Two approaches to the integration of ordered Ge(Si) self-assembled quantum dots (QDs) into two-dimensional photonic crystals (PhC) are considered in the paper. The first approach involves the synthesis on the structured silicon surface of the ordered Ge(Si) QD array, on which PhC is then formed. In the second approach, the PhC itself serves as the template for the ordered QD growth. It is shown that varying the diameter of PhC holes in the framework of the second approach, two growth modes of QDs can be realized, when they are formed inside or outside the PhC holes. For structures with ordered QDs built into PhC, an increase in the intensity of the photoluminescence signal was detected at room temperature in the spectral range of 0.9-1.2 eV, which is associated with the interaction of the emission with the radiation modes of PhC.
Kondo-excitons and Auger processes in self-assembled quantum dots