Comprehensive study of focused ion beam induced lateral damage in silicon by scanning probe microscopy techniques

Author(s):  
M. Rommel ◽  
G. Spoldi ◽  
V. Yanev ◽  
S. Beuer ◽  
B. Amon ◽  
...  
2008 ◽  
Vol 2 (1) ◽  
pp. 64-69 ◽  
Author(s):  
Osamu Takaoka ◽  

SIINT has supplied high-accuracy microprocessing devices since 1985. As photomask defects are very minute, high-accuracy positioning as well as highaccuracy processing and height-controllability to secure printability are required of such devices. Conventionally devices based on focused ion beam (FIB) technology have been adopted to meet requirements for specifications. But there remain an increasing number of defects which cannot be covered by FIB. Recently developed, therefore, is a defect-repairing system to which scanning probe microscopy (SPM) has been applied in order to make up for the shortcomings inherent in FIB. This paper is intended to report on photomask-defect-repairing system based on FIB and SPM for industrial application which requires precision-positioning.


2012 ◽  
Vol 41 (1) ◽  
pp. 41-50 ◽  
Author(s):  
B. G. Konoplev ◽  
O. A. Ageev ◽  
V. A. Smirnov ◽  
A. S. Kolomiitsev ◽  
N. I. Serbu

2013 ◽  
Vol 21 (5) ◽  
pp. 40-45

Microscopy Today congratulates the fourth annual group of Innovation Award winners. The ten innovations described below move several microscopy techniques forward: light microscopy, scanning probe microscopy, electron microscopy, ion microscopy, and hybrid microscopy-analysis methods. These innovations will make imaging and analysis more powerful, more flexible, more productive, and easier to accomplish.


RSC Advances ◽  
2017 ◽  
Vol 7 (67) ◽  
pp. 42393-42397
Author(s):  
Ting Su

Surface potential of undoped ZnO film has been studied by a combined use of PFM and KPFM techniques.


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