers, mimicking the enhancement reported in perforated metallic films. EOT was found in the mid-IR instead of the visible range which is the case in metallic films. The case of Si with generated excess carriers showed a mid-IR EOT peak reaching 157% around 6.68 µm, while the phosphorus-doped Si case showed a transmission enhancement of 152% around 8.6 µm. The effect of varying the holes’ dimensions and generated carriers’ concentration on the transmission was studied. The analogy of the relation between the fundamental mode cutoff and the EOT peak wavelength in the case of Si to the case of metal such as silver was studied and verified. The perforated Si thin film transmission sensitivity for a change in the refractive index of the holes and surroundings material was investigated. Also, a study of the device potential in sensing the hole and surroundings materials that have almost the same refractive index yet with different absorption fingerprints was performed as well.

A new simplified method for efficient extraction of solar cells and modules parameters from datasheet information

An accurate and straightforward estimation of solar cells and modules parameters from the manufacturer’s datasheet is essential for the performance assessment, simulation, design, and quality control. In this work, a simple and efficient technique is reported to extract the parameters of solar cells and modules, namely ideality factor (n), series resistance (Rs), shunt resistance (Rsh), photocurrent (Iph) and saturation current (Io), from datasheet information. The method is based on defining the peak position of the function \(f\left(n,{R}_{sh}\right)=n\left({R}_{sh\_max}-{R}_{sh}\right)\), at which the five parameters are extracted. It was validated on four different technologies of solar cells and modules, including Poly-Si, Mono-Si, thin film and multijunction. Results showed that a simple and efficient extraction of the parameters can be realized by using this technique compared to that of the reported methods in literature.

Selective Transfer of Si Thin-Film Microchips by SiO2 Terraces on Host Chips for Fluidic Self-Assembly

Fluidic self-assembly is a versatile on-chip integration method. In this scheme, a large number of semiconductor microchips are spontaneously deposited onto a host chip. The host chip typically comprises a Si substrate with an array of pockets at the designated microchip placement sites. In this study, we installed an SiO2 layer on the terrace region between the pockets of the host chip, to reduce the attraction with the Si microchips. By the SiO2-topped terrace scheme, we demonstrated a significant enhancement in the deposition selectivity of the Si microchips to the pocket sites, relative to the case of the conventional Si-only host chip. We theoretically explained the deposition selectivity enhancement in terms of the van der Waals interaction. Furthermore, our quantitative analysis implicated a potential applicability of the commonly used interlayer dielectrics, such as HfO2, silsesquioxanes, and allyl ethers, directly as the terrace component.