Nonmonotonous Distance Dependence of van der Waals Screening by a Dielectric Layer

2021 ◽  
pp. 4993-4999
Author(s):  
Jiabao Yang ◽  
Xiaofei Liu ◽  
Wanlin Guo
Keyword(s):  
Dielectric Layer ◽  
Van Der Waals ◽  
Distance Dependence

High optoelectronic performance of a local-back-gate ReS2/ReSe2 heterojunction phototransistor with hafnium oxide dielectric

Nanoscale ◽  
2021 ◽  
Author(s):  
Yu-Chun Li ◽  
Xiao-Xi Li ◽  
Guang Zeng ◽  
Yu-Chang Chen ◽  
Dingbo Chen ◽  
...  
Keyword(s):  
Dielectric Layer ◽  
Hafnium Oxide ◽  
Gate Dielectric ◽  
Van Der Waals ◽  
Back Gate

A high optoelectronic performance ReS2/ReSe2 van der Waals (vdW) heterojunction phototransistor utilizing thin hafnium oxide (HfO2) as a local-back-gate dielectric layer was preparation and explored. The heterojunction-based phototransistor exhibits a...

scholarly journals Topology and Photoelectric Properties of Heterostructure p-GaTe – n-InSe

2016 ◽  
Vol 17 (4) ◽  
pp. 507-510
Author(s):  
V.M. Katerynchuk ◽  
O.S. Litvin ◽  
Z.R. Kudrynskyi ◽  
Z.D. Kovalyuk ◽  
I.G. Tkachuk ◽  
...  
Keyword(s):  
Spectral Range ◽  
Energy Band ◽  
Dielectric Layer ◽  
Van Der Waals ◽  
Energy Band Diagram ◽  
Band Diagram ◽  
Mechanical Contact ◽  
Photoelectrical Properties ◽  
Photoelectric Properties ◽  
Van Der Waals Surface

We investigated the photoelectrical properties of the heterojunctions p-GaTe – n-InSe fabricated by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe. The AFM-images revealed that there was formed thin oxide dielectric layer of Ga2O3 on the heterointerface p-GaTe – n-InSe. The energy band diagram was constructed. It was established that the p-GaTe – n-InSe heterojunction is photosensitive in the spectral range 0,74 - 1,0 µm.

scholarly journals Puzzling Low-Temperature Behavior of the Van Der Waals Friction Force between Metallic Plates in Relative Motion

Universe ◽  
2021 ◽  
Vol 7 (11) ◽  
pp. 427
Author(s):  
George Dedkov
Keyword(s):  
Friction Force ◽  
Relative Motion ◽  
Van Der Waals ◽  
Tangential Force ◽  
Perfect Crystal ◽  
Crystal Lattices ◽  
Friction Forces ◽  
Residual Resistance ◽  
Distance Dependence ◽  
Metallic Plates

This paper presents the results of calculating the van der Waals friction force (dissipative fluctuation-electromagnetic force) between metallic (Au) plates in relative motion at temperatures close to 1 K. The stopping tangential force arises between moving plates along with the usual Casimir force of attraction, which has been routinely measured with high precision over the past two decades. At room temperatures, the former force is 10 orders of magnitude less than the latter, but at temperatures T<50 K, friction increases sharply. The calculations have been carried out in the framework of the Levin-Polevoi-Rytov fluctuation electromagnetic theory. For metallic plates with perfect crystal lattices and without defects, van der Waals friction force is shown to increase with decreasing temperature as T-4. In the presence of residual resistance ρ0 of the metal, a plateau is formed on the temperature dependence of the friction force at T→0 with a height proportional to ρ0-0.8. Another important finding is the weak force-distance dependence ~a-q (with q<1). The absolute values of the friction forces are achievable for measurements in AFM-based experiments.

Theory of films. - I. Single dielectric films

1973 ◽  
Vol 334 (1596) ◽  
pp. 49-58 ◽  
Keyword(s):  
Free Energy ◽  
Charge Density ◽  
Surface Charge ◽  
Dielectric Layer ◽  
Surface Charge Density ◽  
Aqueous Electrolyte ◽  
Van Der Waals ◽  
Double Layers ◽  
Dielectric Films ◽  
Electrical Double Layers

The van der Waals free energy of a system of two half-spaces of aqueous electrolyte separated by a dielectric layer is studied. The coupling of the van der Waals free energy to the structure of the electrical double layers in the system is calculated in two cases: (i) fixed surface charge density; (ii) fluctuating surface charge density due to the ionization of long chain carboxylic acid groups adsorbed on to the surfaces of the dielectric layer.

Infrared diode laser jet spectroscopy of the van der Waals complex (N2O)2

1997 ◽  
Vol 91 (4) ◽  
pp. 689-696 ◽  
Author(s):  
HAI-BO QIAN ◽  
WOUTER HERREBOUT ◽  
BRIAN HOWARD
Keyword(s):  
Diode Laser ◽  
Van Der Waals ◽  
Van Der Waals Complex
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