Spatially resolved magnetic resonance studies of swift heavy ion induced defects and radiolysis products in LiF crystals

2019 ◽  
Vol 441 ◽  
pp. 70-78 ◽  
Author(s):  
Michael Ditter ◽  
Manuel Becher ◽  
Sebastian Orth ◽  
Kurt Schwartz ◽  
Christina Trautmann ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Heavy Ion ◽  
Magnetic Resonance Studies ◽  
Spatially Resolved ◽  
Radiolysis Products ◽  
Swift Heavy Ion ◽  
Induced Defects

Investigation of Swift Heavy Ion Irradiated Reduced Graphene Oxide (rGO)/Molybdenum Disulfide (MoS2) Nanocomposite Using Raman Spectroscopy

2020 ◽  
Vol 20 (5) ◽  
pp. 3174-3181
Author(s):  
Jyoti Shakya ◽  
P. K. Kasana ◽  
T. Mohanty
Keyword(s):  
Raman Spectroscopy ◽  
Graphene Oxide ◽  
Molybdenum Disulfide ◽  
Reduced Graphene Oxide ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Swift Heavy Ion ◽  
Reduced Graphene ◽  
Raman Modes ◽  
Induced Defects

In this work, a few layer molybdenum disulfide (MoS2) and reduced graphene oxide (rGO) nanocomposite have been synthesized by liquid exfoliation method. The morphological and structural properties are analyzed using scanning electron microscopy and X-ray diffraction technique. The optical properties are also investigated using absorption and Raman spectroscopy. This report presents quantification of swift heavy ion irradiation induced defects using Raman spectroscopy. We found both Raman mode E12g and A1g corresponding to MoS2 and Raman modes of rGO are strongly affected by increasing ions doses. The defect induced lattice strain in the rGO/MoS2 nanocomposite is also estimated from Raman spectroscopy. MoS2 layers are found to be much more sensitive than rGO in the rGO/MoS2 nanocomposite. These types of study further used in device based application of rGO/MoS2 nanocomposite system.

Characterization of swift heavy ion-induced defects in Fe-Rh alloy by using positron beam technique

2007 ◽  
Vol 4 (10) ◽  
pp. 3530-3533 ◽  
Author(s):  
Fuminobu Hori ◽  
Masafumi Fukuzumi ◽  
Atsuo Kawasuso ◽  
Yoshihiro Zushi ◽  
Yasuhiro Chimi ◽  
...  
Keyword(s):  
Positron Beam ◽  
Heavy Ion ◽  
Swift Heavy Ion ◽  
Induced Defects ◽  
Beam Technique

Effect of 100 MeV Ag+7 Ion Irradiation on Electrical Properties of Ag/La0.7Sr0.3MnO3/Ag Planar Structures

2013 ◽  
Vol 209 ◽  
pp. 18-22
Author(s):  
Komal H. Bhavsar ◽  
Utpal S. Joshi ◽  
Bhaumik V. Mistry ◽  
U.V. Chhaya ◽  
S.A. Khan ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Random Access ◽  
Hysteresis Loops ◽  
High Resistance State ◽  
Heavy Ion ◽  
Solution Deposition ◽  
Swift Heavy Ion ◽  
Resistance State ◽  
Shi Irradiation ◽  
Induced Defects

Swift heavy ion (SHI) irradiation of materials induces variety of functionalities and tenability in advance materials. Recent observations of electrical switching in perovskite oxides have triggered a lot of interest for its potential use as non volatile random access memory (NVRAM). We report on the resistance switching induced by swift heavy ion SHI irradiation in La0.7Sr0.3MnO3 (LSMO) thin films grown on SiO2 substrates by chemical solution deposition technique. Well defined hysteresis loops with sharp on-off transition in the I-V curves were observed for the sample irradiated with 100 MeV Ag+7 ions at 1x1012 ions/cm2, indicating that the sample possess low resistance state (LRS) and high resistance state (HRS). Symmetrical resistance ratio (Rhigh/Rlow) of ~ 330% at -1.7 V has been achieved whereas the pristine samples showed only linear I-V characteristics. The RS is bipolar and may be attributed to SHI induced defects in the device. Such defect induced resistive switching has recently been proposed theoretically and our results are direct evidence of the phenomenon.

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