Characterization and dielectric properties of (SrTiO3/BaTiO3)n multilayer thin films deposited on Pt/Ti/SiO2/Si substrates by double rf magnetron sputtering

2003 ◽  
Vol 125 (11-12) ◽  
pp. 633-636 ◽  
Author(s):  
Chi-Shiung Hsi ◽  
Fu-Yuan Shiao ◽  
Nan-Chung Wu ◽  
Moo-Chin Wang
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Multilayer Thin Films ◽  
Si Substrates

The Influence of O2/Ar on the Dielectric Properties of Bismuth Zinc Niobate Titanium Thin Films Prepared by RF Magnetron Sputtering

2012 ◽  
Vol 252 ◽  
pp. 202-206
Author(s):  
Xiao Hua Sun ◽  
Zhi Meng Luo ◽  
Shuang Hou ◽  
Cai Hua Huang ◽  
Jun Zou
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Si Substrates ◽  
Low Dielectric ◽  
Metal Insulator Metal ◽  
Titanium Thin Films

BZNT (Bi1.5Zn0.5Nb0.5Ti1.5O7) thin films were prepared on Pt/Ti/SiO2/Si substrates by radio frequency (RF) magnetron sputtering in different O2/Ar ranging from 4:16 to 7:13. The structure and surface morphology of BZNT thin films were investigated by x-ray diffraction (XRD) and atom force microscopy (AFM). The analysis of component in BZNT films were carried out by x-ray photoelectron spectroscopy (XPS). The dielectric measurements were conducted on metal-insulator-metal capacitors at the frequency from 100 Hz to 1M Hz. It’s found that the O2/Ar ratios significantly influence the elements content in BZNT thin films and the morphology and dielectric properties of BZNT thin films. At 1M Hz, the dielectric constant of BZNT thin films deposited at O2/Ar ranging from 4:16 to 7:13 is 212, 187, 171, 196, respectively. The BZNT thin film prepared at O2/Ar = 6:14 shows the highest figure of merit for its very low dielectric loss of 0.0024.

Dielectric Properties of Nanocrystalline Barium Titanate Thin Films Deposited by RF Magnetron Sputtering

2003 ◽  
Vol 42 (Part 1, No. 2A) ◽  
pp. 544-548 ◽  
Author(s):  
Chi-Shiung Hsi ◽  
Fu-Yuan Hsiao ◽  
Nan-Chung Wu ◽  
Moo-Chin Wang
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Barium Titanate ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering

Effects of Sputter-Deposited LaNiO3 Electrode on the Deposition and Properties of Ferroelectric Thin Films

1996 ◽  
Vol 433 ◽  
Author(s):  
T. B. Wu ◽  
J. M. Wu ◽  
C. M. Wu ◽  
M. J. Shyu ◽  
M. S. Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Processing Condition ◽  
Fatigue Property ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Sputter Deposited

AbstractHighly (100)-textured thin film of metallic LaNiO3 (LNO) was grown on the Pt/Ti/SiO2/Si substrates by rf magnetron sputtering at ˜300°C, which was used as a bottom electrode to prepare highly (100)-textured ferroelectric films. Examples on the deposition of PbTiO3, (Pbl−xLax)TiO3, Pb(Zr0.53Ti0.47)O3, Pb[(Mg1/3Nb2/3)1−xTix]O3, and (Ba1−xSrx)TiO3 thin films by rf magnetron sputtering or sol-gel method are shown. A reduction of temperature for perovskite phase formation can be achieved, especially for those difficult to crystallize. The surface roughness of the ferroelectric films is also improved as compared to that of films deposited on conventional Pt electrode. Although the electrical properties of the ferroelectric films are affected by the out-diffusion of LNO when a higher temperature was used in the preparation of the films, under an appropriate processing condition, the highly (100)-textured films can have satisfactory electrical characteristics for application. Moreover, the polarization-fatigue property can be also improved by the use of LNO electrode.

Ferroelectric Properties and Microstructures of Tb4O7-Doped Bi4Ti3O12 Thin Films

2010 ◽  
Vol 105-106 ◽  
pp. 259-262 ◽  
Author(s):  
X.A. Mei ◽  
Min Chen ◽  
A.H. Cai ◽  
K.L. Su ◽  
Chong Qing Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Si Substrates ◽  
Remarkable Improvement

Tb4O7-doped bismuth titanate (BixTbyTi3O12 BTT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the microstructures and ferroelectric properties of the films were investigated. Microstructure studies indicate that all of BTT films with well-developed rod-like grains consist of single phase of a bismuth-layered structure without preferred orientation. The experimental results indicate that Tb doping into Bi4Ti3O12 results in a remarkable improvement in ferroelectric properties. The remanent polarization (Pr) and coercive field (Ec) of the BTT film with y=0.6 were 22 μC/cm2 and 85 kV/cm, respectively.

Synthesis and Characterization of Ce-Doped BZT Thin Films Deposited by a RF Magnetron Sputtering Method

2006 ◽  
Vol 321-323 ◽  
pp. 1336-1339
Author(s):  
Won Seok Choi ◽  
Young Park ◽  
Jin Hyo Boo ◽  
Junsin Yi ◽  
Byung You Hong
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Film Deposition ◽  
Si Substrates ◽  
Structural And Electrical Properties ◽  
Ceramic Capacitor ◽  
Diffraction Patterns ◽  
Lower Temperature

We investigated the structural and electrical properties of the 0.5% Ce-doped Ba(ZrxTi1-x)O3 (BZT) thin films with a mole fraction of x=0.2 and a thickness of 150 nm for the MLCC (Multilayer Ceramic Capacitor) application. Ce-doped BZT films were prepared on Pt/Ti/SiO2/Si substrates by a RF magnetron sputtering system as a function of Ar/O2 ratio and substrate temperature. X-ray diffraction patterns were recorded for the samples deposited with three different substrate temperatures. The thickness and the surface roughness of the films deposited with different Ar/O2 ratios were measured. The oxygen gas, which was introduced during the film deposition, had an influence on the growth rate and the roughness of the film. The surface roughness and dielectric constant of the Ce-doped BZT film varied with Ar to O2 ratios (5:1, 2:1, and 1:1) from 1.21 nm to 2.33 nm and 84 to 149, respectively. The Ce-doped BZT film deposited at lower temperature has small leakage current and higher breakdown voltage.

Dielectric properties of La/Mn codoped Ba0.63Sr0.37TiO3 thin films prepared by RF magnetron sputtering

2014 ◽  
Vol 40 (8) ◽  
pp. 12573-12577 ◽  
Author(s):  
Lirong Song ◽  
Ying Chen ◽  
Genshui Wang ◽  
Lihui Yang ◽  
Tao Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering
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