Junction area dependent performance of graphene/silicon based self-powered Schottky photodiodes

2021 ◽  
pp. 112829
Author(s):  
Mehmet Fidan ◽  
Özhan Ünverdi ◽  
Cem Çelebi
ACS Nano ◽  
2013 ◽  
Vol 7 (3) ◽  
pp. 2808-2813 ◽  
Author(s):  
Ya Yang ◽  
Hulin Zhang ◽  
Yan Liu ◽  
Zong-Hong Lin ◽  
Sangmin Lee ◽  
...  

2017 ◽  
Vol 8 (3) ◽  
pp. 1995-2002 ◽  
Author(s):  
Miguel Aller Pellitero ◽  
Anton Guimerà ◽  
Maria Kitsara ◽  
Rosa Villa ◽  
Camille Rubio ◽  
...  

Electrochromic materials can be used in self-powered electrochemical sensors to display quantitative information without the need for silicon-based electronics or external instrumentation.


Nano Energy ◽  
2020 ◽  
Vol 70 ◽  
pp. 104544 ◽  
Author(s):  
Baoyu Wang ◽  
Yu Zhu ◽  
Jianqi Dong ◽  
Jian Jiang ◽  
Qiao Wang ◽  
...  

1995 ◽  
Vol 377 ◽  
Author(s):  
John N. Bullock ◽  
Yueqin Xu ◽  
David Benson ◽  
Howard M. Branz

ABSTRACTSelf-powered “smart” windows utilize an electro-optic transmittance modulator based on electrochromic (EC) thin films that exhibit reversible and controlled changes in optical properties with an applied voltage between 0.7 and 2.0 V. Existing window designs require an external electrical connection, which may be economically unfeasible. This problem is solved by the tandem photovoltaic-electrochromic device, in which a wide-gap amorphous silicon-based alloy photovoltaic device is deposited together with an electrochromic optical transmittance modulator in a monolithic device on a single substrate. In this paper, we discuss our proposed monolithic photovoltaic-electrochromic device.We also present studies of transparent, wide-gap (1.8 to 2.2 eV) amorphous silicon-carbon thin films and p-i-n devices designed for use in the photovoltaic-electrochromic device. These photovoltaic cells can operate at low current (<1 mA/cm2) because a total injected charge of only 60 μC/cm2 will darken the EC layer to a visible transmission of 5%, but they need a high open-circuit voltage (>1.0 V) and high transparency (≈70%). We present our progress toward these design targetxxss.


1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-101-Pr8-107
Author(s):  
F. J. Martí ◽  
A. Castro ◽  
J. Olivares ◽  
C. Gómez-Aleixandre ◽  
J. M. Albella
Keyword(s):  

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-861-Pr3-867 ◽  
Author(s):  
S. M. Zemskova ◽  
J. A. Haynes ◽  
K. M. Cooley

1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).


1996 ◽  
Vol 444 ◽  
Author(s):  
H. Okumoto ◽  
M. Shimomura ◽  
N. Minami ◽  
Y. Tanabe

AbstractSilicon-based polymers with σconjugated electrons have specific properties; photoreactivity for microlithography and photoconductivity for hole transport materials. To explore the possibility of combining these two properties to develop photoresists with electronic transport capability, photoconductivity of polysilanes is investigated in connection with their photoinduced chemical modification. Increase in photocurrent is observed accompanying photoreaction of poly(dimethylsilane) vacuum deposited films. This increase is found to be greatly enhanced in oxygen atmosphere. Such changes of photocurrent can be explained by charge transfer to electron acceptors from Si dangling bonds postulated to be formed during photoreaction.


2005 ◽  
Vol 862 ◽  
Author(s):  
Scott J. Jones ◽  
Joachim Doehler ◽  
Tongyu Liu ◽  
David Tsu ◽  
Jeff Steele ◽  
...  

AbstractNew types of transparent conductive oxides with low indices of refraction have been developed for use in optical stacks for the amorphous silicon (a-Si) solar cell and other thin film applications. The alloys are ZnO based with Si and MgF added to reduce the index of the materials through the creation of SiO2 or MgF2, with n=1.3-1.4, or the addition of voids in the materials. Alloys with 12-14% Si or Mg have indices of refraction at λ=800nm between 1.6 and 1.7. These materials are presently being used in optical stacks to enhance light scattering by Al/multi-layer/ZnO back reflectors in a-Si based solar cells to increase light absorption in the semiconductor layers and increase open circuit currents and boost device efficiencies. In contrast to Ag/ZnO back reflectors which have long term stability issues due to electromigration of Ag, these Al based back reflectors should be stable and usable in manufactured PV products. In this manuscript, structural properties for the materials will be reported as well as the performance of solar cell devices made using these new types of materials.


2009 ◽  
Vol E92-C (5) ◽  
pp. 708-712
Author(s):  
Dong-Heon HA ◽  
Chi Ho HWANG ◽  
Yong Soo LEE ◽  
Hee Chul LEE

Sign in / Sign up

Export Citation Format

Share Document