Impact of strain on gate-induced floating body effect for partially depleted silicon-on-insulator p-type metal–oxide–semiconductor-field-effect-transistors

Silicon On Insulator ◽

Oxide Semiconductor ◽

Floating Body ◽

Body Effect ◽

Floating Body Effect ◽

P Type

A New Structure of Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor to Suppress the Floating Body Effect

Chinese Physics Letters ◽

10.1088/0256-307x/20/5/350 ◽

2003 ◽

Vol 20 (5) ◽

pp. 767-769 ◽

Cited By ~ 8

Author(s):

Zhu Ming ◽

Lin Qing ◽

Zhang Zheng-Xuan ◽

Lin Cheng-Lu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Floating Body ◽

Body Effect ◽

Floating Body Effect ◽

Effect Transistor

Hot Carrier Degradations of Dynamic Threshold Silicon on Insulator p-Type Metal–Oxide–Semiconductor Field Effect Transistors

10.1143/jjap.43.1300 ◽

2004 ◽

Vol 43 (4A) ◽

pp. 1300-1304

Author(s):

Tien-Sheng Chao ◽

Yao-Jen Lee ◽

Chun-Yang Huang ◽

Horng-Chih Lin ◽

Yiming Li ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Dynamic Threshold ◽

Hot Carrier ◽

P Type

Investigation of floating body effects in silicon‐on‐insulator metal‐oxide‐semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.349200 ◽

1991 ◽

Vol 70 (7) ◽

pp. 3912-3919 ◽

Cited By ~ 18

Author(s):

T. Ouisse ◽

G. Ghibaudo ◽

J. Brini ◽

S. Cristoloveanu ◽

G. Borel

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Floating Body ◽

Floating Body Effects

Mobility Degradation in (110)-Oriented Ultrathin-Body Double-Gate p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Silicon-on-Insulator Thickness of Less than 5 nm

10.1143/jjap.49.041302 ◽

2010 ◽

Vol 49 (4) ◽

pp. 041302 ◽

Cited By ~ 1

Author(s):

Ken Shimizu ◽

Toshiro Hiramoto

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

Mobility Degradation ◽

P Type

Suppression of Floating Body Effects by Controlling Potential Profile in the Lower Body Region of Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistors

10.1143/jjap.39.3271 ◽

2000 ◽

Vol 39 (Part 1, No. 6A) ◽

pp. 3271-3276

Author(s):

Yasuhiro Sato ◽

Toshiaki Tsuchiya

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Silicon On Insulator ◽

Potential Profile ◽

Oxide Semiconductor ◽

Floating Body ◽

Body Region ◽

Lower Body

Hole mobility enhancement by double-gate mode in ultrathin-body silicon-on-insulator p-type metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.3182792 ◽

2009 ◽

Vol 106 (2) ◽

pp. 024511 ◽

Cited By ~ 9

Author(s):

Shigeki Kobayashi ◽

Masumi Saitoh ◽

Ken Uchida

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Hole Mobility ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

P Type

Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Cost Effective ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

Self-consistent calculations of inversion-layer mobility in highly doped silicon-on-insulator metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1378329 ◽

2001 ◽

Vol 90 (2) ◽

pp. 866-870 ◽

Cited By ~ 6

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Inversion Layer ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Self Consistent ◽

Doped Silicon

Selective Growth of B- and C-Doped SiGe Layers in Unprocessed and Recessed Si Openings for p-type Metal-Oxide-Semiconductor Field-Effect Transistors Application

Journal of The Electrochemical Society ◽

10.1149/1.3363736 ◽

2010 ◽

Vol 157 (6) ◽

pp. H633 ◽

Cited By ~ 13

Author(s):

M. Kolahdouz ◽

P. Tabib Zadeh Adibi ◽

A. Afshar Farniya ◽

S. Shayestehaminzadeh ◽

E. Trybom ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Selective Growth ◽

Oxide Semiconductor ◽

P Type

Comparisons of Radio-Frequency Performance of Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect-Transistors

10.1143/jjap.46.7635 ◽

2007 ◽

Vol 46 (12) ◽

pp. 7635-7638 ◽

Cited By ~ 2

Author(s):

Yasushi Hiraoka ◽

Satoshi Matsumoto

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Field Effect ◽

Silicon On Insulator ◽

Oxide Semiconductor