Magnetic behavior of oxidized iron thin films prepared by sputtering at very low temperatures

2001 ◽  
Vol 482-485 ◽  
pp. 1095-1100 ◽  
Author(s):  
A. Muñoz-Martı́n ◽  
C. Prieto ◽  
C. Ocal ◽  
J.L. Martı́nez ◽  
J. Colino
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Magnetic Behavior ◽  
Oxidized Iron

Core-shell nanocrystalline structures in oxidized iron thin films prepared by sputtering at very low temperatures

2007 ◽  
Vol 101 (11) ◽  
pp. 113914 ◽  
Author(s):  
F. Jiménez-Villacorta ◽  
Y. Huttel ◽  
A. Muñoz-Martín ◽  
C. Ballesteros ◽  
E. Román ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Core Shell ◽  
Oxidized Iron ◽  
Nanocrystalline Structures

Magnetic properties of oxidized iron thin films grown by sputtering at very low temperatures

2006 ◽  
Vol 26 (5-7) ◽  
pp. 1141-1145 ◽  
Author(s):  
F. Jiménez-Villacorta ◽  
A. Muñoz-Martín ◽  
R. Ramírez ◽  
C. Prieto
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Low Temperatures ◽  
Oxidized Iron

Anomalous magnetic behavior of iron thin films prepared by DC sputtering at very low temperatures

2000 ◽  
Vol 43 (10) ◽  
pp. 919-923 ◽  
Author(s):  
A Muñoz-Martı́n ◽  
C Prieto ◽  
C Ocal ◽  
J.L Martı́nez
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Magnetic Behavior ◽  
Dc Sputtering

ANOMALOUS MAGNETIZATION PROCESSES AT LOW TEMPERATURES IN COMPOSITIONALLY MODULATED Co/Mn THIN FILMS

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-1753-C8-1754
Author(s):  
H. Sakakima ◽  
M. Tessier ◽  
R. Krishnan ◽  
E. Hirota
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Magnetization Processes

scholarly journals Structural defects in ZnO thin films grown by atomic layer deposition at low temperatures

2021 ◽  
Vol 27 (S1) ◽  
pp. 2660-2662
Author(s):  
David Elam ◽  
Eduardo Ortega ◽  
Andrey Chabanov ◽  
Arturo Ponce
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Low Temperatures ◽  
Atomic Layer ◽  
Structural Defects ◽  
Zno Thin Films ◽  
Layer Deposition

Hydrothermal synthesis of heteroepitaxial Pb(ZrxTi1−x)O3 thin films at 90–150 °C

1997 ◽  
Vol 12 (5) ◽  
pp. 1176-1178 ◽  
Author(s):  
A. T. Chien ◽  
J. S. Speck ◽  
F. F. Lange
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
High Dielectric Constant ◽  
Ambient Pressure ◽  
Random Access ◽  
Random Access Memory ◽  
Molar Ratio ◽  
Access Memory ◽  
Eds Analysis ◽  
High Dielectric

Pb(ZrxTi1−x)O3 and PbZrO3 heteroepitaxial thin films were produced in an aqueous solution (10 M KOH) at ambient pressure and low temperatures (90–150 °C) on (001) SrTiO3 and LaAlO3 single crystal substrates. Growth of the Pb(ZrxTi1−x)O3 and PbZrO3 thin films initiates by the formation of {100} faceted islands. Energy dispersive spectroscopy (EDS) analysis of the Pb(ZrxTi1−x)O3 thin film shows that the Zr: Ti ratio is 45: 56, nearly identical to the molar ratio of the precursors. This route might provide a viable low temperature alternative for the formation of high dielectric constant thin films for applications such as dynamic random access memory (DRAM).

Acclimating the magnetic behavior of highly (117) oriented Bi4Ti 3-xMnxO12 thin films prepared sol-gel spin coating method

2020 ◽  
Author(s):  
A. Amali Roselin ◽  
N. Anandhan ◽  
I. Joseph Paneer Doss ◽  
G. Gopu ◽  
K. P. Ganesan ◽  
...  
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Sol Gel ◽  
Magnetic Behavior ◽  
Spin Coating Method ◽  
Coating Method
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