GMR thin films deposited by a new MOCVD-injection method. Preparation, transport properties and magnetic behaviour of self-doped lanthanum manganites La1 − xMnO3 − δ (0 ⩽ x ⩽ 0.3)

1998 ◽  
Vol 177-181 ◽  
pp. 1227-1228 ◽  
Author(s):  
S. Pignard ◽  
H. Vincent ◽  
J.P. Sénateur ◽  
J. Pierre
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Magnetic Behaviour ◽  
Injection Method ◽  
Lanthanum Manganites ◽  
Doped Lanthanum Manganites

Penetration of the high-frequency electromagnetic field through thin films of Sr-doped lanthanum manganites

2009 ◽  
Vol 517 (9) ◽  
pp. 2979-2983
Author(s):  
A. Nosov ◽  
A. Rinkevich ◽  
V. Vassiliev ◽  
E. Vladimirova ◽  
H. Szymczak ◽  
...  
Keyword(s):  
Thin Films ◽  
Electromagnetic Field ◽  
High Frequency ◽  
Lanthanum Manganites ◽  
High Frequency Electromagnetic Field ◽  
Doped Lanthanum Manganites

scholarly journals Одновременное управление интенсивностью отраженного и прошедшего света в тонких пленках манганитов

2021 ◽  
Vol 91 (6) ◽  
pp. 1015
Author(s):  
Ю.П. Сухоруков ◽  
А.В. Телегин ◽  
Е.А. Ганьшина
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Field Intensity ◽  
Magnetic Field Intensity ◽  
Lanthanum Manganites ◽  
Simultaneous Control ◽  
Separate Control ◽  
Reflection Of Light ◽  
The Magnetic Field ◽  
Doped Lanthanum Manganites

A method is described for simultaneous control of the magnetic field intensity of reflected and transmitted unpolarized light in films of magnetics with giant magnetoreflection and magnetotransmission effects. The advantages of the proposed method over the methods of separate control of the intensity of transmission or reflection of light are shown. The spectral, temperature and dynamic ranges of application of the method are described on the example of thin films of doped lanthanum manganites.

Sodium doped lanthanum manganites thin films: Influence of the oxygen content on the structural parameters

2004 ◽  
Vol 118 ◽  
pp. 165-171 ◽  
Author(s):  
I. Alessandri ◽  
E. Bontempi ◽  
L. Sangaletti ◽  
S. Pagliara ◽  
L. Malavasi ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Content ◽  
Structural Parameters ◽  
Lanthanum Manganites ◽  
Doped Lanthanum Manganites

scholarly journals Stoichiometry control and electronic and transport properties of pyrochlore Bi2Ir2O7 thin films

2018 ◽  
Vol 2 (11) ◽  
Author(s):  
W. C. Yang ◽  
Y. T. Xie ◽  
X. Sun ◽  
X. H. Zhang ◽  
K. Park ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Stoichiometry Control

scholarly journals Fabrication, micro-structure characteristics and transport properties of co-evaporated thin films of Bi2Te3 on AlN coated stainless steel foils

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aziz Ahmed ◽  
Seungwoo Han
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Stainless Steel ◽  
Substrate Temperature ◽  
Transport Properties ◽  
Structural Defects ◽  
Film Composition ◽  
High Substrate ◽  
Foil Substrate

AbstractN-type bismuth telluride (Bi2Te3) thin films were prepared on an aluminum nitride (AlN)-coated stainless steel foil substrate to obtain optimal thermoelectric performance. The thermal co-evaporation method was adopted so that we could vary the thin film composition, enabling us to investigate the relationship between the film composition, microstructure, crystal preferred orientation and thermoelectric properties. The influence of the substrate temperature was also investigated by synthesizing two sets of thin film samples; in one set the substrate was kept at room temperature (RT) while in the other set the substrate was maintained at a high temperature, of 300 °C, during deposition. The samples deposited at RT were amorphous in the as-deposited state and therefore were annealed at 280 °C to promote crystallization and phase development. The electrical resistivity and Seebeck coefficient were measured and the results were interpreted. Both the transport properties and crystal structure were observed to be strongly affected by non-stoichiometry and the choice of substrate temperature. We observed columnar microstructures with hexagonal grains and a multi-oriented crystal structure for the thin films deposited at high substrate temperatures, whereas highly (00 l) textured thin films with columns consisting of in-plane layers were fabricated from the stoichiometric annealed thin film samples originally synthesized at RT. Special emphasis was placed on examining the nature of tellurium (Te) atom based structural defects and their influence on thin film properties. We report maximum power factor (PF) of 1.35 mW/m K2 for near-stoichiometric film deposited at high substrate temperature, which was the highest among all studied cases.

Zirconium-doped lanthanum manganites for catalytic deep oxidation of propene

2010 ◽  
Vol 385 (1-2) ◽  
pp. 163-169 ◽  
Author(s):  
Virginie Roche ◽  
Linda Mazri ◽  
Antoinette Boréave ◽  
M.H. Ta ◽  
Laurence Retailleau-Mevel ◽  
...  
Keyword(s):  
Deep Oxidation ◽  
Lanthanum Manganites ◽  
Doped Lanthanum Manganites

scholarly journals Transport properties in chromium-doped Ti2O3 thin films

2005 ◽  
Vol 97 (10) ◽  
pp. 10D319 ◽  
Author(s):  
Zhenjun Wang ◽  
Jinke Tang ◽  
Leonard Spinu
Keyword(s):  
Thin Films ◽  
Transport Properties
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