Gamma radiation-induced changes on the structural and optical properties of aluminum phthalocyanine chloride thin films

2015 ◽  
Vol 46 ◽  
pp. 115-121 ◽  
Author(s):  
M.M. El-Nahass ◽  
B.A. Khalifa ◽  
I.M. Soliman
2005 ◽  
Vol 480-481 ◽  
pp. 13-20 ◽  
Author(s):  
Khalil Arshak ◽  
Olga Korostynska ◽  
John Henry

This paper reports on the gamma radiation-induced changes in thin oxide films deposited by thermal vacuum technique. Structures of various oxides thin films, such as In2O3, SiO and TeO2 and their mixtures in different proportions were studied. The influence of gamma radiation on In2O3/SiO films has resulted in significant changes in the microstructure of this film. Some kind of agglomerations with variable sizes in the range 0.5-3 µm has occurred. After a dose of 8160 µSv an evidence of partial crystallisation was observed with X-ray diffraction. Structural changes in TeO2 thin film were explored by means of Raman spectroscopy. After they have been exposed to g- radiation, a strong peak appeared at 448.83 cm-1, indicating further transformation to g-TeO2 modification.


Author(s):  
Mahdi M. Mutter ◽  
Habiba Kadhum Atty ◽  
Areej Adnan Hateef

The purpose of this research is studying the effect of gamma radiation on the structural and optical properties of iron oxide Fe2O3thin films. The technique used for prepared the thin films was thermal chemical spray. The effect of Co60irradiation on the structural and optical properties of the thin films was investigated. The crystal structure were studied by XRD pattern. The surface tested from crack and defect was looke by used microscope image. The absorption and transmission spectra by used UV/VIS for the as deposited and irradiated thin films. The energy gap and absorption coefficient were studied. It's found that the energy gap for the un-irradiated sample was 2.3 eV and than after exposed to gamma radiation at (25,50,75,100 and 125) Gy the energy gap decreased and above 5o Gy was increasing. The absorption coefficient increased until (12x104) cm-1at 50 Gy and than was decreasing to (2x104) cm-1at 125 Gy. The effect of radiation on the structural and optical properties was positive at the levels of irradiation used.


2018 ◽  
Vol 23 (3) ◽  
pp. 230-239
Author(s):  
E.P. Zaretskaya ◽  
◽  
V.F. Gremenok ◽  
A.V. Stanchik ◽  
A.N. Pyatlitski ◽  
...  

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.


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