X-ray photoelectron study in the initial stage of oxynitridation process by excited nitrogen and oxygen

1998 ◽  
Vol 130-132 ◽  
pp. 187-191 ◽  
Author(s):  
Yoji Saito ◽  
Sumiyasu Iguchi
Keyword(s):  
X Ray ◽  
Initial Stage ◽  
Photoelectron Study ◽  
Excited Nitrogen

scholarly journals Heterogeneity of the Dendrite Array Created in the Root of Cored SX Turbine Blades during Initial Stage of Crystallization

Materials ◽  
2020 ◽  
Vol 14 (1) ◽  
pp. 80
Author(s):  
Robert Paszkowski ◽  
Jacek Krawczyk ◽  
Włodzimierz Bogdanowicz ◽  
Dariusz Szeliga ◽  
Jan Sieniawski
Keyword(s):  
Transverse Section ◽  
Turbine Blades ◽  
Lateral Growth ◽  
X Ray Diffraction ◽  
Dendrite Branching ◽  
X Ray ◽  
Initial Stage ◽  
Vertical Bridgman ◽  
Lateral Dendrite ◽  
Root Connection

The roots of cored single-crystalline turbine blades made of a nickel-based CMSX-4 superalloy were studied. The casts were solidified by the vertical Bridgman method in an industrial ALD furnace using the spiral selector and selector continuer situated asymmetrically in the blade root transverse section. Scanning electron microscopy, the Laue diffraction and X-ray diffraction topography were used to visualize the dendrite array and the local crystal misorientation of the roots. It has been stated that heterogeneity of the dendrite array and creation of low-angle boundaries (LABs) are mostly related to the lateral dendrite branching and rapid growth of the secondary and tertiary dendrites near the surface of the continuer–root connection. These processes have an unsteady character. Additionally, the influence of the mould walls on the dendrite array heterogeneity was studied. The processes of the lateral growth of the secondary dendrites and competitive longitudinal growth of the tertiary dendrites are discussed and a method of reducing the heterogeneity of the root dendrite array is proposed.

X-ray photoelectron study of complexation between uranyl group and chitosan

2008 ◽  
Vol 50 (5) ◽  
pp. 523-529 ◽  
Author(s):  
A. N. Veleshko ◽  
E. V. Rumyantseva ◽  
I. E. Veleshko ◽  
A. Yu. Teterin ◽  
K. I. Maslakov ◽  
...  
Keyword(s):  
X Ray ◽  
Photoelectron Study

Incorporation and Role of Nitrogen During Oxynitridation of Silicon Studied by Photoelectron Spectroscopy

1999 ◽  
Vol 567 ◽  
Author(s):  
Masayuki Suzuki ◽  
Yoji Saito
Keyword(s):  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Oxide Films ◽  
Silicon Surfaces ◽  
Gaseous Mixtures ◽  
X Ray ◽  
Initial Stage ◽  
Thermal Stability Of

ABSTRACTWe tried direct oxynitridation of silicon surfaces by remote-plasma-exited nitrogen and oxygen gaseous mixtures at 700°C in a high vacuum. The oxynitrided surfaces were investigated with in-situ X-ray photoelectron spectroscopy. With increase of the oxynitridation time, the surface density of nitrogen gradually increases, but that of oxygen shows nearly saturation behavior after the rapid increase in the initial stage. We also annealed the grown oxynitride and oxide films to investigate the role of the contained nitrogen. The desorption rate of oxygen from the oxynitride films is much less than that from oxide films. We confirmed that nitrogen stabilizes the thermal stability of these oxynitride films.

scholarly journals X-ray photoelectron study of high-energy He+implanted a-SiC:H thin films

2010 ◽  
Vol 253 ◽  
pp. 012052 ◽  
Author(s):  
T Tsvetkova ◽  
P Sellin ◽  
D Dimova-Malinovska ◽  
O Angelov ◽  
V Krastev ◽  
...  
Keyword(s):  
Thin Films ◽  
High Energy ◽  
X Ray ◽  
Photoelectron Study

Electronic structure of bismuth ferrite and hematite single crystals: X-ray photoelectron study and calculation

2011 ◽  
Vol 53 (1) ◽  
pp. 41-47 ◽  
Author(s):  
A. T. Kozakov ◽  
K. A. Guglev ◽  
V. V. Ilyasov ◽  
I. V. Ershov ◽  
A. V. Nikol’skii ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Single Crystals ◽  
Bismuth Ferrite ◽  
X Ray ◽  
Photoelectron Study

Interdiffusion in Co/Ta Multilayer Thin Films

2005 ◽  
Vol 237-240 ◽  
pp. 554-559 ◽  
Author(s):  
Hui Myeong Lee ◽  
Byeong Seon Lee ◽  
Chan Gyu Lee ◽  
Yasunori Hayashi ◽  
Bon Heun Koo
Keyword(s):  
Structural Relaxation ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
Stress Release ◽  
X Ray ◽  
Angle Measurements ◽  
Peak Intensity ◽  
Straight Line ◽  
Initial Stage ◽  
Interdiffusion Coefficients

We will discuss the stress release phenomena, structural relaxation and interdiffusion processes during annealing. The [Co(4nm)/Ta(4nm)]38 multilayers were prepared by dc magnetron sputtering on Si substrate. The multilayers were annealed at various temperatures (523 - 673K) in vacuum (under 10-5 torr) furnace. The effective interdiffusion coefficients were determined from the slope of the best straight line fit of the first peak intensity versus annealing time [d ln(I(t)/I(0)) /dt] by X-ray diffraction (XRD) low angle measurements. The drastic decrease of the relative intensity in the initial stage shown due to the structural relaxation was excluded in the calculation of effective interdiffusion coefficients. The temperature dependence of interdiffusion in the range of 523 - 673K is described by D = 3.2×10-19 exp(-0.51±0.11 eV/kT) m2s-1.

Sub-nm-Scale Depth Profiling of Nitrogen in NO- and N2-Annealed SiO2/4H-SiC(0001) Structures

2019 ◽  
Vol 963 ◽  
pp. 226-229
Author(s):  
Kidist Moges ◽  
Mitsuru Sometani ◽  
Takuji Hosoi ◽  
Takayoshi Shimura ◽  
Shinsuke Harada ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
High Temperature ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Annealing Duration ◽  
Nanometer Scale ◽  
Pure Nitrogen ◽  
X Ray ◽  
Initial Stage

We demonstrated an x-ray photoelectron spectroscopy (XPS)-based technique to reveal the detailed nitrogen profile in nitrided SiO2/4H-SiC structures with sub-nanometer-scale-resolution. In this work, nitric oxide (NO)- and pure nitrogen (N2)-annealed SiO2/4H-SiC(0001) structures were characterized. The measured results of NO-annealed samples with various annealing duration indicate that preferential nitridation just at the SiO2/SiC interfaces (~0.3 nm) proceeds in the initial stage of NO annealing and a longer duration leads to the distribution of nitrogen in the bulk SiO2 within few nanometers of the interface. The high-temperature N2 annealing was found to induce not only SiO2/SiC interface nitridation similarly to NO annealing but also SiO2 surface nitridation.

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