Nanoparticles and Thin Film Formation in Ultrashort Pulsed Laser Deposition of Vanadium Oxide†

Mg2Si thin film on Si(100) substrate was obtained by pulsed laser deposition. Effects of the annealing procedure on the growth of Mg2Si film were discussed. X-ray, atomic force microscopy (AFM) and field-emission scanning electron microscopy (FESEM) were applied for the phase and microstructure of the obtained Mg2Si film. The results revealed that the annealing procedure was very important for the crystallization of Mg2Si thin film. The Ar partial pressure of 10Pa, temperature of 500°C and time of 30min for annealing were the optimal annealing parameters for Mg2Si thin film formation. Furthermore, electrical properties of the obtained Mg2Si thin film were detected. The results showed that the maximal resistivity of Mg2Si thin film was 7Ω·cm within the temperature range of 110~230°C. And the resistivity gradually decreased with the increase of temperature, which was the characteristic behaviour of a semiconductor. Carrier concentration of the film was negative in the temperature range of testing, showing Mg2Si thin film as n-type semiconductor.

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P-type amorphous vanadium oxide thin film fabricated by pulsed laser deposition

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/ab9ef7 ◽

2020 ◽

Vol 59 (7) ◽

pp. 078004

Author(s):

Subaru Nakanishi ◽

Yoshiharu Shinozaki ◽

Satoru Kaneko ◽

Akifumi Matsuda ◽

Mamoru Yoshimoto

Keyword(s):

Thin Film ◽

Vanadium Oxide ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Oxide Thin Film ◽

Vanadium Oxide Thin Film ◽

P Type

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Nano-Polycrystalline Vanadium Oxide Thin Films Prepared by Pulsed Laser Deposition

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2008.18290 ◽

2008 ◽

Vol 8 (5) ◽

pp. 2604-2608 ◽

Cited By ~ 1

Author(s):

Y. L. Wang ◽

M. C. Li ◽

X. K. Chen ◽

G. Wu ◽

J. P. Yang ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Substrate Temperature ◽

Vanadium Oxide ◽

Pulsed Laser Deposition ◽

Oxygen Pressure ◽

Pulsed Laser ◽

Laser Deposition ◽

Oxide Thin Films ◽

Vanadium Oxide Thin Films

Nano-polycrystalline vanadium oxide thin films have been successfully produced by pulsed laser deposition on Si(100) substrates using a pure vanadium target in an oxygen atmosphere. The vanadium oxide thin film is amorphous when deposited at relatively low substrate temperature (500 °C) and enhancing substrate temperature (600–800 °C) appears to be efficient in crystallizing VOx thin films. Nano-polycrystalline V3O7 thin film has been achieved when deposited at oxygen pressure of 8 Pa and substrate temperature of 600 °C. Nano-polycrystalline VO2 thin films with a preferred (011) orientation have been obtained when deposited at oxygen pressure of 0.8 Pa and substrate temperatures of 600–800 °C. The vanadium oxide thin films deposited at high oxygen pressure (8 Pa) reveal a mix-valence of V5+ and V4+, while the VOx thin films deposited at low oxygen pressure (0.8 Pa) display a valence of V4+. The nano-polycrystalline vanadium oxide thin films prepared by pulsed laser deposition have smooth surface with high qualities of mean crystallite size ranging from 30 to 230 nm and Ra ranging from 1.5 to 22.2 nm. Relative low substrate temperature and oxygen pressure are benifit to aquire nano-polycrystalline VOx thin films with small grain size and low surface roughness.

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