scholarly journals Stabilization and heteroepitaxial growth of metastable tetragonal FeS thin films by pulsed laser deposition

2019 ◽  
Vol 32 (5) ◽  
pp. 054002 ◽  
Author(s):  
Kota Hanzawa ◽  
Masato Sasase ◽  
Hidenori Hiramatsu ◽  
Hideo Hosono
1995 ◽  
Vol 401 ◽  
Author(s):  
J. S. Yeo ◽  
K. E. Youden ◽  
T. F. Huang ◽  
L. Hesselink ◽  
J. S. Harris

AbstractEpitaxial SBN:61 films have been grown on SBN:75 and MgO substrates by pulsed laser deposition. The optical loss due to absorption is greatly reduced by increasing the oxygen pressure to 1 mbar during the cooling process. In homoepitaxy, X-ray phi scans on the (221) plane of the SBN:61 films indicate that the in-plane grains are rotated 0° or ±28° with respect to single crystalline SBN:75 substrates. Cross-section and plane view high resolution TEM reveals this crystalline relations and microstructure of SBN thin films. Pr doped SBN:61 thin films show sharp transition band at 495 nm and 607 nm in room temperature photoluminescence measurement.


1995 ◽  
Vol 67 (12) ◽  
pp. 1677-1679 ◽  
Author(s):  
Q. X. Jia ◽  
X. D. Wu ◽  
S. R. Foltyn ◽  
A. T. Findikoglu ◽  
P. Tiwari ◽  
...  

2000 ◽  
Vol 39 (Part 1, No. 4A) ◽  
pp. 1817-1820 ◽  
Author(s):  
Minoru Tachiki ◽  
Takeshi Hosomi ◽  
Takeshi Kobayashi

CrystEngComm ◽  
2021 ◽  
Author(s):  
Naoki Sannodo ◽  
Asuka Osumi ◽  
Kenichi Kaminaga ◽  
Shingo Maruyama ◽  
Yuji Matsumoto

We employ our pulsed laser deposition system with rapid beam deflection to demonstrate the heteroepitaxial growth of 3C–SiC thin films by a vapour–liquid–solid-like mechanism by alternating deposition of SiC and NiSi2 flux in nanoscale.


2013 ◽  
Vol 14 (1) ◽  
pp. 87-90 ◽  
Author(s):  
Daichi Oka ◽  
Yasushi Hirose ◽  
Tomoteru Fukumura ◽  
Tetsuya Hasegawa

1999 ◽  
Vol 352 (1-2) ◽  
pp. 66-72 ◽  
Author(s):  
L'H Hamedi ◽  
M Guilloux-Viry ◽  
A Perrin ◽  
G Garry

Sign in / Sign up

Export Citation Format

Share Document