scholarly journals Carbon nitride thin films prepared by a capacitively coupled RF plasma jet

Author(s):  
G. Dinescu ◽  
E. Aldea ◽  
P. Boieriu ◽  
G. Musa ◽  
A. Andrei ◽  
...  
1999 ◽  
Vol 198-199 ◽  
pp. 1028-1031 ◽  
Author(s):  
Y.K Yap ◽  
Y Mori ◽  
S Kida ◽  
T Aoyama ◽  
T Sasaki

2003 ◽  
Vol 174-175 ◽  
pp. 632-637 ◽  
Author(s):  
Z. Hubička ◽  
M. Čada ◽  
I. Jakubec ◽  
J. Bludská ◽  
Z. Málková ◽  
...  
Keyword(s):  

1999 ◽  
Vol 116-119 ◽  
pp. 321-326 ◽  
Author(s):  
L Soukup ◽  
M Šı〔cha ◽  
F Fendrych ◽  
L Jastrabı〔k ◽  
Z Hubička ◽  
...  

2009 ◽  
Vol 609 ◽  
pp. 105-109
Author(s):  
J. Olejníček ◽  
Zdenek Hubička ◽  
M. Čada ◽  
P. Virostko ◽  
Štepan Kment ◽  
...  

Pulse modulated double hollow cathode RF plasma jet system with two separate independent nozzles made of BaTiO3 (BTO) and SrTiO3 (STO) was used for deposition of BSTO thin films on Si and on multi-layer Si/SiO2/TiO2/Pt substrates. Dielectric properties of BSTO layers strongly depend on ratio composition expressed by parameter x = Ba/(Ba+Sr) and on accuracy in presence of other elements. Space resolved optical emission spectroscopy (OES) was used mainly for monitoring of concentration of particles sputtered from the hollow cathode and for feedback correction of power supplied in both nozzles because applied power was responsible for sputtering speed of Ba and Sr particles. Main attention was focused on relation between ratio of spectral intensity of Ba, Ba+, Sr and Sr+ lines close to substrate and ratio of Ba and Sr concentration in the deposited film. 2D map of emission lines intensity distribution for Ba, Ba+, Sr, Sr+, Ti, Ar, and Ar+ for double hollow cathode plasma jet system with BTO and STO nozzles was created. OES was also used for observing of excess of Ti particles in final layer with negative effect on layer properties and for measurement of rotational temperature of OH radicals. Preliminary results of all these optical measurements are published in this paper. Deposited thin films were analyzed by X-ray diffraction, which confirmed presence of BSTO and STO perovskite phase in the films, by atomic force microscopy (AFM), by electron microprobe and by micro-Raman scattering measurement.


2001 ◽  
Vol 672 ◽  
Author(s):  
F. Antoniella ◽  
L. Valentini ◽  
A. Continenza ◽  
L. Lozzi ◽  
S. Santucci

ABSTRACTThe electronic structure of amorphous carbon nitride (a-C:H:N) thin films prepared by radiofrequency (rf) plasma decomposition of CH4/N2 mixture was determined by soft x-ray photoe1ectron spectroscopy by the mean of synchrotron radiation source. On increasing N2 fraction, the valence band shows profound changes. The new features are identified by a comparison of the experimental spectra with theoretically weighted density of the states of graphite and C3N4 structures.


Sign in / Sign up

Export Citation Format

Share Document