Electron effective mass and mobility in heavily doped n-GaAsN probed by Raman scattering
Keyword(s):
1979 ◽
Vol 12
(12)
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pp. 2289-2293
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Keyword(s):
Keyword(s):
1981 ◽
Vol 37
(7)
◽
pp. 605-608
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Keyword(s):
1990 ◽
Vol 5
(11)
◽
pp. 1136-1137
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