Near-field scanning optical microscopy imaging of luminescent polymers

1996 ◽  
Vol 54 ◽  
pp. 860-861
Author(s):  
J. Kerimo ◽  
D. A. Vanden Bout ◽  
D. A. Higgins ◽  
P.F. Barbara
Keyword(s):  
Organic Semiconductors ◽  
Near Field ◽  
Practical Importance ◽  
Numerical Aperture ◽  
Optical Resolution ◽  
Microscopy Imaging ◽  
Light Emitting ◽  
Scanning Optical Microscopy ◽  
Luminescent Polymer ◽  
Near Field Scanning

Conjugated polymers such as poly(p-pyridyl vinylene)(PPyV) have interesting photoluminescence and electroluminescence properties. These polymers have a high quantum yield of luminescence and are of great practical importance as light-emitting diodes or organic semiconductors. We have performed studies on thin films(about 50nm) of these polymers using the high spatial optical resolution of NSOM.The luminescent polymer film was excited with 488nm light and the fluorescence was collected with a high numerical aperture microscope objective. Topography and NSOM fluorescence images were collected simultaneously and used for studying the morphology and optical properties of the film. An example of topography and fluorescence NSOM images of the film is shown in Fig. 1a. The films are very flat (2nm rms variations in topography) and have very few features. The NSOM fluorescence image shows great film inhomogeneity with bright features varying in size from 80-250nm observed throughout (Fig. 1b). These features do not correlate with the topography, indicating they may be located in the bulk of the polymer or are simply not resolvable in the topography image.

Laser Micro-Machining Using Near-Field Nano-Optics

2004 ◽  
Author(s):  
Haseung Chung ◽  
Katsuo Kurabayashi ◽  
Suman Das
Keyword(s):  
Data Storage ◽  
Near Field ◽  
Numerical Aperture ◽  
Near Field Optics ◽  
Incident Laser Power ◽  
Scanning Optical Microscopy ◽  
Near Field Effect ◽  
Near Field Scanning ◽  
Feature Resolution ◽  
Sub Wavelength

Solid immersion lenses (SIL) facilitate high numerical aperture (NA) and consequent sub-wavelength diffraction limited focusing in near-field optics based systems. Such systems are in commercial and research use for various applications including near-field scanning optical microscopy, ultra-high density magneto-optic data storage and near-field nanolithography. Here, we present a novel nanomanufacturing method using SIL-based near-field optics for laser-induced sub-micron patterning on silicon wafers. The near-field effect of SILs was investigated by using hemispherical BK7 lenses (n=1.5196, NA=0.9237) to superfocus an incident Q-switched, 532nm Nd:YAG laser beam transmitted through a focusing objective. This optical arrangement achieved a laser-processed feature resolution near the diffraction limit in air. Results of experiments that were conducted at various processing conditions to investigate the effects of varying incident laser power (with average pulse power less than 1W), pulse repetition rate, pulse width, number of pulses and size of SIL on processed feature size and resolution are presented.

Obtaining Subwavelength Optical Spots Using Nanoscale Ridge Apertures

2006 ◽  
Vol 129 (1) ◽  
pp. 37-43 ◽  
Author(s):  
E. X. Jin ◽  
X. Xu
Keyword(s):  
Light Transmission ◽  
Incident Light ◽  
Near Field ◽  
Optical Resolution ◽  
Maximum Size ◽  
Materials Processing ◽  
Enhanced Transmission ◽  
Field Radiation ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning

Concentrating light into a nanometer domain is needed for optically based materials processing at the nanoscale. Conventional nanometer-sized apertures suffer from low light transmission, therefore poor near-field radiation. It has been suggested that ridge apertures in various shapes can provide enhanced transmission while maintaining the subwavelength optical resolution. In this work, the near-field radiation from an H-shaped ridge nanoaperture fabricated in an aluminum thin film is experimentally characterized using near-field scanning optical microscopy. With the incident light polarized along the direction across the gap in the H aperture, the H aperture is capable of providing an optical spot of about 106nm by 80nm in full-width half-maximum size, which is comparable to its gap size and substantially smaller than those obtained from the square and rectangular apertures of the same opening area. Finite different time domain simulations are used to explain the experimental results. Variations between the spot sizes obtained from a 3×3 array of H apertures are about 4–6%. The consistency and reliability of the near-field radiation from the H apertures show their potential as an efficient near-field light source for materials processing at the nanoscale.

Resolution in near-field optical microscopy

1991 ◽  
Vol 49 ◽  
pp. 454-455
Author(s):  
M. Isaacson
Keyword(s):  
Optical Microscopy ◽  
Near Field ◽  
Optical Resolution ◽  
Super Resolution ◽  
Optical Probe ◽  
Basic Principles ◽  
Scanning Optical Microscopy ◽  
Super Resolution Microscopy ◽  
Near Field Scanning ◽  
Probe Source

It has only been within the last half decade that the concept of super resolution microscopy in the near-field has been vigorously pursued and experimentally demonstrated. However, the idea of optical resolution unhindered by far field diffraction limitations was conceived more than a half century ago by Synge and further elaborated by O'Keefe in the fifties. That die method was possible, however, was only first demonstrated using 3cm wavelength microwaves almost 20 years later.The basic principles of the method of near field scanning optical microscopy (NSOM) have been described before in the literature. Briefly, the idea is as follows: if an optical probe (source or detector) of diameter D is positioned within a distance of approximately D/π from the surface of an object, and the reflected, transmitted or emitted light is detected, then the lateral spatial region from which the information occurs is limited to aregion of approximate size D and not by the wavelength of the illuminated or detected light.

scholarly journals Near-field scanning optical microscopy with monolithic silicon light emitting diode on probe tip

2008 ◽  
Vol 92 (13) ◽  
pp. 131106 ◽  
Author(s):  
Kazunori Hoshino ◽  
Lynn J. Rozanski ◽  
David A. Vanden Bout ◽  
Xiaojing Zhang
Keyword(s):  
Optical Microscopy ◽  
Light Emitting Diode ◽  
Near Field ◽  
Light Emitting ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning
Sign in / Sign up

Export Citation Format

Share Document