low temperature photoluminescence
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Low-temperature photoluminescence study of GeV centres in HPHT diamond

2021 ◽  
pp. 118556
Author(s):  
A.A. Razgulov ◽  
S.G. Lyapin ◽  
A.P. Novikov ◽  
E.A. Ekimov
Keyword(s):  
Low Temperature ◽  
Photoluminescence Study ◽  
Low Temperature Photoluminescence

Low-temperature photoluminescence study of SnV centers in HPHT diamond

2021 ◽  
pp. 108379
Author(s):  
A.A. Razgulov ◽  
S.G. Lyapin ◽  
A.P. Novikov ◽  
E.A. Ekimov
Keyword(s):  
Low Temperature ◽  
Photoluminescence Study ◽  
Low Temperature Photoluminescence

scholarly journals MOVPE Growth of Mg-doped GaAs Films

2020 ◽  
Author(s):  
Xiejia
Keyword(s):  
Atomic Force Microscopy ◽  
Low Temperature ◽  
Force Microscopy ◽  
Atomic Force ◽  
Movpe Growth ◽  
Gaas Films ◽  
Growth Method ◽  
P Type ◽  
Low Temperature Photoluminescence ◽  
Mg Doped

The short research of optimization of the growth method to obtain p-type GaAs (001) layers using Si as the dopant was reported in this work. Atomic force microscopy was used to analyze the surface morphology and low-temperature photoluminescence also used to confirm the p-type of the layers.

Low-Temperature Photoluminescence Properties of the Monolayer MoS2 Nanomaterals

2020 ◽  
Vol 212 (1) ◽  
pp. 147-155
Author(s):  
Y. J. Zhai ◽  
X. L. Chen ◽  
J. H. Li ◽  
X. Y. Chu ◽  
Y. Zhang
Keyword(s):  
Low Temperature ◽  
Monolayer Mos2 ◽  
Photoluminescence Properties ◽  
Low Temperature Photoluminescence

scholarly journals Growth and Characterizations of Mg-doped GaAs Films

2020 ◽  
Author(s):  
Dong Fong
Keyword(s):  
Atomic Force Microscopy ◽  
Low Temperature ◽  
Surface Morphology ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gaas Films ◽  
Growth Method ◽  
P Type ◽  
Low Temperature Photoluminescence ◽  
Mg Doped

The short research of optimization of the growth method to obtain p-type GaAs (001) layers using Si as the dopant was reported in this work. Atomic force microscopy was used to analyze the surface morphology and low-temperature photoluminescence also used to confirm the p-type of the layers.

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