Uniaxially strained silicon by wafer bonding and layer transfer

Solid-State Electronics ◽

10.1016/j.sse.2007.01.018 ◽

2007 ◽

Vol 51 (2) ◽

pp. 226-230 ◽

Author(s):

C. Himcinschi ◽

I. Radu ◽

F. Muster ◽

R. Singh ◽

M. Reiche ◽

...

Keyword(s):

Wafer Bonding ◽

Strained Silicon ◽

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Comparison of SiGe Virtual Substrates for the Fabrication of Strained Silicon-on-Insulator (sSOI) Using Wafer Bonding and Layer Transfer

ECS Meeting Abstracts ◽

10.1149/ma2006-02/31/1436 ◽

2006 ◽

Keyword(s):

Wafer Bonding ◽

Silicon On Insulator ◽

Strained Silicon ◽

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Wafer Bonding and Layer Transfer Approach for Strained Silicon-On-Insulator (sSOI) Fabrication

ECS Meeting Abstracts ◽

10.1149/ma2005-01/11/484 ◽

2005 ◽

Keyword(s):

Wafer Bonding ◽

Silicon On Insulator ◽

Strained Silicon ◽

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Compressive uniaxially strained silicon on insulator by prestrained wafer bonding and layer transfer

Applied Physics Letters ◽

10.1063/1.2747182 ◽

2007 ◽

Vol 90 (23) ◽

pp. 231909 ◽

Author(s):

C. Himcinschi ◽

M. Reiche ◽

R. Scholz ◽

S. H. Christiansen ◽

U. Gösele

Keyword(s):

Wafer Bonding ◽

Silicon On Insulator ◽

Strained Silicon ◽

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High-density-plasma (HDP)-CVD oxide to thermal oxide wafer bonding for strained silicon layer transfer applications

Applied Surface Science ◽

10.1016/j.apsusc.2006.07.077 ◽

2007 ◽

Vol 253 (7) ◽

pp. 3595-3599 ◽

Author(s):

R. Singh ◽

I. Radu ◽

M. Reiche ◽

C. Himcinschi ◽

B. Kuck ◽

...

Keyword(s):

Wafer Bonding ◽

Silicon Layer ◽

High Density ◽

Strained Silicon ◽

Layer Transfer ◽

Thermal Oxide ◽

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Comparison of SiGe Virtual Substrates for the Fabrication of Strained Silicon-on-Insulator (sSOI) Using Wafer Bonding and Layer Transfer

ECS Transactions ◽

10.1149/1.2355829 ◽

2019 ◽

Vol 3 (7) ◽

pp. 317-324 ◽

Author(s):

Manfred Reiche ◽

Ionut Radu ◽

Cameliu Himcinschi ◽

Rajendra Singh ◽

Silke Christiansen ◽

...

Keyword(s):

Wafer Bonding ◽

Silicon On Insulator ◽

Strained Silicon ◽

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Porous Silicon Films for Thin Film Layer Transfer and Wafer Bonding Applications

ECS Meeting Abstracts ◽

10.1149/ma2010-02/27/1727 ◽

2010 ◽

Keyword(s):

Thin Film ◽

Porous Silicon ◽

Wafer Bonding ◽

Silicon Films ◽

Layer Transfer ◽

Thin Film Layer ◽

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Structural and electrical properties of metal-ferroelectric-silicon heterostructure fabricated by a direct wafer bonding and layer transfer process

Ferroelectrics ◽

10.1080/00150199908009113 ◽

1999 ◽

Vol 225 (1) ◽

pp. 75-82 ◽

Author(s):

M. Alexe ◽

St. Senz ◽

A. Pignqlet ◽

D. Hesse ◽

U. Gösele

Keyword(s):

Electrical Properties ◽

Transfer Process ◽

Wafer Bonding ◽

Layer Transfer ◽

Direct Wafer Bonding ◽

Structural And Electrical Properties

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Low Temperature Processing of Porous Silicon Films for Wafer Bonding-Based Thin-Film Layer Transfer Applications

Journal of The Electrochemical Society ◽

10.1149/1.3465616 ◽

2010 ◽

Vol 157 (10) ◽

pp. H909 ◽

Author(s):

M. B. Joshi ◽

S. J. Hu ◽

M. S. Goorsky

Keyword(s):

Thin Film ◽

Porous Silicon ◽

Low Temperature ◽

Wafer Bonding ◽

Silicon Films ◽

Layer Transfer ◽

Thin Film Layer ◽

Low Temperature Processing ◽

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Porous Silicon Films for Thin Film Layer Transfer Applications and Wafer Bonding

ECS Transactions ◽

10.1149/1.3483508 ◽

2019 ◽

Vol 33 (4) ◽

pp. 195-206 ◽

Author(s):

Monali Joshi ◽

Song Jun Hu ◽

Mark S. Goorsky

Keyword(s):

Thin Film ◽

Porous Silicon ◽

Wafer Bonding ◽

Silicon Films ◽

Layer Transfer ◽

Thin Film Layer ◽

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Highly Strained Silicon on Polymer Obtained By Temporary Polymer Wafer Bonding

ECS Meeting Abstracts ◽

10.1149/ma2020-02221618mtgabs ◽

2020 ◽

Vol MA2020-02 (22) ◽

pp. 1618-1618

Author(s):

Laurent Gaëtan Michaud ◽

Clément Castan ◽

Pierre Montméat ◽

Edy Azrak ◽

Nikita Nikitskiy ◽

...

Keyword(s):

Wafer Bonding ◽

Strained Silicon ◽

Highly Strained

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