X-ray photoelectron spectroscopy characterization of CN x thin films deposited by electron beam evaporation and nitrogen ion bombardment

2000 ◽  
Vol 9 (3-6) ◽  
pp. 562-565 ◽  
Author(s):  
Peter Petrov ◽  
D.B. Dimitrov ◽  
V. Krastev ◽  
Ch. Georgiev ◽  
C. Popov
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Photoelectron Spectroscopy ◽  
Ion Bombardment ◽  
Electron Beam Evaporation ◽  
X Ray ◽  
Nitrogen Ion

Chemistry, microstructure, and electrical properties at interfaces between thin films of cobalt and alpha (6H) silicon carbide (0001)

1995 ◽  
Vol 10 (1) ◽  
pp. 26-33 ◽  
Author(s):  
L.M. Porter ◽  
R.F. Davis ◽  
J.S. Bow ◽  
M.J. Kim ◽  
R.W. Carpenter
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Electron Beam ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Electron Beam Evaporation ◽  
Leakage Currents ◽  
X Ray ◽  
Transmission Electron

Thin films (4–1000 Å) of Co were deposited onto n-type 6H-SiC(0001) wafers by UHV electron beam evaporation. The chemistry, microstructure, and electrical properties were determined using x-ray photoelectron spectroscopy, high resolution transmission electron microscopy, and I-V and C-V measurements, respectively. The as-deposited contacts exhibited excellent rectifying behavior with low ideality factors and leakage currents of n < 1.06 and 2.0 × 10−8 A/cm2 at −10 V, respectively. During annealing at 1000 °C for 2 min, significant reaction occurred resulting in the formation of CoSi and graphite. These annealed contacts exhibited ohmic-like character, which is believed to be due to defects created in the interface region.

Characterization of Nd:Y3Al5O12 Thin Films Prepared by Electron Beam Evaporation Deposition

2013 ◽  
Vol 320 ◽  
pp. 150-154
Author(s):  
Hao Ren ◽  
Qun Zeng ◽  
Xi Hui Liang
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Room Temperature ◽  
Electron Beam Evaporation ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Surface Morphologies ◽  
Ingaas Detector

Nd:YAG thin films have been prepared on Si (100) substrates by electron beam evaporation deposition. The surface morphologies, crystalline phases and optical properties of the Nd:YAG thin films were characterized by x-ray diffraction, scanning electron microscopy, photoluminescence spectroscopy, and spectrophotometer. The crystallization of Nd:YAG thin films was improved after annealing at 1100 °C for 1 hour in vacuum. Excited by a Ti:sapphire laser at 808 nm, photoluminescence spectra of Nd:YAG thin films were measured at room temperature, and the transition of4F3/24I11/2of Nd3+in YAG in the region of 1064 nm were detected by a liquid nitrogen cooled InGaAs detector array.

scholarly journals Tunable Optical Properties of Amorphous-Like Ga2O3 Thin Films Deposited by Electron-Beam Evaporation with Varying Oxygen Partial Pressures

Nanomaterials ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1760
Author(s):  
Shijie Li ◽  
Chen Yang ◽  
Jin Zhang ◽  
Linpeng Dong ◽  
Changlong Cai ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Electron Beam ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Photoelectron Spectroscopy ◽  
Test System ◽  
Electron Beam Evaporation ◽  
X Ray ◽  
Ga2o3 Film

Ga2O3 thin films were fabricated by the electron-beam evaporation technique at a varying oxygen partial pressure from 0 to 2.0 × 10−2 Pa. The effect of oxygen partial pressure on the crystalline structure and optical properties of the Ga2O3 films was analyzed using sophisticated techniques including X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Raman spectroscopy, spectroscopic ellipsometry, ultraviolet-visible spectroscopy and a laser-induced damage test system. The correlation between the oxygen partial pressure and the film’s properties in optics and materials were investigated. XRD and Raman revealed that all films were amorphous in spite of applying a varying oxygen partial pressure. With the change of oxygen partial pressure, XPS data indicated that the content of oxygen in the Ga2O3 films could be broadly modulable. As a result, a changeable refractive index of the Ga2O3 film is realizable and a variable blue-shift of absorption edges in transmittance spectra of the films is achievable. Moreover, the damage threshold value varied from 0.41 to 7.51 J/cm2 according to the rise of oxygen partial pressure. These results demonstrated that the optical properties of Ga2O3 film can be broadly tunable by controlling the oxygen content in the film.

The Growth and Characterization of Germanium-Carbon Alloy Thin Films

1992 ◽  
Vol 270 ◽  
Author(s):  
Haojie Yuan ◽  
R. Stanley Williams
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Vacuum Chamber ◽  
Optical Band Gap ◽  
High Vacuum ◽  
Optical Absorption Spectroscopy ◽  
Alloy Thin Film ◽  
New Materials ◽  
X Ray

ABSTRACTThin films of pure germanium-carbon alloys (GexC1−x with x ≈ 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) have been grown on Si(100) and A12O3 (0001) substrates by pulsed laser ablation in a high vacuum chamber. The films were analyzed by x-ray θ-2θ diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), conductivity measurements and optical absorption spectroscopy. The analyses of these new materials showed that films of all compositions were amorphous, free of contamination and uniform in composition. By changing the film composition, the optical band gap of these semiconducting films was varied from 0.00eV to 0.85eV for x = 0.0 to 1.0 respectively. According to the AES results, the carbon atoms in the Ge-C alloy thin film samples has a bonding configuration that is a mixture of sp2 and sp3 hybridizations.

COMPOSITION AND NANOHARDNESS OF SiC FILMS DEPOSITED BY ELECTRON BEAM PHYSICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (06n07) ◽  
pp. 1910-1915 ◽  
Author(s):  
MIN TENG ◽  
XIAODONG HE ◽  
YUE SUN
Keyword(s):  
Electron Beam ◽  
Chemical Bonding ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Physical Vapor Deposition ◽  
Current Intensity ◽  
X Ray ◽  
Deposited Films ◽  
Sic Films

SiC films with a quantity of carbon and silicon were obtained by electron beam physical vapor deposition (EB-PVD) from a sintered SiC target with different current intensity of EB. The X-ray photoelectron spectroscopy (XPS) was used for characterization of chemical bonding states of C and Si elements in SiC films in order to study the influence of current intensity of EB on the compositions in the deposited films. At the same time, the nanohardness of the deposited films was investigated.

REALIZATION AND CHARACTERIZATION OF e-BEAM COMPLETELY EVAPORATED BSCCO THIN FILMS

1991 ◽  
Vol 05 (18) ◽  
pp. 1203-1211 ◽  
Author(s):  
C. ATTANASIO ◽  
L. MARITATO ◽  
A. NIGRO ◽  
S. PRISHEPA ◽  
R. SCAFURO
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Single Crystal ◽  
Critical Current ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Reliable Technique ◽  
X Ray ◽  
Eds Analysis

BSCCO thin films with T c (R = 0) higher than 80 K have been routinely prepared using a simple and reliable technique in which we completely electron beam evaporated weighted amounts of bulk pellets. The films were grown on MgO single crystal (100) substrates and showed, after an ex-situ annealing at high temperatures (840–880° C) for several hours, a strong preferential orientation with the c-axis perpendicular to the plane of the substrate. The films were characterized by Θ − 2Θ X-ray diffraction and EDS analysis and by paraconductivity and critical current measurements.

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