Growth and characterization of 3C-SiC films on Si substrates by reactive magnetron sputtering; effects of CH 4 partial pressure on the crystalline quality, structure and stoichiometry
1995 ◽
Vol 261
(1-2)
◽
pp. 317-321
◽
1996 ◽
Vol 287
(1-2)
◽
pp. 252-257
◽
2019 ◽
Vol 37
(2)
◽
pp. 021203
◽
2008 ◽
Vol 39
(11)
◽
pp. 1329-1330
◽
2016 ◽
Vol 26
(4)
◽
pp. 889-894
◽
2011 ◽
Vol 13
(2)
◽
pp. 314-320
◽
1997 ◽
Vol 90
(1-2)
◽
pp. 64-70
◽
Keyword(s):
2002 ◽
Vol 158-159
◽
pp. 685-689
◽