scholarly journals Low Temperature Deposition of Boron Doped P-type Si:H Window Layers for Amorphous Silicon Solar Cells

2021 ◽  
pp. ArticleID:210630
Author(s):  
Zhihua Hu ◽  
Keyword(s):  
Solar Cells ◽  
Low Temperature ◽  
Amorphous Silicon ◽  
Silicon Solar Cells ◽  
Boron Doped ◽  
Low Temperature Deposition ◽  
Temperature Deposition ◽  
P Type

Amorphous silicon solar cells with graded boron‐doped active layers

1983 ◽  
Vol 54 (11) ◽  
pp. 6705-6707 ◽  
Author(s):  
Porponth Sichanugrist ◽  
Masatoshi Kumada ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi ◽  
Koichiro Komori
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Silicon Solar Cells ◽  
Active Layers ◽  
Boron Doped

CdTe thin film solar cells prepared by a low-temperature deposition method

2009 ◽  
Vol 207 (3) ◽  
pp. 730-733 ◽  
Author(s):  
V. D. Novruzov ◽  
N. M. Fathi ◽  
O. Gorur ◽  
M. Tomakin ◽  
A. I. Bayramov ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Low Temperature ◽  
Thin Film Solar Cells ◽  
Cdte Thin Film ◽  
Deposition Method ◽  
Low Temperature Deposition ◽  
Temperature Deposition

Stability of P-I-N Amorphous Silicon Solar Cells with Boron-Doped and Undoped I-Layers

1985 ◽  
Vol 49 ◽  
Author(s):  
Anthony Catalano ◽  
Rajeewa R. Arya ◽  
Ralph C. Kerns
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Boron Doping ◽  
Poor Quality ◽  
Silicon Solar Cells ◽  
Device Performance ◽  
Layer Material ◽  
Boron Doped ◽  
Conversion Efficiencies ◽  
Initial Conversion

AbstractBoron-doping the i-layer in p-i-n amorphous silicon solar cells improves the device performance when the density of impurities in the undoped i-layer material is high (< 1020 cm-3). While this technique can boost the initial device efficiencies for poor quality i-layer material, our devices degrade faster than devices made with undoped, low impurity i-layer material. We have measured the degradation of photovoltaic parameters as a function of continuous AM1 exposure time for devices with and without B-doped i-layers. For single junction p-i-n solar cells with comparable initial conversion efficiencies (< 7%, area < 1cm2) we find that our devices containing i-layers deposited from gas mixtures containing 2–3 ppm diborane degrade faster than devices containing undoped i-layers. Similar effects are observed when two-junction stacked cells with B-doped i-layers are compared to two-junction stacked cells with undoped i-layers.

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