Low temperature deposition of high open-circuit voltage (>1.0V) p–i–n type amorphous silicon solar cells

It is necessary to improve the open circuit voltage of amorphous silicon solar cells for its applications. In this paper, we discuss the effects of hydrogen plasma treatment on the P layer and the performance of the amorphous silicon solar cells. The result shows that the open circuit voltage increased by 0.0257V, the fill factor increased by 0.039 and the energy conversion efficiency increased by 9%. The highest VOCwe got was 0.99V. Treating P layer with hydrogen plasma has been demonstrated to result in materials with improved crystalline volume fraction which was very effective to increase the light absorption of the intrinsic layer. What is more, it could be easily integrated into the amorphous silicon solar cell mass production process.

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Bandtail Limits to Solar Conversion Efficiencies in Amorphous Silicon Solar Cells

MRS Proceedings ◽

10.1557/proc-762-a3.2 ◽

2003 ◽

Vol 762 ◽

Cited By ~ 6

Author(s):

K. Zhu ◽

J. Yang ◽

W. Wang ◽

E. A. Schiff ◽

J. Liang ◽

...

Keyword(s):

Solar Cells ◽

Temperature Dependence ◽

Amorphous Silicon ◽

Power Density ◽

Open Circuit Voltage ◽

Open Circuit ◽

Drift Mobility ◽

Silicon Solar Cells ◽

Solar Conversion ◽

Conversion Efficiencies

AbstractWe describe a model for a-Si:H based pin solar cells derived primarily from valence bandtail properties. We show how hole drift-mobility measurements and measurements of the temperature-dependence of the open-circuit voltage VOC can be used to estimate the parameters, and we present VOC(T) measurements. We compared the power density under solar illumination calculated with this model with published results for as-deposited a-Si:H solar cells. The agreement is within 4% for a range of thicknesses, suggesting that the power from as-deposited cells is close to the bandtail limit.

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High Open-Circuit Voltage and Its Low Temperature Coefficient in Crystalline Germanium Solar Cells Using a Heterojunction Structure with a Hydrogenated Amorphous Silicon Thin Layer

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.120204 ◽

2011 ◽

Vol 50 ◽

pp. 120204 ◽

Cited By ~ 3

Author(s):

Tetsuya Kaneko ◽

Michio Kondo

Keyword(s):

Solar Cells ◽

Low Temperature ◽

Thin Layer ◽

Amorphous Silicon ◽

Temperature Coefficient ◽

Open Circuit Voltage ◽

Hydrogenated Amorphous Silicon ◽

Open Circuit ◽

Heterojunction Structure ◽

Hydrogenated Amorphous

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Effects of Carbon Grading at the p/i Interface on the Open Circuit Voltage of p-i-n and n-i-p Amophous Silicon Solar Cells

MRS Proceedings ◽

10.1557/proc-95-545 ◽

1987 ◽

Vol 95 ◽

Cited By ~ 3

Author(s):

N. T. Tran ◽

F. R. Jeffrey ◽

D. J. Olsen

Keyword(s):

Solar Cells ◽

Electric Field ◽

Amorphous Silicon ◽

Buffer Layer ◽

Open Circuit Voltage ◽

Electron Tunneling ◽

Open Circuit ◽

Silicon Solar Cells

AbstractCarbon grading in the buffer layer at the p/i interface increases the open circuit voltage of both p-i-n and n-i-p amorphous silicon solar cells. We propose that carbon grading enlarges the electric field and reduces the electron tunneling at the p/i interface.

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