High-field and low-field transport in amorphous semiconductors

1991 ◽  
Vol 137-138 ◽  
pp. 415-418 ◽  
Author(s):  
B. Cleve ◽  
B. Movaghar ◽  
R. Schumacher ◽  
P. Thomas
Author(s):  
Alexey S. Kiryutin ◽  
Ivan V. Zhukov ◽  
Fabien Ferrage ◽  
G Bodenhausen ◽  
Alexandra V. Yurkovskaya ◽  
...  

A novel method dubbed ZULF-TOCSY results from the combination of Zero and Ultra-Low Field (ZULF) with high-field, high-resolution NMR, leading to a generalization of the concept of total correlation spectroscopy...


2003 ◽  
Vol 181 (5) ◽  
pp. 1211-1215 ◽  
Author(s):  
Thomas Magee ◽  
Marc Shapiro ◽  
David Williams

2021 ◽  
Vol 2103 (1) ◽  
pp. 012199
Author(s):  
G S Patrin ◽  
M M Mataev ◽  
K Zh Seitbekova ◽  
Ya G Shiyan ◽  
V G Plekhanov

Abstract The magnetostatic and magnetic resonance properties of the Y0.5Sr0.5Cr0.5Mn0.5O3 polycrystalline system have been experimentally studied. The intracrystalline ferromagnetic interaction turned out to be prevalent while the intercrystalline interaction appears to have antiferromagnetic character. We found that two absorption lines are observed in the spectrum in the magnetic ordering region at T < 80 K. The high-field line corresponds to the interacting parts of polycrystal related to the disordered shells and the low-field peak is system of ferromagnetic particles.


2008 ◽  
Vol 78 (3) ◽  
Author(s):  
Kirstin Wohlfart ◽  
Frank Filsinger ◽  
Fabian Grätz ◽  
Jochen Küpper ◽  
Gerard Meijer

Author(s):  
H.R. Jensen ◽  
J.B. Thomsen ◽  
R.L. Christiansen ◽  
A. Bertelsen ◽  
U. Bernchou ◽  
...  

1985 ◽  
Vol 40 (10) ◽  
pp. 1301-1305 ◽  
Author(s):  
Franz Fehér ◽  
Michael Krancher

Diluted solutions of potassium disilanyl, 2-potassium trisilanyl and 2-potassium isotetrasilanyl in m onoglym e have been prepared from potassium silyl and di- or trisilane under suitable reaction conditions. The purity of the silanyls varies between 95 and 99%. Their stability increases from potassium di- to 2-potassium isotetrasilanyl. The 29Si NMR spectra exhibit a strong high field shift for the metal substituted silicon atoms and a m oderate low field shift for the other silicon atoms compared with the signals of the corresponding silanes.


1977 ◽  
Vol 55 (19) ◽  
pp. 1648-1653 ◽  
Author(s):  
Shigetoshi Katsura ◽  
Nobuyoshi Yazaki ◽  
Mitsugu Takaishi

The high temperature – low field expansions of the Ising model are derived from the low temperature – high field expansions and the coefficients for several lattices are presented.


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