Effects of RTA temperatures on conductivity and micro-structures of boron-doped silicon nanocrystals in Si-rich oxide thin films

2016 ◽  
Vol 47 ◽  
pp. 7-11 ◽  
Author(s):  
Junjun Huang ◽  
Li Wang ◽  
Hongyan Sun ◽  
Hui Wang ◽  
Min Gao ◽  
...  
1997 ◽  
Vol 26 (10) ◽  
pp. 995-996 ◽  
Author(s):  
Isao Hasegawa ◽  
Koji Shibusa ◽  
Satoshi Kobayashi ◽  
Shuichi Nonomura ◽  
Shoji Nitta

2016 ◽  
Vol 30 (27) ◽  
pp. 1650343 ◽  
Author(s):  
S. Kerli

The cobalt oxide and boron-doped cobalt oxide thin films were produced by spray deposition method. All films were obtained onto glass and fluorine-doped tin oxide (FTO) substrates at 400[Formula: see text]C and annealed at 550[Formula: see text]C. We present detailed analysis of the morphological and optical properties of films. XRD results show that boron doping disrupts the structure of the films. Morphologies of the films were investigated by using a scanning electron microscopy (SEM). Optical measurements indicate that the band gap energies of the films change with boron concentrations. The electrochemical supercapacitor performance test has been studied in aqueous 6 M KOH electrolyte and with scan rate of 5 mV/s. Measurements show that the largest capacitance is obtained for 3% boron-doped cobalt oxide film.


2018 ◽  
Author(s):  
Marta Chrostowski ◽  
Rafaël Peyronnet ◽  
Wanghua Chen ◽  
Nicolas Vaissiere ◽  
José Alvarez ◽  
...  

2005 ◽  
Vol 40 (19) ◽  
pp. 5285-5289 ◽  
Author(s):  
Radhouane Bel Hadj Tahar ◽  
Noureddine Bel Hadj Tahar

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