scholarly journals Heteroepitaxial Growth of Perovskite CaTaO2N Thin Films by Nitrogen Plasma-Assisted Pulsed Laser Deposition

2013 ◽  
Vol 14 (1) ◽  
pp. 87-90 ◽  
Author(s):  
Daichi Oka ◽  
Yasushi Hirose ◽  
Tomoteru Fukumura ◽  
Tetsuya Hasegawa
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Nitrogen Plasma ◽  
Laser Deposition ◽  
Heteroepitaxial Growth

Homoepitaxial and Heteroepitaxial Growth of Sr0.61Ba0.39Nb2O6 Thin Films by Pulsed Laser Deposition

1995 ◽  
Vol 401 ◽  
Author(s):  
J. S. Yeo ◽  
K. E. Youden ◽  
T. F. Huang ◽  
L. Hesselink ◽  
J. S. Harris
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Optical Loss ◽  
Laser Deposition ◽  
Heteroepitaxial Growth ◽  
Sharp Transition ◽  
Transition Band ◽  
High Resolution Tem ◽  
Plane View

AbstractEpitaxial SBN:61 films have been grown on SBN:75 and MgO substrates by pulsed laser deposition. The optical loss due to absorption is greatly reduced by increasing the oxygen pressure to 1 mbar during the cooling process. In homoepitaxy, X-ray phi scans on the (221) plane of the SBN:61 films indicate that the in-plane grains are rotated 0° or ±28° with respect to single crystalline SBN:75 substrates. Cross-section and plane view high resolution TEM reveals this crystalline relations and microstructure of SBN thin films. Pr doped SBN:61 thin films show sharp transition band at 495 nm and 607 nm in room temperature photoluminescence measurement.

Influence of the Growth Atmosphere on the Properties of AIN Grown by Plasma - Assisted Pulsed Laser Deposition

1996 ◽  
Vol 423 ◽  
Author(s):  
T. Ogawa ◽  
M. Okamoto ◽  
Y. Mori ◽  
T. Sasaki
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Pulsed Laser Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Nitrogen Plasma ◽  
Laser Deposition ◽  
Nitrogen Gas ◽  
Growth Atmosphere ◽  
Cathodoluminescence Study

AbstractWe have grown highly oriented aluminum nitride (AIN) thin films on Si (100) substrates by using pulsed laser deposition from sintering AIN targets. Three different growth environments, vacuum, nitrogen gas, and nitrogen plasma, have been used in order to investigate the effect of the ambient on the film quality. Rutherford backscattering spectrometry suggests that the N/Al ratio increases when the AIN film is grown in a nitrogen-contained ambient. Cathodoluminescence study implies the decrease of oxygen content in the film grown in a nitrogen plasma ambient.

Heteroepitaxial growth of highly conductive metal oxide RuO2 thin films by pulsed laser deposition

1995 ◽  
Vol 67 (12) ◽  
pp. 1677-1679 ◽  
Author(s):  
Q. X. Jia ◽  
X. D. Wu ◽  
S. R. Foltyn ◽  
A. T. Findikoglu ◽  
P. Tiwari ◽  
...  
Keyword(s):  
Thin Films ◽  
Metal Oxide ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Heteroepitaxial Growth

Room-Temperature Heteroepitaxial Growth of NiO Thin Films using Pulsed Laser Deposition

2000 ◽  
Vol 39 (Part 1, No. 4A) ◽  
pp. 1817-1820 ◽  
Author(s):  
Minoru Tachiki ◽  
Takeshi Hosomi ◽  
Takeshi Kobayashi
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Heteroepitaxial Growth

Growth of AIN thin films on (111) and (100) silicon by pulsed laser deposition in nitrogen plasma ambient

1997 ◽  
Vol 6 (8) ◽  
pp. 1015-1018 ◽  
Author(s):  
Tetsuya Ogawa ◽  
Mitsuo Okamoto ◽  
Yap Yoke Khin ◽  
Yusuke Mori ◽  
Akimitsu Hatta ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Nitrogen Plasma ◽  
Laser Deposition

Observation of zincblend phase in InN thin films grown on sapphire by nitrogen plasma-assisted pulsed laser deposition

2002 ◽  
Vol 236 (1-3) ◽  
pp. 5-9 ◽  
Author(s):  
P Bhattacharya ◽  
T.K Sharma ◽  
S Singh ◽  
A Ingale ◽  
L.M Kukreja
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Nitrogen Plasma ◽  
Laser Deposition
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