Growth and characterization of 3C-SiC films on Si substrates by reactive magnetron sputtering; effects of CH 4 partial pressure on the crystalline quality, structure and stoichiometry

1995 ◽  
Vol 261 (1-2) ◽  
pp. 317-321 ◽  
Author(s):  
Q. Wahab ◽  
L. Hultman ◽  
I.P. Ivanov ◽  
M. Willander ◽  
J.-E. Sundgren
2011 ◽  
Vol 13 (2) ◽  
pp. 314-320 ◽  
Author(s):  
A. Mallikarjuna Reddy ◽  
A. Sivasankar Reddy ◽  
Kee-Sun Lee ◽  
P. Sreedhara Reddy

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