Thermionic Emission and Tunneling at Carbon Nanotube–Organic Semiconductor Interface

ACS Nano ◽  
2012 ◽  
Vol 6 (6) ◽  
pp. 4993-4999 ◽  
Author(s):  
Biddut K. Sarker ◽  
Saiful I. Khondaker
Keyword(s):  
Carbon Nanotube ◽  
Organic Semiconductor ◽  
Thermionic Emission ◽  
Semiconductor Interface

Interfacial Energy Level Alignment at Acid Oxidized Carbon Nanotube - Triphenyldiamine Contacts

2010 ◽  
Vol 1258 ◽  
Author(s):  
Li Wei Tan ◽  
Ross A. Hatton ◽  
Cristina E. Giusca ◽  
Ravi Silva
Keyword(s):  
Carbon Nanotube ◽  
Organic Semiconductor ◽  
Photoelectron Spectroscopy ◽  
Time Frame ◽  
Spectroscopy Study ◽  
Semiconductor Interface ◽  
Dipole Layer ◽  
Oxidized Carbon ◽  
The Difference ◽  
Electrical Equilibrium

AbstractWe report an ultraviolet photoelectron spectroscopy study of the energetics at the interface between acid oxidised carbon nanotubes and the archetypical molecular N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'biphenyl-4,4'diamine(TPD). Electrical equilibrium is achieved across both interfaces within the experiment time frame due to the formation of an interfacial dipole layer which abruptly shifts the vacuum level at the interface. To the authors knowledge this is the first reported measurement of the electronic structure of a carbon nanotube / organic semiconductor interface; a system in which the magnitude of the dipole layer formed at the interface upon contact formation is proportional to the difference in work function between the substrate and organic semiconductor overlayer.

scholarly journals Direct Observation of Entropy-Driven Electron-Hole Pair Separation at an Organic Semiconductor Interface

2015 ◽  
Vol 114 (24) ◽  
Author(s):  
Nicholas R. Monahan ◽  
Kristopher W. Williams ◽  
Bharat Kumar ◽  
Colin Nuckolls ◽  
X.-Y. Zhu
Keyword(s):  
Direct Observation ◽  
Organic Semiconductor ◽  
Hole Pair ◽  
Electron Hole ◽  
Semiconductor Interface ◽  
Pair Separation ◽  
Electron Hole Pair

Impact of surface states and bulk doping level on hybrid inorganic/organic semiconductor interface energy levels

2018 ◽  
Vol 123 (24) ◽  
pp. 245501 ◽  
Author(s):  
T. Schultz ◽  
J. Niederhausen ◽  
R. Schlesinger ◽  
S. Sadofev ◽  
N. Koch
Keyword(s):  
Organic Semiconductor ◽  
Doping Level ◽  
Energy Levels ◽  
Surface States ◽  
Interface Energy ◽  
Semiconductor Interface

The role of charge transfer at reduced graphene oxide/organic semiconductor interface on the charge transport properties

2020 ◽  
Vol 77 ◽  
pp. 105499 ◽  
Author(s):  
Srinivasa Rao Pathipati ◽  
Egon Pavlica ◽  
Emanuele Treossi ◽  
Vincenzo Palermo ◽  
Gvido Bratina
Keyword(s):  
Graphene Oxide ◽  
Charge Transfer ◽  
Charge Transport ◽  
Transport Properties ◽  
Reduced Graphene Oxide ◽  
Organic Semiconductor ◽  
Semiconductor Interface ◽  
Reduced Graphene

TEMPERATURE DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF Cr/p–Si(100) SCHOTTKY BARRIER DIODES

2008 ◽  
Vol 22 (14) ◽  
pp. 2309-2319 ◽  
Author(s):  
K. ERTURK ◽  
M. C. HACIISMAILOGLU ◽  
Y. BEKTORE ◽  
M. AHMETOGLU
Keyword(s):  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Thermionic Emission ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
Semiconductor Interface ◽  
Linear Portion ◽  
Barrier Heights ◽  
P Type

The electrical characteristics of Cr / p – Si (100) Schottky barrier diodes have been measured in the temperature range of 100–300 K. The I-V analysis based on thermionic emission (TE) theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperature. The conventional Richardson plot exhibits non-linearity below 200 K with the linear portion corresponding to activation energy 0.304 eV and Richardson constant (A*) value of 5.41×10-3 Acm-2 K -2 is determined from the intercept at the ordinate of this experimental plot, which is much lower than the known value of 32 Acm-2 K -2 for p-type Si . It is demonstrated that these anomalies result due to the barrier height inhomogeneities prevailing at the metal-semiconductor interface. Hence, it has been concluded that the temperature dependence of the I-V characteristics of the Cr/p – Si Schottky barrier diode can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights. Furthermore, the value of the Richardson constant found is much closer than that obtained without considering the inhomogeneous barrier heights.

scholarly journals Electro-optical interfacial effects on a graphene/π-conjugated organic semiconductor hybrid system

2018 ◽  
Vol 9 ◽  
pp. 963-974 ◽  
Author(s):  
Karolline A S Araujo ◽  
Luiz A Cury ◽  
Matheus J S Matos ◽  
Thales F D Fernandes ◽  
Luiz G Cançado ◽  
...  
Keyword(s):  
Hybrid System ◽  
Organic Semiconductor ◽  
Optical Emission ◽  
Optical Excitation ◽  
Kelvin Probe ◽  
Self Assembled Monolayer ◽  
Semiconductor Interface ◽  
Probe Microscopy ◽  
Kelvin Probe Microscopy ◽  
Force Microscopy

The influence of graphene and retinoic acid (RA) – a π-conjugated organic semiconductor – interface on their hybrid system is investigated. The physical properties of the interface are assessed via scanning probe microscopy, optical spectroscopy (photoluminescence and Raman) and ab initio calculations. The graphene/RA interaction induces the formation of a well-organized π-conjugated self-assembled monolayer (SAM) at the interface. Such structural organization leads to the high optical emission efficiency of the RA SAM, even at room temperature. Additionally, photo-assisted electrical force microscopy, photo-assisted scanning Kelvin probe microscopy and Raman spectroscopy indicate a RA-induced graphene doping and photo-charge generation. Finally, the optical excitation of the RA monolayer generates surface potential changes on the hybrid system. In summary, interface-induced organized structures atop 2D materials may have an important impact on both design and operation of π-conjugated nanomaterial-based hybrid systems.

Organic semiconductor-carbon nanotube bundle bilayer field effect transistors with enhanced mobilities and high on/off ratios

2008 ◽  
Vol 92 (5) ◽  
pp. 053306 ◽  
Author(s):  
Shuhong Liu ◽  
Stefan C. B. Mannsfeld ◽  
Melbs C. LeMieux ◽  
Hang W. Lee ◽  
Zhenan Bao
Keyword(s):  
Carbon Nanotube ◽  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Nanotube Bundle

The Calculation of Transmission Coefficients at Heterogeneous Semiconductor Interfaces: A Case Study Based on the n-InP | poly(pyrrole) Interface

2001 ◽  
Vol 679 ◽  
Author(s):  
Carrie Daniels-Hafer ◽  
Meehae Jang ◽  
Frank E. Jones ◽  
Shannon W. Boettcher ◽  
Rob Danner ◽  
...  
Keyword(s):  
Ideality Factor ◽  
Thermionic Emission ◽  
Anomalous Behavior ◽  
Semiconductor Interface ◽  
Transmission Coefficients ◽  
Semiconductor Interfaces ◽  
Capacitance Voltage ◽  
Voltage Dependent ◽  
Barrier Distribution

ABSTRACTThe n-InP | poly(pyrrole) interface is used as a case study to discuss the calculation of the transmission coefficient, describing the probability of majority carrier transfer, at a non-ideal semiconductor interface exhibiting anomalous behavior assumed to be due to a spatial distribution of barrier heights. The most notable anomaly is a weaker dependence of current on voltage than predicted by thermionic emission (i.e. quality or ideality factor greater than unity). Central to this discussion is the calculation of the equilibrium exchange current density Jo and barrier height Φb in light of a heterogeneous and potentially voltage-dependent barrier distribution. Various approaches to the measurement of Φb and Jovalid for semiconductor interfaces characterized by a uniform, voltage- and temperature-independent barrier are discussed when applied to a heterogeneous interface. In particular, the use of a capacitance-voltage measured barrier is demonstrated to result in an overestimation of κ whereas the use of a Richardson plot barrier is demonstrated to result in an underestimation. Depending on method, errors in excess of five orders-of-magnitude are observed for the n-InP | poly(pyrrole) interface under conditions where it exhibits only mildly anomalous behavior (ideality factor ≍ 1.2). The greatest confidence in the transmission coefficients occurs when the ideality factor is unity and the capacitance-voltage barrier agrees with the Richardson Plot barrier.

Analysis of temperature-dependent Schottky barrier parameters of Cu–Au Schottky contacts to n-InP

2012 ◽  
Vol 90 (1) ◽  
pp. 73-81 ◽  
Author(s):  
V. Lakshmi Devi ◽  
I. Jyothi ◽  
V. Rajagopal Reddy
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Gaussian Distribution ◽  
Ideality Factor ◽  
Thermionic Emission ◽  
Schottky Contacts ◽  
Temperature Dependent ◽  
Semiconductor Interface ◽  
Zero Bias ◽  
Barrier Heights

In this work, we have investigated the electrical characteristics of Au–Cu–n-InP Schottky contacts by current–voltage (I–V) and capacitance–voltage (C–V) measurements in the temperature range 260–420 K in steps of 20 K. The diode parameters, such as the ideality factor, n, and zero-bias barrier height, Φb0, have been found to be strongly temperature dependent. It has been found that the zero-bias barrier height, Φb0(I–V), increases and the ideality factor, n, decreases with an increase in temperature. The forward I–V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the assumption of gaussian distribution of barrier heights, due to barrier inhomogeneities that prevail at the metal–semiconductor interface. The zero-bias barrier height Φb0 versus 1/2kT plot has been drawn to obtain the evidence of a gaussian distribution of the barrier heights. The corresponding values are Φb0 = 1.16 eV and σ0 = 159 meV for the mean barrier height and standard deviation, respectively. The modified Richardson plot has given mean barrier height, Φb0, and Richardson constant, A**, as 1.15 eV and 7.34 Acm−2K−2, respectively, which is close to the theoretical value of 9.4 Acm−2K−2. Barrier heights obtained from C–V measurements are higher than those obtained from I–V measurements. This inconsistency between Schottky barrier heights (SBHs) obtained from I–V and C–V measurements was also interpreted. The temperature dependence of the I–V characteristics of the Au–Cu–n-InP Schottky diode has been explained on the basis of TE mechanism with gaussian distribution of the SBHs.

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