On the role of tin underlays for the prevention of thermal grooving in thin gold films

1986 ◽  
Vol 44 ◽  
pp. 732-733
Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff
Keyword(s):  
Thin Film ◽  
Free Surface ◽  
Grain Boundary ◽  
Beneficial Effect ◽  
Failure Mechanism ◽  
Failure Mechanisms ◽  
Distinct Advantage ◽  
Gold Films ◽  
Gold Thin Film

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.

Competitive Motions of Grain-Boundary and Free Surface in Selecting Thin Film Morphology

1996 ◽  
Vol 441 ◽  
Author(s):  
B. Sun ◽  
Z. Suo ◽  
W. Yang
Keyword(s):  
Thin Film ◽  
Free Energy ◽  
Free Surface ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Analytic Solutions ◽  
Film Morphology ◽  
Polycrystalline Thin Film ◽  
Continuous Film

AbstractDuring annealing of a polycrystalline thin film, grain-boundaries and film surfaces move. If the grain-boundaries move faster, the grains having the lowest free energy grow at the expense of others, resulting in a continuous film with large grains. If the film surfaces move faster, they groove along their junctions with the grain-boundaries, breaking the film to islands. This paper describes analytic solutions for steady surface motions, and discusses the morphology selection.

Role of Failure-Mechanism Identification in Accelerated Testing

1993 ◽  
Vol 36 (4) ◽  
pp. 39-45
Author(s):  
J. Hu ◽  
D. Barker ◽  
A. Dasgupta ◽  
A. Arora
Keyword(s):  
Failure Mechanism ◽  
Failure Mechanisms ◽  
Electronic Devices ◽  
Operating Conditions ◽  
Accelerated Life Testing ◽  
Accelerated Testing ◽  
Normal Operating ◽  
Accelerated Life ◽  
Cut Method

Accelerated life testing techniques provide a short-cut method to investigate the reliability of electronic devices with respect to certain dominant failure mechanisms that occur under normal operating conditions. However, accelerated tests have often been conducted without knowledge of the failure mechanisms and without ensuring that the test accelerated the same mechanism as that obscrved under normal operating conditions. This paper summarizes common failure mechanisms in electronic devices and packages and investigates possible failure mechanism shifting during accelerated testing.

Observation and Modelling of Electromigration-Induced Void Growth In AI-Based Interconnects

1993 ◽  
Vol 308 ◽  
Author(s):  
O. Kraft ◽  
S. Bader ◽  
J.E. Sanchez ◽  
E. Arzt
Keyword(s):  
Thin Film ◽  
Failure Mechanism ◽  
Void Growth ◽  
Pure Aluminum ◽  
Failure Mechanisms ◽  
Reflow Process ◽  
Shape Effects ◽  
Substantial Progress ◽  
Void Shape ◽  
Aluminum Interconnects

ABSTRACTAccelerated electromigation tests on unpassivated, pure aluminum interconnects were performed. The failure mechanisms were observed by interrupting the tests and examining the conductor lines using an SEM. Because the metal thin film was subjected to a so-called laser reflow process before patterning, grain boundaries were visible in the SEM as thermal grooves. Voids were observed to move along the line and to grow in a transgranular manner, and a characteristic asymmetric void shape was identified which seems to be related to the failure mechanism. It is argued that substantial progress in modelling and understanding of electromigration failure can be made by consideration of such void shape effects.

scholarly journals Observation and Modelling of Electromigration-Induced Void growth in Al-Based Interconnects

1993 ◽  
Vol 309 ◽  
Author(s):  
O. Kraft ◽  
S. Bader ◽  
J.E. Sanchez ◽  
E. Arzt
Keyword(s):  
Thin Film ◽  
Failure Mechanism ◽  
Void Growth ◽  
Pure Aluminum ◽  
Failure Mechanisms ◽  
Reflow Process ◽  
Shape Effects ◽  
Substantial Progress ◽  
Void Shape ◽  
Aluminum Interconnects

AbstractAccelerated electromigation tests on unpassivated, pure aluminum interconnects were performed. The failure mechanisms were observed by interrupting the tests and exanming the conductor lines using an SEM. Because the metal thin film was subjected to a so-called laser reflow process before patterning, grain boundaries were visible in the SEM as thermal grooves. Voids were observed to move along the line and to grow in a transgranular manner, and a characteristic asymmetric void shape was identified which seems to be related to the failure mechanism. It is argued that substantial progress in modelling and understanding of electromigration failure can be made by consideration of such void shape effects.

Nanostructure, Nanochemistry and Grain Boundary Conductivity of Yttria-Doped Zirconia

2005 ◽  
Vol 106 ◽  
pp. 83-86
Author(s):  
A. Rizea ◽  
Jean Marc Raulot ◽  
C. Petot ◽  
Georgette Petot-Ervas ◽  
Gianguido Baldinozzi
Keyword(s):  
Grain Boundary ◽  
Beneficial Effect ◽  
Grain Boundaries ◽  
Strong Interaction ◽  
Glassy Phase ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Boundary Conductivity ◽  
Comprehensive Study

This work was directed at a comprehensive study of the role of the nanostructure and nanochemistry on the transport properties of yttria-stabilized zirconia. Alumina additions lead to a decrease of sgb when the samples have clean grain boundaries, while sgb goes through a maximum in samples having glassy grain boundaries. The differences were attributed to the strong interaction between Al2O3 and SiO2 impurities leading to a glassy phase depletion at the grain-boundaries, due to a change in wettability. Moreover, XPS analyses show that Si and Y segregate near these interfaces according to a kinetic demixing process, explaining why a faster cooling rate after sintering has a beneficial effect on sgb.

Molecular Dynamics Study of the Role of the Free Surface on Block Copolymer Thin Film Morphology and Alignment

ACS Nano ◽  
2011 ◽  
Vol 5 (4) ◽  
pp. 2895-2907 ◽  
Author(s):  
Christopher Forrey ◽  
Kevin G. Yager ◽  
Samuel P. Broadaway
Keyword(s):  
Thin Film ◽  
Molecular Dynamics ◽  
Free Surface ◽  
Block Copolymer ◽  
Film Morphology

Strain-induced martensite effects on transgranular carbide precipitation in type 304 stainless steels

1991 ◽  
Vol 49 ◽  
pp. 604-605
Author(s):  
A.H. Advani ◽  
L.E. Murr ◽  
D. Matlock
Keyword(s):  
Heat Treatment ◽  
Grain Boundary ◽  
Stress Corrosion Cracking ◽  
Stainless Steels ◽  
Deformation Twin ◽  
Austenitic Stainless Steels ◽  
Carbide Precipitation ◽  
Strain Induced Martensite ◽  
Type 304

Thermomechanically induced strain is a key variable producing accelerated carbide precipitation, sensitization and stress corrosion cracking in austenitic stainless steels (SS). Recent work has indicated that higher levels of strain (above 20%) also produce transgranular (TG) carbide precipitation and corrosion simultaneous with the grain boundary phenomenon in 316 SS. Transgranular precipitates were noted to form primarily on deformation twin-fault planes and their intersections in 316 SS.Briant has indicated that TG precipitation in 316 SS is significantly different from 304 SS due to the formation of strain-induced martensite on 304 SS, though an understanding of the role of martensite on the process has not been developed. This study is concerned with evaluating the effects of strain and strain-induced martensite on TG carbide precipitation in 304 SS. The study was performed on samples of a 0.051%C-304 SS deformed to 33% followed by heat treatment at 670°C for 1 h.

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