Vibrational relaxation and photochemistry studied by photoluminescence excitation spectroscopy in low temperature matrices. I. Cyclic ketones

1976 ◽  
Vol 80 (3) ◽  
pp. 244-247 ◽  
Author(s):  
Luisa T. Molina ◽  
Edward K. C. Lee
Keyword(s):  
Low Temperature ◽  
Vibrational Relaxation ◽  
Photoluminescence Excitation ◽  
Cyclic Ketones

Low temperature vibrational relaxation of OD in the A2Σ, state

2001 ◽  
Vol 99 (14) ◽  
pp. 1193-1198
Author(s):  
DANIEL A. STEINHURST ◽  
JEAN-LUC LE GARREC ◽  
MICHAEL M. AHERN ◽  
MARK A. SMITH
Keyword(s):  
Low Temperature ◽  
Vibrational Relaxation

scholarly journals Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature

1997 ◽  
Vol 2 ◽  
Author(s):  
C. Guénaud ◽  
E. Deleporte ◽  
M. Voos ◽  
C. Delalande ◽  
B. Beaumont ◽  
...  
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Thin Layers ◽  
Photoluminescence Excitation ◽  
Temperature Dependent ◽  
Electron Hole ◽  
Yellow Band ◽  
Neutral Donor ◽  
Photoluminescence Line ◽  
Temperature Dependent Photoluminescence

We report on photoluminescence and photoluminescence excitation experiments performed on hexagonal GaN layers grown on a Sapphire substrate. Information about extrinsic and intrinsic optical properties have been obtained. We show that, at low temperature, the fundamental A excitons are preferentially involved in the relaxation towards the neutral donor bound exciton photoluminescence line, while electron-hole pairs rather participate in the relaxation towards D0−A0 emission and the yellow band. The relaxation from the A exciton towards the yellow band and D0−A0 emission is made easier by temperature. The band structure of the GaN layers has been determined from temperature dependent photoluminescence excitation spectroscopy: A and C excitons and A continuum band gap have been identified up to 210K.

Significant blue-shift in photoluminescence excitation spectra of Nd3+:LaF3 potential laser medium at low-temperature

2015 ◽  
Vol 47 ◽  
pp. 462-464 ◽  
Author(s):  
Ren Arita ◽  
Yuki Minami ◽  
Marilou Cadatal-Raduban ◽  
Minh Hong Pham ◽  
Melvin John Fernandez Empizo ◽  
...  
Keyword(s):  
Low Temperature ◽  
Blue Shift ◽  
Laser Medium ◽  
Photoluminescence Excitation ◽  
Excitation Spectra ◽  
Significant Blue Shift

Energy Up-Conversion at GaAs-GaInP2 and GaAs-AlGaInP2 Interfaces Caused by Cold Auger Processes

1995 ◽  
Vol 417 ◽  
Author(s):  
F. A. J. M. Driessen ◽  
H. M. Cheong ◽  
A. Mascarehas
Keyword(s):  
Low Temperature ◽  
Excitation Energy ◽  
Band Gap ◽  
Nonlinear Effect ◽  
Linear Process ◽  
Type I ◽  
Photoluminescence Excitation ◽  
Cw Laser ◽  
Ordered Alloys ◽  
High Band

AbstractEfficient, low-temperature luminescence at energies far above that of the exciting cw-laser is reported at junctions of GaAs-GaInP2 and GaAs-AlxGa1−x.InP2. The signal originates from the high-band gap layers and disappears only if the excitation energy is tuned below the GaAs band gap, as monitored by up-converted photoluminescence excitation spectroscopy. This shows that the non-linear process is induced by the generation of electrons and holes in the GaAs. Furthermore, it is found that the up-conversion is only observed if the (A1)GaInP2 layers are CuPtB long-range ordered. The reason for this is the inherent presence of metastable states in these ordered alloys. It is argued that cold Auger processes cause the nonlinear effect at these type I interfaces.

Radiative Recombination in the Cu(In,Ga)Se2 Thin Films Irradiated with Hydrogen Ions

2019 ◽  
Vol 18 (03n04) ◽  
pp. 1940033
Author(s):  
O. Borodavchenko ◽  
V. Zhivulko ◽  
M. Yakushev ◽  
M. Sulimov
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Solid Solutions ◽  
Radiative Recombination ◽  
Energy Levels ◽  
Hydrogen Ions ◽  
Photoluminescence Excitation ◽  
Photoluminescence Spectra ◽  
Induced Defects ◽  
Irradiation Induced Defects

The irradiation-induced effects in Cu(In,Ca)Se2 thin films after irradiation with hydrogen ions with dose of [Formula: see text][Formula: see text]cm[Formula: see text] and different energies in the range of 2.5–10[Formula: see text]keV were studied. Irradiated and nonirradiated thin films were investigated by low-temperature (4.2[Formula: see text]K) photoluminescence and photoluminescence excitation methods. The appearance of intense bands at [Formula: see text][Formula: see text]eV and 0.77[Formula: see text]eV in the photoluminescence spectra may be related to radiative recombination on the irradiation-induced defects with deep energy levels in the bandgap of Cu(In,Ca)Se2 solid solutions. A possible nature of these defects and process of radiative recombination are discussed.

Heterogeneous Strain Relaxation in GaAs on Si (100)

1988 ◽  
Vol 116 ◽  
Author(s):  
A. Freundlich ◽  
G. Neu ◽  
A. Leycuras ◽  
R. Carles ◽  
C. Verie
Keyword(s):  
Residual Stress ◽  
Low Temperature ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Photoluminescence Excitation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Low Temperature Photoluminescence ◽  
Epilayer Surface

AbstractResidual stress in MOVPE grown GaAs on (100)Si substrates is investigated using Haman spectroscopy, X-ray diffraction, low temperature photoluminescence and photoluminescence excitation spectroscopy experiments. At room temperature, 2 µm-thick GaAs/Si is found to be under biaxial (100) tensile stress of X = 1.8 ± 0.3 kbar, near the epilayer surface. The stress magnitude decreases as the distance from interface decreases. PL and PLE studies on post-growth thermally annealed GaAs/Si reveal coexistence of unstrained and strained GaAs.

scholarly journals Low-temperature technology and physical processes in green thin-film phosphor Zn2GeO4-Mn

2001 ◽  
Vol 667 ◽  
Author(s):  
V. Bondar ◽  
S. Popovich ◽  
T. Felter ◽  
J. Wager
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Esr Spectra ◽  
Photoluminescence Excitation ◽  
Manganese Ions ◽  
Physical Processes ◽  
Excitation Spectra ◽  
Lower Temperature ◽  
Electro Luminescence

ABSTRACTThin-film Zn2GeO4:Mn phosphors with lower temperature of crystallization and potentially compatible with industrial technologies were investigated. The technology of thin films synthesis has been developed and their structure and crystal parameters have been investigated. Photoluminescence excitation spectra, photoconductivity, temperature dependencies and ESR-spectra of manganese ions were studied. A mechanism for luminescence in this phosphor has been proposed. Results are presented of cathodo- and electro-luminescence of thin film structures of Zn2GeO4:Mn.

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