Change of the electron effective mass in extremely heavily doped n-type Si obtained by ion implantation and laser annealing

1983 ◽  
Vol 14 (3) ◽  
pp. 91
Keyword(s):  
Ion Implantation ◽  
Effective Mass ◽  
Laser Annealing ◽  
Electron Effective Mass ◽  
Heavily Doped

Heavily doped GaAs:Se. I. Photoluminescence determination of the electron effective mass

1990 ◽  
Vol 68 (5) ◽  
pp. 2367-2375 ◽  
Author(s):  
D. M. Szmyd ◽  
P. Porro ◽  
A. Majerfeld ◽  
S. Lagomarsino
Keyword(s):  
Effective Mass ◽  
Electron Effective Mass ◽  
Heavily Doped

The electron effective mass in heavily doped GaAs

1979 ◽  
Vol 12 (12) ◽  
pp. 2289-2293 ◽  
Author(s):  
A Raymond ◽  
J L Robert ◽  
C Bernard
Keyword(s):  
Effective Mass ◽  
Electron Effective Mass ◽  
Heavily Doped

Germanium Extremely Heavily Doped by Ion-Implantation and Laser Annealing: A Photoluminescence Study

1983 ◽  
Vol 23 ◽  
Author(s):  
J. Wagner ◽  
G. Contreras ◽  
A. Compaan ◽  
M. Cardona ◽  
A. Axmann
Keyword(s):  
Ion Implantation ◽  
Diagnostic Tool ◽  
Laser Annealing ◽  
Optical Band Gap ◽  
Pulsed Laser ◽  
Solubility Limit ◽  
Equilibrium Solubility ◽  
Photoluminescence Study ◽  
Pulsed Laser Annealing ◽  
Heavily Doped

ABSTRACTIt has been shown previously that dopant concentrations far above the equilibrium solubility limit can be obtained in semiconductors by pulsed laser annealing of heavily ion implanted material. We exploit this fact to study the photoluminescence of germanium with dopant concentrations up to 1021 cm−3. From this study we obtain information on the filling of higher lying band minima and the shift of the optical band gap as a function of carrier concentration over a much wider range than accessible with bulk doped material. In addition it is shown that photoluminescence provides a diagnostic tool to characterize implanted layers.

scholarly journals Electron effective mass and mobility in heavily doped n-GaAsN probed by Raman scattering

2008 ◽  
Vol 103 (10) ◽  
pp. 103528 ◽  
Author(s):  
J. Ibáñez ◽  
R. Cuscó ◽  
E. Alarcón-Lladó ◽  
L. Artús ◽  
A. Patanè ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Effective Mass ◽  
Electron Effective Mass ◽  
Heavily Doped

scholarly journals The Al Doping Effect on Epitaxial (In,Mn)As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting

Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4138
Author(s):  
Ye Yuan ◽  
Yufang Xie ◽  
Ning Yuan ◽  
Mao Wang ◽  
René Heller ◽  
...  
Keyword(s):  
Curie Temperature ◽  
Ion Implantation ◽  
Diluted Magnetic Semiconductors ◽  
Laser Annealing ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Pulsed Laser ◽  
Laser Melting ◽  
Co Doping ◽  
Diluted Magnetic

One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibility to modulate their electronic and ferromagnetic properties, coupled by itinerant holes through various means. A prominent example is the modification of Curie temperature and magnetic anisotropy by ion implantation and pulsed laser melting in III–V diluted magnetic semiconductors. In this study, to the best of our knowledge, we performed, for the first time, the co-doping of (In,Mn)As diluted magnetic semiconductors by Al by co-implantation subsequently combined with a pulsed laser annealing technique. Additionally, the structural and magnetic properties were systematically investigated by gradually raising the Al implantation fluence. Unexpectedly, under a well-preserved epitaxial structure, all samples presented weaken Curie temperature, magnetization, as well as uniaxial magnetic anisotropies when more aluminum was involved. Such a phenomenon is probably due to enhanced carrier localization introduced by Al or the suppression of substitutional Mn atoms.

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