Timepix3: Temperature influence on X-ray measurements in counting mode with Si sensor

2021 ◽  
Vol 141 ◽  
pp. 106535
Author(s):  
Martin Urban ◽  
Daniela Doubravová
2007 ◽  
Vol 45 (21) ◽  
pp. 2966-2971 ◽  
Author(s):  
W. Salgueiro ◽  
A. Somoza ◽  
I. L. Torriani ◽  
A. J. Marzocca

2003 ◽  
Vol 37 (6) ◽  
pp. 320-321
Author(s):  
V. I. Lipatkin ◽  
V. V. Kan'shin ◽  
A. S. Lelyukhin

2010 ◽  
Vol 660-661 ◽  
pp. 646-651
Author(s):  
José Vitor C. Souza ◽  
Pedro José Castro ◽  
Maria do Carmo de Andrade Nono ◽  
Sergio Luiz Mineiro

Dielectric ceramics have been widely investigated and used for microwave applications such as resonators and filters. The present study deals with the influence of sintering temperature on microwave dielectric properties of TiO2 ceramics with 10, 20, and 30 wt% ZrO2. Three compositions have been developed through mixing procedures and then tested for each sintering temperature: 1500 and 1400 °C. X-ray diffraction and scanning electron microscopy are carried out aiming to explain the ceramic behavior of each sample. The dielectric constants of different ceramics for both temperatures varied from 85.4 to 62.6, while their quality factor due to dielectric losses varied from 3110 to 1630. The Q decrease is attributed to the non uniform grain growth and to the obtained crystalline phases. The best microwave parameters were obtained for the ceramics sintered at 1400 °C, which can be applied in microwave circuits as dielectric resonators.


2010 ◽  
Vol 37 (6Part8) ◽  
pp. 3356-3357
Author(s):  
A Panse ◽  
A Jain ◽  
W Wang ◽  
R Yao ◽  
D Bednarek ◽  
...  

2015 ◽  
Author(s):  
Miroslaw Zoladz ◽  
Jacek Rauza ◽  
Krzysztof Kasinski ◽  
Piotr Maj ◽  
Pawel Grybos

1992 ◽  
Vol 263 ◽  
Author(s):  
A. Vila ◽  
A. Cornet ◽  
J.R. Morante ◽  
D.I. Westwood

ABSTRACTA Transmission Electron Microscopy (TEM) study of In0.53Ga0.47As Molecular Beam Epitaxy films grown at different temperatures onto misoriented Si (100) substrates is presented. The evolution of the density of the different kind of defects is discussed as a function of the growth temperature in the range between 200 and 500° C. The results are compared with the characterization techniques of Double Crystal X-Ray Diffraction and Hall effect.


Cerâmica ◽  
2020 ◽  
Vol 66 (379) ◽  
pp. 256-261
Author(s):  
M. L. G. Pereira ◽  
D. S. S. Figueira ◽  
B. R. Girolamo ◽  
F. Vernilli

Abstract This is a study about the synthesis of SiC from rice husk. The SiC production was carried out in two stages, the first one being the rice husk carbonization under vacuum, at the temperature range from 270 to 650 °C, and the second stage was the pyrolysis of the carbonized rice husk, at the temperature range from 1300 to 1800 °C and 120 min isotherms. The rice husk was characterized by X-ray fluorescence, and the reaction products were characterized by X-ray diffraction and scanning electron microscopy. The temperature influence on pyrolysis was demonstrated. SiC formation occurred in samples treated over 1600 °C, while at lower temperatures, it was possible to observe the secondary formation of cristobalite, tridymite, and quartz. In this study, it was possible to calculate the yield of SiC production as a function of the pyrolysis temperature of the carbonized rice husk.


2011 ◽  
Vol 1 (3) ◽  
pp. 363-367 ◽  
Author(s):  
Monamie Sanyal ◽  
Benjamin Schmidt-Hansberg ◽  
Michael F. G. Klein ◽  
Alexander Colsmann ◽  
Carmen Munuera ◽  
...  

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