scholarly journals Electro-optical interfacial effects on a graphene/π-conjugated organic semiconductor hybrid system

2018 ◽  
Vol 9 ◽  
pp. 963-974 ◽  
Author(s):  
Karolline A S Araujo ◽  
Luiz A Cury ◽  
Matheus J S Matos ◽  
Thales F D Fernandes ◽  
Luiz G Cançado ◽  
...  
Keyword(s):  
Hybrid System ◽  
Organic Semiconductor ◽  
Optical Emission ◽  
Optical Excitation ◽  
Kelvin Probe ◽  
Self Assembled Monolayer ◽  
Semiconductor Interface ◽  
Probe Microscopy ◽  
Kelvin Probe Microscopy ◽  
Force Microscopy

The influence of graphene and retinoic acid (RA) – a π-conjugated organic semiconductor – interface on their hybrid system is investigated. The physical properties of the interface are assessed via scanning probe microscopy, optical spectroscopy (photoluminescence and Raman) and ab initio calculations. The graphene/RA interaction induces the formation of a well-organized π-conjugated self-assembled monolayer (SAM) at the interface. Such structural organization leads to the high optical emission efficiency of the RA SAM, even at room temperature. Additionally, photo-assisted electrical force microscopy, photo-assisted scanning Kelvin probe microscopy and Raman spectroscopy indicate a RA-induced graphene doping and photo-charge generation. Finally, the optical excitation of the RA monolayer generates surface potential changes on the hybrid system. In summary, interface-induced organized structures atop 2D materials may have an important impact on both design and operation of π-conjugated nanomaterial-based hybrid systems.

Determination of the Physical Properties of Oil Sands Components using Scanning Probe Microscopy

2015 ◽  
Vol 1754 ◽  
pp. 69-74
Author(s):  
Ravi Gaikwad ◽  
Tinu Abraham ◽  
Aharnish Hande ◽  
Fatemeh Bakhtiari ◽  
Siddhartha Das ◽  
...  
Keyword(s):  
Oil Sands ◽  
Structural Changes ◽  
Rational Approach ◽  
Kelvin Probe ◽  
Scanning Calorimetry ◽  
Probe Microscopy ◽  
Kelvin Probe Microscopy ◽  
Force Microscopy ◽  
Atomic Force

ABSTRACTAtomic force microscopy is employed to study the structural changes in the morphology and physical characteristics of asphaltene aggregates as a function of temperature. The exotic fractal structure obtained by evaporation-driven asphaltene aggregates shows an interesting dynamics for a large range of temperatures from 25°C to 80°C. The changes in the topography, surface potential and adhesion are unnoticeable until 70°C. However, a significant change in the dynamics and material properties is displayed in the range of 70°C - 80°C, during which the aspahltene aggregates acquire ‘liquid-like’ mobility and fuse together. This behaviour is attributed to the transition from the pure amorphous phase to a crystalline liquid phase which occurs at approximately 70°C as shown by using Differential Scanning Calorimetry (DSC). Additionally, the charged nature of asphaltenes and bitumen is also explored using kelvin probe microscopy. Such observations can lead to the development of a rational approach to the fundamental understanding of asphaltene aggregation dynamics and may help in devising novel techniques for the handling and separation of asphaltene aggregates using dielectrophoretic methods.

EEPROM Failure Analysis Methodology : Can Programmed Charges be Measured Directly by Electrical Techniques of Scanning Probe Microscopy (SPM)?

2005 ◽  
Author(s):  
Christophe De Nardi ◽  
Romain Desplats ◽  
Philippe Perdu ◽  
Félix Beaudoin ◽  
Jean Luc Gauffier
Keyword(s):  
Scanning Probe Microscopy ◽  
Floating Gate ◽  
Scanning Probe ◽  
Kelvin Probe ◽  
Oxide Interfaces ◽  
Probe Microscopy ◽  
Kelvin Probe Microscopy ◽  
Force Microscopy ◽  
Analysis Methodology ◽  
Electric Force Microscopy

Abstract A method to measure “on site” programmed charges in EEPROM devices is presented. Electrical Scanning Probe Microscopy (SPM) based techniques such as Electric Force Microscopy (EFM) and Scanning Kelvin Probe Microscopy (SKPM) are used to directly probe floating gate potentials. Both preparation and probing methods are discussed. Sample preparation to access floating gate/oxide interfaces at a few nanometers distance without discharging the gate proves to be the key problem, more than the probing technique itself. Applications are demonstrated on 128 kbit EEPROMs from ST Microelectronics and 64 kbit EEPROMs from Atmel.

Characterization of GaN and Al0.35Ga0.65N/GaN Heterostructures by Scanning Kelvin Probe Microscopy

2001 ◽  
Vol 680 ◽  
Author(s):  
G. Koley ◽  
M. G. Spencer
Keyword(s):  
Chemical Vapor ◽  
Kelvin Probe ◽  
Contact Mode ◽  
Probe Microscopy ◽  
Kelvin Probe Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Scanning Kelvin Probe ◽  
Gan Heterostructure ◽  
Growth Features

ABSTRACTScanning Kelvin probe microscopy (SKPM) technique operated in feedback mode has been used to characterize GaN (unintentionally n-type doped, n+ doped and semi-insulating), and Al0.35Ga0.65N/GaN heterostructures (with varying Al0.35Ga0.65N thickness) grown by metalorganic chemical vapor deposition and molecular beam epitaxy. SKPM was used to measure the surface potential on these materials. The measurement technique was calibrated using metal calibration samples of Pt, Au, Ni and Al. The BSBH for n-doped GaN was measured to be 0.7 eV, which is in good agreement with values reported in the literature. Growth features such as dislocations present on the surfaces of III-nitrides were also investigated for their electrical properties using SKPM and non-contact mode atomic force microscopy, simultaneously. The dislocations have been found to be negatively charged for GaN as well as Al0.35Ga0.65N/GaN heterostructure samples.

scholarly journals Scanning Kelvin Probe Microscopy Reveals Planar Defects Are Sources of Electronic Disorder in Organic Semiconductor Crystals

2017 ◽  
Vol 3 (7) ◽  
pp. 1700117 ◽  
Author(s):  
Yanfei Wu ◽  
Xinglong Ren ◽  
Kathryn A. McGarry ◽  
Matthew J. Bruzek ◽  
Christopher J. Douglas ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Kelvin Probe ◽  
Planar Defects ◽  
Probe Microscopy ◽  
Kelvin Probe Microscopy ◽  
Semiconductor Crystals ◽  
Scanning Kelvin Probe

High-sensitivity quantitative Kelvin probe microscopy by noncontact ultra-high-vacuum atomic force microscopy

1999 ◽  
Vol 75 (2) ◽  
pp. 286-288 ◽  
Author(s):  
Ch. Sommerhalter ◽  
Th. W. Matthes ◽  
Th. Glatzel ◽  
A. Jäger-Waldau ◽  
M. Ch. Lux-Steiner
Keyword(s):  
Atomic Force Microscopy ◽  
High Vacuum ◽  
High Sensitivity ◽  
Ultra High Vacuum ◽  
Kelvin Probe ◽  
Probe Microscopy ◽  
Kelvin Probe Microscopy ◽  
Force Microscopy ◽  
Atomic Force

Polarization Effects in Graded AlGaN Nanolayers Revealed by Current-Sensing and Kelvin Probe Microscopy

2018 ◽  
Vol 10 (7) ◽  
pp. 6755-6763 ◽  
Author(s):  
Petro M. Lytvyn ◽  
Andrian V. Kuchuk ◽  
Yuriy I. Mazur ◽  
Chen Li ◽  
Morgan E. Ware ◽  
...  
Keyword(s):  
Kelvin Probe ◽  
Current Sensing ◽  
Polarization Effects ◽  
Probe Microscopy ◽  
Kelvin Probe Microscopy
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