Nanostructure, Nanochemistry and Grain Boundary Conductivity of Yttria-Doped Zirconia

2005 ◽  
Vol 106 ◽  
pp. 83-86
Author(s):  
A. Rizea ◽  
Jean Marc Raulot ◽  
C. Petot ◽  
Georgette Petot-Ervas ◽  
Gianguido Baldinozzi
Keyword(s):  
Grain Boundary ◽  
Beneficial Effect ◽  
Grain Boundaries ◽  
Strong Interaction ◽  
Glassy Phase ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Boundary Conductivity ◽  
Comprehensive Study

This work was directed at a comprehensive study of the role of the nanostructure and nanochemistry on the transport properties of yttria-stabilized zirconia. Alumina additions lead to a decrease of sgb when the samples have clean grain boundaries, while sgb goes through a maximum in samples having glassy grain boundaries. The differences were attributed to the strong interaction between Al2O3 and SiO2 impurities leading to a glassy phase depletion at the grain-boundaries, due to a change in wettability. Moreover, XPS analyses show that Si and Y segregate near these interfaces according to a kinetic demixing process, explaining why a faster cooling rate after sintering has a beneficial effect on sgb.

Grain-Size-Dependent Thermal Transport Properties in Nanocrystalline Yttria-Stabilized Zirconia

2001 ◽  
Vol 703 ◽  
Author(s):  
Ho-Soon Yang ◽  
J.A. Eastman ◽  
L.J. Thompson ◽  
G.-R. Bai
Keyword(s):  
Grain Boundaries ◽  
Thermal Transport ◽  
Chemical Vapor ◽  
Yttria Stabilized Zirconia ◽  
Organic Chemical ◽  
Stabilized Zirconia ◽  
Size Dependent ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTUnderstanding the role of grain boundaries in controlling heat flow is critical to the success of many envisioned applications of nanocrystalline materials. This study focuses on the effect of grain boundaries on thermal transport behavior in nanocrystalline yttria-stabilized zirconia (YSZ) coatings prepared by metal-organic chemical vapor deposition.

Systematic Study of Grain Boundary Structure and Chemical Analysis of [100] and [111] Tilt Grain Boundaries in Yttria-Stabilized Zirconia

2004 ◽  
Vol 10 (S02) ◽  
pp. 304-305 ◽  
Author(s):  
James P Buban ◽  
Katsuyuki Matsunaga ◽  
Takahisa Yamamoto ◽  
Yuichi Ikuhara
Keyword(s):  
Chemical Analysis ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Systematic Study ◽  
Yttria Stabilized Zirconia ◽  
Boundary Structure ◽  
Stabilized Zirconia ◽  
Grain Boundary Structure

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

Role of grain boundaries on the electrical properties of titania doped yttria stabilized zirconia

1995 ◽  
Vol 30 (4) ◽  
pp. 515-522 ◽  
Author(s):  
M.T. Colomer ◽  
L.S.M. Traqueia ◽  
J.R. Jurado ◽  
F.M.B. Marques
Keyword(s):  
Electrical Properties ◽  
Grain Boundaries ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia

The Grain Size Effect on the Yttria Stabilized Zirconia Grain Boundary Conductivity

2010 ◽  
Vol 10 (11) ◽  
pp. 7411-7415 ◽  
Author(s):  
Victor Ivanov ◽  
Sergey Shkerin ◽  
Alexey Rempel ◽  
Vladimir Khrustov ◽  
Alexander Lipilin ◽  
...  
Keyword(s):  
Grain Size ◽  
Grain Boundary ◽  
Size Effect ◽  
Yttria Stabilized Zirconia ◽  
Grain Size Effect ◽  
Stabilized Zirconia ◽  
Boundary Conductivity

Improvement of Grain-Boundary Conductivity of 8 mol % Yttria-Stabilized Zirconia by Precursor Scavenging of Siliceous Phase

2000 ◽  
Vol 147 (7) ◽  
pp. 2822 ◽  
Author(s):  
Jong-Heun Lee ◽  
Toshiyuki Mori ◽  
Ji-Guang Li ◽  
Takayasu Ikegami ◽  
Manabu Komatsu ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Boundary Conductivity

On the role of tin underlays for the prevention of thermal grooving in thin gold films

1986 ◽  
Vol 44 ◽  
pp. 732-733
Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff
Keyword(s):  
Thin Film ◽  
Free Surface ◽  
Grain Boundary ◽  
Beneficial Effect ◽  
Failure Mechanism ◽  
Failure Mechanisms ◽  
Distinct Advantage ◽  
Gold Films ◽  
Gold Thin Film

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.

Microstructure of Polycrystalline MgO Penetrated by a Silicate Liquid

1996 ◽  
Vol 2 (3) ◽  
pp. 113-128 ◽  
Author(s):  
Sundar Ramamurthy ◽  
Michael P. Mallamaci ◽  
Catherine M. Zimmerman ◽  
C. Barry Carter ◽  
Peter R. Duncombe ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Grain Growth ◽  
Glassy Phase ◽  
Silicate Liquid ◽  
Two Phase ◽  
The Matrix ◽  
Devitrification Process ◽  
Phase Mixture

Dense, polycrystalline MgO was infiltrated with monticellite (CaMgSiO4) liquid to study the penetration of liquid along the grain boundaries of MgO. Grain growth was found to be restricted with increasing amounts of liquid. The inter-granular regions were generally found to be comprised of a two-phase mixture: crystalline monticellite and a glassy phase rich in the impurities present in the starting MgO material. MgO grains act as seeding agents for the crystallization of monticellite. The location and composition of the glassy phase with respect to the MgO grains emphasizes the role of intergranular liquid during the devitrification process in “snowplowing” impurities present in the matrix.

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