titanium nitride
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Author(s):  
Lance Hubbard ◽  
Erin Fuller ◽  
Jarrod Allred ◽  
Gary Sevigny ◽  
Libor Kovarik ◽  
...  

2022 ◽  
Vol 275 ◽  
pp. 125290
Author(s):  
Santanu Podder ◽  
Jyotisman Bora ◽  
Samir Thakur ◽  
Deepshikha Gogoi ◽  
Bablu Basumatary ◽  
...  

Author(s):  
Yanan Lv ◽  
Dong Chen

The effects of parameters on nanoscale titanium nitride during the formation process in ferrite were studied via the molecular dynamics (MD) simulation. The formation of titanium nitride was executed by employing a dislocation-motivated formation model in which the atomic diffusion has a significant contribution. The roles of N/Ti atom ratio, temperature and matrix defect were identified and the according nitride formation property was analyzed.


Author(s):  
Lingxue Diao ◽  
Lingcheng Zheng ◽  
Rui Zhang ◽  
Feifei Chen ◽  
Yan Li ◽  
...  

Coatings ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1543
Author(s):  
Jia Lou ◽  
Zonglong Gao ◽  
Jie Zhang ◽  
Hao He ◽  
Xinming Wang

In this study, the corrosion resistance of titanium nitride (TiN), nitrogen titanium carbide (TiCN) and titanium-diamond-like carbon (Ti-DLC) films deposited on 316L stainless steel (SS) were compared via differences in the surface and section-cross morphologies, open circuit potential tests, electrochemical impedance spectroscopy and potentiometric tests. The corrosion resistance of the TiCN and Ti-DLC films significantly improved because of the titanium carbide (TiC) crystals that obstruct the corrosive species penetrating the as-deposited film in the electrolyte atmosphere. TiN exhibited the lowest corrosion resistance because of its low thickness and high volume of defects. The Ti-DLC film showed the lowest corrosion current density (approximately 4.577 μA/cm2) and thickness reduction (approximately 0.12 μm) in different electrolytes, particularly those with high Cl− and H+ concentrations, proving to be the most suitable corrosion protection material for 316L SS substrates.


2021 ◽  
Vol 130 (22) ◽  
pp. 225109
Author(s):  
Raymond Mencia ◽  
Yen-Hsiang Lin ◽  
Vladimir Manucharyan

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