Definitions and methods of calculation of the temperature-programmed retention index, ITP

1987 ◽  
Vol 390 (2) ◽  
pp. 261-267 ◽  
Author(s):  
Tiansong Wang ◽  
Yiliang Sun
Keyword(s):  
Retention Index ◽  
Methods Of Calculation ◽  
Temperature Programmed

Definitions and methods of calculation of the temperature-programmed retention index, ITP

1987 ◽  
Vol 390 (2) ◽  
pp. 275-283 ◽  
Author(s):  
Tiangsong Wang ◽  
Bianxiao Zhong ◽  
Minbo Chen ◽  
Yiliang Sun
Keyword(s):  
Retention Index ◽  
Methods Of Calculation ◽  
Temperature Programmed

scholarly journals Gas chromatographic retention indices for N-substituted amino s-triazines on capillary columns - Part IV: Influence of column polarity on retention index

2003 ◽  
Vol 68 (7) ◽  
pp. 557-564 ◽  
Author(s):  
Dusan Mijin ◽  
Dusan Antonovic ◽  
Gordana Boncic-Caricic ◽  
Bratislav Jovanovic ◽  
Olga Rajkovic
Keyword(s):  
Linear Regression ◽  
Retention Index ◽  
Retention Factor ◽  
Capillary Columns ◽  
Retention Indices ◽  
Chromatographic Retention ◽  
Analyte Molecule ◽  
Alkyl Groups ◽  
Gas Chromatographic Retention Indices ◽  
Temperature Programmed

The retention index increment for the addition of a methylene group to the alkyl group of an analyte molecule is shown to be lower than 100 i.u. for N-substituted amino s-triazines. In temperature programmed gas chromatography, a linearly interpolated retention index I, determined from the linear regression equation, I = AZ + (GRF)z, with the number of atoms (Z) in the molecule as variable, was used to describe the retention of 25 N-substituted amino s-triazines, on DB-1, DB-5 and DB-WAX capillary columns divided into five series according to the similarity of the alkyl groups in the particular series. In the above equation, A is the linear regression coefficient or the retention index increment per atom addition, Z the number of C,N and Cl atoms in the molecule, and (GRF)z the group retention factor or functionality constant for functional groups in the molecule, based on the number Z. It is possible to estimate the retention indices of an unknown member of the series from the Z, A and (GRF) values.

Retention index in temperature-programmed gas chromatography

1999 ◽  
Vol 842 (1-2) ◽  
pp. 29-49 ◽  
Author(s):  
F.R. Gonzalez ◽  
A.M. Nardillo
Keyword(s):  
Gas Chromatography ◽  
Retention Index ◽  
Temperature Programmed

Interactions of Ge Atoms with High- ê Oxide Dielectric Surfaces

2005 ◽  
Vol 879 ◽  
Author(s):  
Scott K. Stanley ◽  
John G. Ekerdt
Keyword(s):  
Oxide Layer ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Temperature Programmed Desorption ◽  
Tungsten Filament ◽  
X Ray ◽  
Dielectric Surfaces ◽  
Temperature Programmed ◽  
The Stability ◽  
Ge Nanocrystals

AbstractGe is deposited on HfO2 surfaces by chemical vapor deposition (CVD) with GeH4. 0.7-1.0 ML GeHx (x = 0-3) is deposited by thermally cracking GeH4 on a hot tungsten filament. Ge oxidation and bonding are studied at 300-1000 K with X-ray photoelectron spectroscopy (XPS). Ge, GeH, GeO, and GeO2 desorption are measured with temperature programmed desorption (TPD) at 400-1000 K. Ge initially reacts with the dielectric forming an oxide layer followed by Ge deposition and formation of nanocrystals in CVD at 870 K. 0.7-1.0 ML GeHx deposited by cracking rapidly forms a contacting oxide layer on HfO2 that is stable from 300-800 K. Ge is fully removed from the HfO2 surface after annealing to 1000 K. These results help explain the stability of Ge nanocrystals in contact with HfO2.

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