Material removal and surface generation mechanisms in diamond wire sawing of silicon crystal

2019 ◽  
Vol 103 ◽  
pp. 104642 ◽  
Author(s):  
Yufei Gao ◽  
Peiqi Ge ◽  
Lei Zhang ◽  
Wenbo Bi
Keyword(s):  
Material Removal ◽  
Silicon Crystal ◽  
Surface Generation ◽  
Diamond Wire ◽  
Diamond Wire Sawing ◽  
Generation Mechanisms

scholarly journals Simulation of the ductile machining mode of silicon

2021 ◽  
Author(s):  
Hagen Klippel ◽  
Stefan Süssmaier ◽  
Matthias Röthlin ◽  
Mohamadreza Afrasiabi ◽  
Uygar Pala ◽  
...  
Keyword(s):  
Brittle Material ◽  
Material Removal ◽  
Machining Process ◽  
Ductile Material ◽  
Diamond Wire ◽  
Ductile Machining ◽  
Mesh Free ◽  
Diamond Wire Sawing ◽  
Material Removal Mode ◽  
Brittle Material Removal

AbstractDiamond wire sawing has been developed to reduce the cutting loss when cutting silicon wafers from ingots. The surface of silicon solar cells must be flawless in order to achieve the highest possible efficiency. However, the surface is damaged during sawing. The extent of the damage depends primarily on the material removal mode. Under certain conditions, the generally brittle material can be machined in ductile mode, whereby considerably fewer cracks occur in the surface than with brittle material removal. In the presented paper, a numerical model is developed in order to support the optimisation of the machining process regarding the transition between ductile and brittle material removal. The simulations are performed with an GPU-accelerated in-house developed code using mesh-free methods which easily handle large deformations while classic methods like FEM would require intensive remeshing. The Johnson-Cook flow stress model is implemented and used to evaluate the applicability of a model for ductile material behaviour in the transition zone between ductile and brittle removal mode. The simulation results are compared with results obtained from single grain scratch experiments using a real, non-idealised grain geometry as present in the diamond wire sawing process.

Study of Electroplated Nickel Layer Thickness and Saw Parameters on Cutting Performance in Diamond Wire Sawing of Sapphire Ingots

2015 ◽  
Vol 656-657 ◽  
pp. 450-455 ◽  
Author(s):  
Rong Hwei Yeh ◽  
H.Y. Chen ◽  
Cheng Kuo Lee ◽  
A.H. Tan
Keyword(s):  
Wear Rate ◽  
Layer Thickness ◽  
Material Removal Rate ◽  
Feed Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Nickel Layer ◽  
Diamond Wire ◽  
Wire Tension ◽  
Diamond Wire Sawing

A production-scale multiwire saw machine and 4 inch sapphire ingots were used in this study. The diamond wire used in the study had a core diameter of 0.1mm with an attached diamond particle size of 8–12μm. This study uses the Taguchi method and Grey relational analysis on the key diamond wire parameters which are electroplated nickel layer thickness, diamond wire tension, diamond wire speed and sapphire ingot feed rate, in order to simultaneously optimize the cutting performance in the diamond wire sawing of sapphire ingots. Based on the analysis, the nickel layer thickness and wire speed are the first and second most significant factors with 31.7 and 29.9% effects on cutting performances. The optimal control factors were then simultaneously evaluated for Ra, material removal rate, diamond wire wear rate and TTV and were found at optimization to be 14 μm nickel layer thickness, 15NT wire tension, 800m/min wire speed and 0.2mm/min feed rate, respectively. Compared with current standard condition, this improved process obtained from the optimization of diamond wire electroplated nickel layer thickness and saw machine parameters in the diamond wire sawing of sapphire ingots can achieve a 33% lower Ra, a 20% lower diamond wear rate, a 13% lower TTV and a 20% higher material removal rate, simultaneously.

Analytical prediction of subsurface microcrack damage depth in diamond wire sawing silicon crystal

2020 ◽  
Vol 112 ◽  
pp. 105015 ◽  
Author(s):  
Liyuan Wang ◽  
Yufei Gao ◽  
Xinying Li ◽  
Tianzhao Pu ◽  
Youkang Yin
Keyword(s):  
Silicon Crystal ◽  
Analytical Prediction ◽  
Diamond Wire ◽  
Damage Depth ◽  
Diamond Wire Sawing

Experimental Investigation on Brittle-Ductile Transition in Electroplated Diamond Wire Saw Machining Single Crystal Silicon

2010 ◽  
Vol 431-432 ◽  
pp. 265-268 ◽  
Author(s):  
Yu Fei Gao ◽  
Pei Qi Ge
Keyword(s):  
Single Crystal ◽  
Material Removal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Diamond Wire ◽  
Brittle Ductile Transition ◽  
Wire Saw ◽  
Diamond Wire Saw ◽  
R Value ◽  
Material Removal Mode

Based on reciprocating electroplated diamond wire saw (REDWS) slicing experiments, a study on REDWS machining brittle-ductile transition of single crystal silicon was introduced. The machined surfaces and chips were observed by using Scanning Electron Microscope (SEM), and some experimental evidences of the change of material removal mode had been obtained. The experimental results indicate there is a close relationship between material removal mode and the ratio r value of ingot feed speed and wire speed, through controlling and adjusting the r value, the material removal mode can be complete brittle, partial ductile and near-ductile removal.

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