Current effect on the voltage noise near the transition region in YBa2Cu3O7-δ single crystal thin films

2000 ◽  
Vol 341-348 ◽  
pp. 1225-1226
Author(s):  
A. Taoufik ◽  
S. Senoussi ◽  
A. Tirbiyine ◽  
A. Ramzi
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Transition Region ◽  
Voltage Noise ◽  
Current Effect

Single Crystal, High Band Gap CdS Thin Films Grown by RF Magnetron Sputtering in Argon Atmosphere for Solar Cell Applications

2018 ◽  
Vol 10 (3) ◽  
pp. 03005-1-03005-6 ◽  
Author(s):  
Rupali Kulkarni ◽  
◽  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhawar ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Single Crystal ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Argon Atmosphere ◽  
Cds Thin Films ◽  
High Band

Structural investigations of the SiO2GeO2 single crystal thin films by XPS

Vacuum ◽  
1991 ◽  
Vol 42 (16) ◽  
pp. 1070
Author(s):  
SL Sorokina ◽  
JP Dikov
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Structural Investigations

Single crystal-like thin films of blue bronze

2021 ◽  
pp. 138745
Author(s):  
Damir Dominko ◽  
Damir Starešinić ◽  
Katica Biljaković ◽  
Maja Đekić ◽  
Amra Salčinović Fetić ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Blue Bronze

Perovskite (PEA)2Pb(I1-xBrx)4 single crystal thin films for improving optoelectronic performances

2021 ◽  
Vol 117 ◽  
pp. 111074
Author(s):  
Xinyi Zhang ◽  
Di Zhao ◽  
Ziye Huo ◽  
Jun Sun ◽  
Yufeng Hu ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal

scholarly journals Tuning the Electrical Properties of NiO Thin Films by Stoichiometry and Microstructure

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 697
Author(s):  
Yu-He Liu ◽  
Xiao-Yan Liu ◽  
Hui Sun ◽  
Bo Dai ◽  
Peng Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Energy Loss ◽  
Single Crystal ◽  
Oxygen Stoichiometry ◽  
High Resistivity ◽  
Edge Structure ◽  
Glass Substrates ◽  
Lower Resistivity

Here, the electrical properties of NiO thin films grown on glass and Al2O3 (0001) substrates have been investigated. It was found that the resistivity of NiO thin films strongly depends on oxygen stoichiometry. Nearly perfect stoichiometry yields extremely high resistivity. In contrast, off-stoichiometric thin films possess much lower resistivity, especially for oxygen-rich composition. A side-by-side comparison of energy loss near the edge structure spectra of Ni L3 edges between our NiO thin films and other theoretical spectra rules out the existence of Ni3+ in NiO thin films, which contradicts the traditional hypothesis. In addition, epitaxial NiO thin films grown on Al2O3 (0001) single crystal substrates exhibit much higher resistivity than those on glass substrates, even if they are deposited simultaneously. This feature indicates the microstructure dependence of electrical properties.

Microstructure and enhanced in-plane ferroelectricity of Ba0.7Sr0.3TiO3 thin films grown on MgAl2O4 (001) single-crystal substrate

2006 ◽  
Vol 89 (23) ◽  
pp. 232906 ◽  
Author(s):  
X. Y. Zhou ◽  
T. Heindl ◽  
G. K. H. Pang ◽  
J. Miao ◽  
R. K. Zheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Single Crystal Substrate ◽  
Crystal Substrate

Bitter Patterns on Single‐Crystal Thin Films of Iron and Nickel

1962 ◽  
Vol 33 (3) ◽  
pp. 1113-1115 ◽  
Author(s):  
H. Sato ◽  
R. S. Toth ◽  
R. W. Astrue
Keyword(s):  
Thin Films ◽  
Single Crystal

INVESTIGATION OF THE Si:H FILMS DEPOSITED NEAR THE TRANSITION REGION FOR APPLICATION IN SOLAR CELLS

2006 ◽  
Vol 20 (27) ◽  
pp. 1739-1747 ◽  
Author(s):  
QINGSONG LEI ◽  
ZHIMENG WU ◽  
XINHUA GENG ◽  
YING ZHAO ◽  
JIANPING XI
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Transition Region ◽  
Chemical Vapor ◽  
Transition Process ◽  
Very High Frequency ◽  
Working Pressure ◽  
Hydrogenated Silicon ◽  
Silicon Thin Films ◽  
Narrow Region

Hydrogenated silicon thin films (Si:H) have been deposited by using very high-frequency plasma-enhanced chemical vapor deposition (VHF PECVD). The structural, electrical and optical properties of the films were characterized. The transition process and the effect of pressure were studied. Results suggest that a narrow region, in which the transition from microcrystalline to amorphous growth takes place, exists in the regime of silane concentration (SC). This region is influenced by the working pressure (P). At lower pressure, the transition region is shifted to higher SC. Microcrystalline silicon (μ c-Si:H ) thin films deposited near transition region was applied as i-layer to the p-i-n solar cells. An efficiency of about 5.30% was obtained.

Vacancy-induced toughening in hard single-crystal V 0.5 Mo 0.5 N x /MgO(0 0 1) thin films

2014 ◽  
Vol 77 ◽  
pp. 394-400 ◽  
Author(s):  
H. Kindlund ◽  
D.G. Sangiovanni ◽  
J. Lu ◽  
J. Jensen ◽  
V. Chirita ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal
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