Selective area etching of III–V semiconductors using TDMAAs and TDMASb in metalorganic molecular beam epitaxy chamber

1997 ◽  
Vol 175-176 ◽  
pp. 1236-1241 ◽  
Author(s):  
K. Yamamoto ◽  
H. Asahi ◽  
T. Hayashi ◽  
K. Hidaka ◽  
S. Gonda
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Area ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Molecular Beam Epitaxy Chamber

In-Situ Selective Area Etching of GaAs in Metalorganic Molecular Beam Epitaxy Chamber using Trisdimethylaminoarsenic

1996 ◽  
Vol 35 (Part 1, No. 7) ◽  
pp. 3814-3818 ◽  
Author(s):  
Toshihiko Hayashi ◽  
Hajime Asahi ◽  
Kazuhiko Yamamoto ◽  
Ken-ichi Hidaka ◽  
Shun-ichi Gonda
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Area ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Molecular Beam Epitaxy Chamber

Selective Area Growth of Cubic GaN on 3C-SiC (001) by Metalorganic Molecular Beam Epitaxy

2000 ◽  
Vol 39 (Part 2, No. 11A) ◽  
pp. L1081-L1083 ◽  
Author(s):  
Jun Suda ◽  
Tatsuro Kurobe ◽  
Shigeru Nakamura ◽  
Hiroyuki Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Cubic Gan ◽  
Metalorganic Molecular Beam Epitaxy

Selective area epitaxy of GaSb and AlGaSb by metalorganic molecular beam epitaxy

1994 ◽  
Vol 136 (1-4) ◽  
pp. 250-255 ◽  
Author(s):  
X.F. Liu ◽  
H. Asahi ◽  
Y. Okuno ◽  
D. Marx ◽  
K. Inoue ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Area Epitaxy ◽  
Selective Area ◽  
Metalorganic Molecular Beam Epitaxy
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