Photo-induced changes of the short wavelength absorption edge in some Ge–As–S amorphous thin films

2004 ◽  
Vol 27 (3) ◽  
pp. 549-557 ◽  
Author(s):  
M. Štábl ◽  
L. Tichý
Keyword(s):  
Thin Films ◽  
Absorption Edge ◽  
Short Wavelength ◽  
Amorphous Thin Films ◽  
Wavelength Absorption ◽  
Induced Changes

Spectroscopic ellipsometry characterization of spin-coated Ge25S75 chalcogenide thin films

2017 ◽  
Vol 89 (4) ◽  
pp. 437-449 ◽  
Author(s):  
Petr Janicek ◽  
Stanislav Slang ◽  
Karel Palka ◽  
Miroslav Vlcek
Keyword(s):  
Thin Films ◽  
Spectroscopic Ellipsometry ◽  
Absorption Edge ◽  
Short Wavelength ◽  
Optical Constants ◽  
Annealing Temperature ◽  
Optical Transition ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Wavelength Absorption

AbstractSpectroscopic ellipsometry study on spin-coated non-toxic Ge25S75 thin films annealed at different temperatures were conducted. Multi sample analysis with two sets of samples spin-coated onto soda-lime glass and onto silicon wafers was utilized. Optical constants (refractive index n and extinction coefficient k) of these films were determined from ellipsometric data recorded over a wide spectral range (0.05–6 eV). Different parametrization of Ge25S75 complex dielectric permittivity which consists of a Tauc-Lorentz or Cody-Lorentz oscillator describing the short wavelength absorption edge, a Lorentz or Gauss oscillators describing phonon absorption or optically active absorption of alkyl ammonium germanium salts in the middle infrared part of spectra is discussed. Using a Mott-Davis model, the decrease in local disorder with increasing annealing temperature is quantified from the short wavelength absorption edge onset. Using the Wemple-DiDomenico single oscillator model for the transparent part of the optical constants spectra, a decrease in the centroid distance of the valence and conduction bands with increasing annealing temperature is shown and increase in intensity of the inter-band optical transition due to annealing temperature occurs. Intensity of absorption near 3000 cm−1 could be used as alternative method to evaluation of quality of prepared films.

Temperature dependence of the absorption edge in CdTe:O amorphous thin films

1992 ◽  
Vol 84 (4) ◽  
pp. 409-411 ◽  
Author(s):  
F.J Espinoza-Beltrán ◽  
F Sánchez-Sinencio ◽  
O Zelaya-Angel ◽  
E López-Cruz ◽  
J González-Hernández ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Absorption Edge ◽  
Amorphous Thin Films

The optical absorption edge of amorphous thin films of silicon monoxide

1984 ◽  
Vol 19 (6) ◽  
pp. 1737-1748 ◽  
Author(s):  
S. K. J. Al-Ani ◽  
K. I. Arshak ◽  
C. A. Hogarth
Keyword(s):  
Thin Films ◽  
Optical Absorption ◽  
Absorption Edge ◽  
Silicon Monoxide ◽  
Optical Absorption Edge ◽  
Amorphous Thin Films
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