Scanning-probe-microscopy of polyethylene terephthalate surface treatment by argon ion beam

Author(s):  
Francisco Espinoza-Beltran ◽  
Isaac C. Sanchez ◽  
Beatriz L. España-Sánchez ◽  
Josué D. Mota-Morales ◽  
Salvador Carrillo ◽  
...  
2008 ◽  
Vol 2 (1) ◽  
pp. 64-69 ◽  
Author(s):  
Osamu Takaoka ◽  

SIINT has supplied high-accuracy microprocessing devices since 1985. As photomask defects are very minute, high-accuracy positioning as well as highaccuracy processing and height-controllability to secure printability are required of such devices. Conventionally devices based on focused ion beam (FIB) technology have been adopted to meet requirements for specifications. But there remain an increasing number of defects which cannot be covered by FIB. Recently developed, therefore, is a defect-repairing system to which scanning probe microscopy (SPM) has been applied in order to make up for the shortcomings inherent in FIB. This paper is intended to report on photomask-defect-repairing system based on FIB and SPM for industrial application which requires precision-positioning.


2012 ◽  
Vol 41 (1) ◽  
pp. 41-50 ◽  
Author(s):  
B. G. Konoplev ◽  
O. A. Ageev ◽  
V. A. Smirnov ◽  
A. S. Kolomiitsev ◽  
N. I. Serbu

Author(s):  
Kevin M. Shakesheff ◽  
Martyn C. Davies ◽  
Clive J. Roberts ◽  
Saul J. B. Tendler ◽  
Philip M. Williams

Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.


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