scholarly journals Controllable field-free switching of perpendicular magnetization through bulk spin-orbit torque in symmetry-broken ferromagnetic films

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Xuejie Xie ◽  
Xiaonan Zhao ◽  
Yanan Dong ◽  
Xianlin Qu ◽  
Kun Zheng ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Domain Walls ◽  
Single Layer ◽  
Ferromagnetic Film ◽  
Effective Field ◽  
Composition Gradient ◽  
Spin Orbit ◽  
Interlayer Exchange Coupling ◽  
Magnetization Switching ◽  
Perpendicular Magnetization

AbstractProgrammable magnetic field-free manipulation of perpendicular magnetization switching is essential for the development of ultralow-power spintronic devices. However, the magnetization in a centrosymmetric single-layer ferromagnetic film cannot be switched directly by passing an electrical current in itself. Here, we demonstrate a repeatable bulk spin-orbit torque (SOT) switching of the perpendicularly magnetized CoPt alloy single-layer films by introducing a composition gradient in the thickness direction to break the inversion symmetry. Experimental results reveal that the bulk SOT-induced effective field on the domain walls leads to the domain walls motion and magnetization switching. Moreover, magnetic field-free perpendicular magnetization switching caused by SOT and its switching polarity (clockwise or counterclockwise) can be reversibly controlled in the IrMn/Co/Ru/CoPt heterojunctions based on the exchange bias and interlayer exchange coupling. This unique composition gradient approach accompanied with electrically controllable SOT magnetization switching provides a promising strategy to access energy-efficient control of memory and logic devices.

Interaction of Tops of Domains in Metal Nano of the Film

2019 ◽  
Vol 945 ◽  
pp. 771-775 ◽  
Author(s):  
V.P. Panaetov ◽  
Denis B. Solovev
Keyword(s):  
Magnetic Field ◽  
Experimental Data ◽  
Film Thickness ◽  
Magnetic Structure ◽  
Domain Walls ◽  
Magnetic Moments ◽  
Ferromagnetic Film ◽  
Easy Magnetization ◽  
Electron Transmission ◽  
Transmission Microscope

Ferromagnetic film can be a matrix for recording information with the help of magnetic moments of electrons. The study of the processes of changing the magnetic structure in an electron-transmission microscope makes it possible to investigate micro magnetic phenomena. In this paper, we investigate the interaction between the vertices of neighboring regions. It is shown how the magnetic structure of the vertices of the domains changes as they approach each other with the help of an increasing constant magnetic field applied along the axis of easy magnetization. The distance was measured between the vertices of the domains. The schemes of distribution of the magnetization vectors between interacting vertices are shown. These schemes are made from experimental images of the magnetic structure. The distances between domain vertices and domain walls were compared on the basis of experimental data. The film thickness is 50 nm; the structure is Ni0.83-Fe0.17. The films were obtained by the method proposed by us. From the experimental results it follows that the interaction of the domain walls is observed at a distance of 20 microns and the interaction of the domain vertices is manifested at a distance of 100 μm.

scholarly journals Bulk Spin Torque‐Driven Perpendicular Magnetization Switching in L 1 0 FePt Single Layer

2020 ◽  
Vol 32 (31) ◽  
pp. 2002607 ◽  
Author(s):  
Meng Tang ◽  
Ka Shen ◽  
Shijie Xu ◽  
Huanglin Yang ◽  
Shuai Hu ◽  
...  
Keyword(s):  
Single Layer ◽  
Spin Torque ◽  
Magnetization Switching ◽  
Perpendicular Magnetization

Asymmetric Spin-Orbit-Torque-Induced Magnetization Switching With a Noncollinear In-Plane Assisting Magnetic Field

2019 ◽  
Vol 11 (3) ◽  
Author(s):  
Weijia Fan ◽  
Jie Zhao ◽  
Meng Tang ◽  
Huanjian Chen ◽  
Huanglin Yang ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Spin Orbit ◽  
Magnetization Switching

scholarly journals Spin–orbit torque driven perpendicular magnetization switching in Re/CoFeB/MgO with high thermal stability

APL Materials ◽  
2022 ◽  
Vol 10 (1) ◽  
pp. 011104
Author(s):  
Abhijeet Ranjan ◽  
Chun-Liang Yang ◽  
Chia-Chang Lee ◽  
Rudis Ismael Salinas Padilla ◽  
Chih-Huang Lai
Keyword(s):  
Thermal Stability ◽  
High Thermal Stability ◽  
Spin Orbit ◽  
Magnetization Switching ◽  
Perpendicular Magnetization

Large damping-like spin–orbit torque and perpendicular magnetization switching in sputtered WTex films

2021 ◽  
Vol 118 (4) ◽  
pp. 042401
Author(s):  
Hang Xie ◽  
Abhishek Talapatra ◽  
Xin Chen ◽  
Ziyan Luo ◽  
Yihong Wu
Keyword(s):  
Spin Orbit ◽  
Magnetization Switching ◽  
Perpendicular Magnetization

scholarly journals Competing effect of spin-orbit torque terms on perpendicular magnetization switching in structures with multiple inversion asymmetries

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Guoqiang Yu ◽  
Mustafa Akyol ◽  
Pramey Upadhyaya ◽  
Xiang Li ◽  
Congli He ◽  
...  
Keyword(s):  
Spin Orbit ◽  
Magnetization Switching ◽  
Perpendicular Magnetization

scholarly journals Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Zhenyi Zheng ◽  
Yue Zhang ◽  
Victor Lopez-Dominguez ◽  
Luis Sánchez-Tejerina ◽  
Jiacheng Shi ◽  
...  
Keyword(s):  
Bias Field ◽  
Composition Gradient ◽  
Spin Orbit ◽  
Plane Symmetry ◽  
Micromagnetic Simulations ◽  
Practical Applications ◽  
Spintronic Devices ◽  
Perpendicular Magnetization ◽  
Inversion Asymmetry

AbstractCurrent-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation of in-plane structural asymmetry in the device, both of which can be difficult to implement in practical applications. Here, we report bias-field-free SOT switching in a single perpendicular CoTb layer with an engineered vertical composition gradient. The vertical structural inversion asymmetry induces strong intrinsic SOTs and a gradient-driven Dzyaloshinskii–Moriya interaction (g-DMI), which breaks the in-plane symmetry during the switching process. Micromagnetic simulations are in agreement with experimental results, and elucidate the role of g-DMI in the deterministic switching processes. This bias-field-free switching scheme for perpendicular ferrimagnets with g-DMI provides a strategy for efficient and compact SOT device design.

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