High-density microwave plasma for high-rate and low-temperature deposition of silicon thin film

Vacuum ◽  
2000 ◽  
Vol 59 (1) ◽  
pp. 266-276 ◽  
Author(s):  
Y Sakuma ◽  
L Haiping ◽  
H Ueyama ◽  
H Shirai
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Microwave Plasma ◽  
High Density ◽  
High Rate ◽  
Silicon Thin Film ◽  
Low Temperature Deposition ◽  
Temperature Deposition

Technique for High-Rate, Low-Temperature Deposition of TiO2Photocatalytic Thin Film Using Radical-Assisted Sputtering

2011 ◽  
Vol 50 (1R) ◽  
pp. 010204 ◽  
Author(s):  
Daisuke Noguchi ◽  
Tomohiro Eto ◽  
Kazuya Kodama ◽  
Yukie Higashimaru ◽  
Shoji Fukudome ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
High Rate ◽  
Low Temperature Deposition ◽  
Temperature Deposition

Microcrystalline Silicon Thin-Film Solar Cells Prepared at Low Temperature

2001 ◽  
Vol 664 ◽  
Author(s):  
Y. Nasuno ◽  
M. Kondo ◽  
A. Matsuda
Keyword(s):  
Solar Cells ◽  
Low Temperature ◽  
High Efficiency ◽  
Short Circuit ◽  
High Rate ◽  
Rf Plasma ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film ◽  
Low Temperature Deposition ◽  
Temperature Deposition

ABSTRACTHydrogenated microcrystalline silicon (µc-Si:H) p-i-n solar cells have been prepared using a conventional RF plasma-enhanced chemical vapor deposition (PECVD) method at a low process temperature of 140 °C. The low temperature deposition of µc-Si:H has been found to be effective to suppress the formation of oxygen-related donors that cause a reduction in open circuit voltage (Voc) due to shunt leakage. We demonstrate the improvement of Voc by lowering the deposition temperature down to 140, while suppressing the reduction in high short circuit current density (Jsc) and fill factor (FF). A high efficiency of 8.9% was obtained using an Aasahi-U substrate. Furthermore, by optimizing textured structures on ZnO transparent conductive oxide (TCO) substrates, an efficiency of 9.4% (Voc=0.526V, Jsc=25.3mA/cm2, FF=0.710) was obtained. In addition, relatively high efficiency of 8.1% was achieved using VHF (60MHz) plasma at a deposition rate of 12 Å/s. Thus, this low temperature deposition technique for µc-Si:H is promising for both high efficiency and high rate deposition of µc-Si:H solar cells.

Technique for High-Rate, Low-Temperature Deposition of TiO2Photocatalytic Thin Film Using Radical-Assisted Sputtering

2011 ◽  
Vol 50 ◽  
pp. 010204 ◽  
Author(s):  
Daisuke Noguchi ◽  
Tomohiro Eto ◽  
Kazuya Kodama ◽  
Yukie Higashimaru ◽  
Shoji Fukudome ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
High Rate ◽  
Low Temperature Deposition ◽  
Temperature Deposition

Low-Temperature Deposition of Microcrystalline Silicon by Microwave Plasma-Enhanced Sputtering

1999 ◽  
Vol 67-68 ◽  
pp. 119-124
Author(s):  
P. Müller ◽  
W.M. Holber ◽  
W. Henrion ◽  
E. Nebauer ◽  
Viktor Schlosser ◽  
...  
Keyword(s):  
Low Temperature ◽  
Microwave Plasma ◽  
Microcrystalline Silicon ◽  
Low Temperature Deposition ◽  
Temperature Deposition

CdTe thin film solar cells prepared by a low-temperature deposition method

2009 ◽  
Vol 207 (3) ◽  
pp. 730-733 ◽  
Author(s):  
V. D. Novruzov ◽  
N. M. Fathi ◽  
O. Gorur ◽  
M. Tomakin ◽  
A. I. Bayramov ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Low Temperature ◽  
Thin Film Solar Cells ◽  
Cdte Thin Film ◽  
Deposition Method ◽  
Low Temperature Deposition ◽  
Temperature Deposition
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