Spin-filtering effects of double-barrier magnetic tunnel junctions with an indium phosphide (InP) spacer

2021 ◽  
Vol 263 ◽  
pp. 114818
Author(s):  
Reza Daqiq
2015 ◽  
Vol 115 (15) ◽  
Author(s):  
B. S. Tao ◽  
H. X. Yang ◽  
Y. L. Zuo ◽  
X. Devaux ◽  
G. Lengaigne ◽  
...  

2005 ◽  
Vol 86 (8) ◽  
pp. 082501 ◽  
Author(s):  
T. Nozaki ◽  
A. Hirohata ◽  
N. Tezuka ◽  
S. Sugimoto ◽  
K. Inomata

Author(s):  
Li Liu ◽  
Shizhuo Ye ◽  
Jin He ◽  
Qijun Huang ◽  
Hao Wang ◽  
...  

Abstract Recently, the study on two-dimensional materials expands to the field of spintronics. The intrinsically ferromagnetic van der Waals materials such as CrI3 and CrBr3 receive much attention due to nearly 100% spin polarization and good stability, resulting in excellent performance in magnetic tunnel junctions. In this work, we design the magnetic tunnel junctions of Cu/CrI3/Cu and Cu/CrBr3/Cu with the electrodes of Cu(111) and the tunneling barrier of 4-monolayer CrI3 or CrBr3. Our first-principle calculations combined with nonequilibrium Green’s function method indicate that the CrBr3-based MTJ has a larger maximum tunneling magnetoresistance ratio than the CrI3-based MTJ. In a wide bias voltage range, the CrI3-based MTJ can maintain high spin filtering performance, while that of the CrBr3-based MTJ degrades sharply as the bias voltage increases. It is noted that negative differential resistance effect is observed in the CrBr3-based MTJ. The differences of spin transport properties between the CrI3-based MTJ and the CrBr3-based MTJ are clarified in terms of the inside device physics, including the spin-dependent projected density of states, band structures, Bloch states, and the electron density difference. This work provides some physical insights for the design of 2D van der Waals MTJ.


2006 ◽  
Vol 126 (2-3) ◽  
pp. 112-119 ◽  
Author(s):  
C. Tiusan ◽  
J. Faure-Vincent ◽  
M. Sicot ◽  
M. Hehn ◽  
C. Bellouard ◽  
...  

2006 ◽  
Vol 355 (3) ◽  
pp. 243-246 ◽  
Author(s):  
A. Vedyayev ◽  
N. Ryzhanova ◽  
B. Dieny ◽  
N. Strelkov

2019 ◽  
Vol 21 (5) ◽  
pp. 2734-2742 ◽  
Author(s):  
Jin Li ◽  
Maoyun Di ◽  
Zhi Yang ◽  
Li-Chun Xu ◽  
Yongzhen Yang ◽  
...  

By designing two kinds of molecular magnetic tunnel junctions based on 6,6,12-graphyne and zigzag graphene nanoribbons, the spin-filtering and tunneling magnetoresistance effects of spintronic devices can be dramatically enhanced.


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