scholarly journals Moisture resistance in perovskite solar cells attributed to a water-splitting layer

2021 ◽  
Vol 2 (1) ◽  
Author(s):  
Min Kim ◽  
Antonio Alfano ◽  
Giovanni Perotto ◽  
Michele Serri ◽  
Nicola Dengo ◽  
...  
Keyword(s):  
Water Splitting ◽  
Water Oxidation ◽  
Perovskite Solar Cells ◽  
Active Species ◽  
Device Performance ◽  
Oxidation Activity ◽  
Semiconducting Polymer ◽  
Moisture Conditions ◽  
P Type ◽  
The Impact

AbstractCommercialization of lead halide perovskite-based devices is hindered by their instability towards environmental conditions. In particular, water promotes fast decomposition, leading to a drastic decrease in device performance. Integrating water-splitting active species within ancillary layers to the perovskite absorber might be a solution to this, as they could convert incoming water into oxygen and hydrogen, preserving device performance. Here, we suggest that a CuSCN nanoplatelete/p-type semiconducting polymer composite, combining hole extraction and transport properties with water oxidation activity, transforms incoming water molecules and triggers the in situ p-doping of the conjugated polymer, improving transport of photocharges. Insertion of the nanocomposite into a lead perovskite solar cell with a direct photovoltaic architecture causes stable device performance for 28 days in high-moisture conditions. Our findings demonstrate that the engineering of a hole extraction layer with possible water-splitting additives could be a viable strategy to reduce the impact of moisture in perovskite devices.

scholarly journals Understanding the Impact of Cu-In-Ga-S Nanoparticles Compactness on Holes Transfer of Perovskite Solar Cells

Nanomaterials ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 286 ◽  
Author(s):  
Dandan Zhao ◽  
Yinghui Wu ◽  
Bao Tu ◽  
Guichuan Xing ◽  
Haifeng Li ◽  
...  
Keyword(s):  
Grain Size ◽  
Solar Cells ◽  
Perovskite Solar Cells ◽  
Transport Layer ◽  
Device Performance ◽  
Device Structure ◽  
Optimal Point ◽  
Hole Transfer ◽  
Coverage Ratio ◽  
The Impact

Although a compact holes-transport-layer (HTL) film has always been deemed mandatory for perovskite solar cells (PSCs), the impact their compactness on the device performance has rarely been studied in detail. In this work, based on a device structure of FTO/CIGS/perovskite/PCBM/ZrAcac/Ag, that effect was systematically investigated with respect to device performance along with photo-physics characterization tools. Depending on spin-coating speed, the grain size and coverage ratio of those CIGS films on FTO substrates can be tuned, and this can result in different hole transfer efficiencies at the anode interface. At a speed of 4000 r.p.m., the band level offset between the perovskite and CIGS modified FTO was reduced to a minimum of 0.02 eV, leading to the best device performance, with conversion efficiency of 15.16% and open-circuit voltage of 1.04 V, along with the suppression of hysteresis. We believe that the balance of grain size and coverage ratio of CIGS interlayers can be tuned to an optimal point in the competition between carrier transport and recombination at the interface based on the proposed mechanism. This paper definitely deepens our understanding of the hole transfer mechanism at the interface of PSC devices, and facilitates future design of high-performance devices.

scholarly journals High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN

Energies ◽  
2021 ◽  
Vol 14 (19) ◽  
pp. 6098
Author(s):  
Gwen Rolland ◽  
Christophe Rodriguez ◽  
Guillaume Gommé ◽  
Abderrahim Boucherif ◽  
Ahmed Chakroun ◽  
...  
Keyword(s):  
High Electron Mobility Transistor ◽  
Device Performance ◽  
High Electron ◽  
Chemical Beam Epitaxy ◽  
High Electron Mobility ◽  
Device Failure ◽  
Gan Hemt ◽  
Silvaco Atlas ◽  
P Type ◽  
The Impact

In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy). The impact of the p doping on the device performance is investigated using TCAD simulator (Silvaco/Atlas). With 4E17 cm−3 p doping, a Vth of 1.5 V is achieved. Four terminal breakdowns of the fabricated device are investigated, and the origin of the device failure is identified.

Synergetic effects of electrochemical oxidation of Spiro-OMeTAD and Li+ ion migration for improving the performance of n–i–p type perovskite solar cells

2021 ◽  
Author(s):  
Changzeng Ding ◽  
Rong Huang ◽  
Christian Ahläng ◽  
Jian Lin ◽  
Lianping Zhang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electrochemical Oxidation ◽  
Perovskite Solar Cells ◽  
Charge Injection ◽  
Device Performance ◽  
Ion Diffusion ◽  
Ion Migration ◽  
Synergetic Effects ◽  
Li Ion ◽  
P Type

Oxidation of solar cells leads to Li+ ion diffusion, which increases the conductivity of the Spiro-OMeTAD layer and the built-in potential within the cells. The synergetic effects improve charge injection at both interfaces and device performance.

Synergistic effects of P-doping and a MnO2 cocatalyst on Fe2O3 nanorod photoanodes for efficient solar water splitting

2018 ◽  
Vol 6 (16) ◽  
pp. 7021-7026 ◽  
Author(s):  
Qiang Rui ◽  
Lei Wang ◽  
Yajun Zhang ◽  
Chenchen Feng ◽  
Beibei Zhang ◽  
...  
Keyword(s):  
Water Splitting ◽  
Oxygen Evolution ◽  
Water Oxidation ◽  
Synergistic Effects ◽  
Oxidation Activity ◽  
Solar Water ◽  
Solar Water Splitting

Herein, we demonstrate that Fe2O3 nanorod photoanodes modified with P-doping and a MnO2 oxygen evolution cocatalyst exhibited a remarkably enhanced PEC water oxidation activity.

The Impact of Fin Number on Device Performance and Reliability for Multi-Fin Tri-Gate n- and p-Type FinFET

2018 ◽  
Vol 18 (4) ◽  
pp. 555-560 ◽  
Author(s):  
Wen-Kuan Yeh ◽  
Wenqi Zhang ◽  
Po-Ying Chen ◽  
Yi-Lin Yang
Keyword(s):  
Device Performance ◽  
P Type ◽  
The Impact

Defective ZnFe2O4 nanorods with oxygen vacancy for photoelectrochemical water splitting

Nanoscale ◽  
2015 ◽  
Vol 7 (45) ◽  
pp. 19144-19151 ◽  
Author(s):  
Ju Hun Kim ◽  
Youn Jeong Jang ◽  
Jin Hyun Kim ◽  
Ji-Wook Jang ◽  
Sun Hee Choi ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Oxygen Vacancy ◽  
Water Splitting ◽  
Water Oxidation ◽  
Oxygen Vacancies ◽  
Electron Donors ◽  
Surface Trap ◽  
Oxidation Activity ◽  
Vacuum Atmosphere ◽  
Photoelectrochemical Water Oxidation

A 1D ZnFe2O4 photoanode is treated under a hydrogen or vacuum atmosphere to improve the photoelectrochemical water oxidation activity up to 20 times. This post-treatment creates oxygen vacancies in the ZnFe2O4 lattice that serve as a source of electron donors and passivates surface trap sites, and as a result improves charge transfer.

scholarly journals Impact of Delay Time before Annealing MAI-PbI2-DMSO Intermediate Phase on Perovskite Film Quality and Photo-Physical Properties

Crystals ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 151 ◽  
Author(s):  
Yujun Yao ◽  
Xiaoping Zou ◽  
Jin Cheng ◽  
Dan Chen ◽  
Chuangchuang Chang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Physical Properties ◽  
Delay Time ◽  
High Performance ◽  
Intermediate Phase ◽  
Perovskite Solar Cells ◽  
Device Performance ◽  
Perovskite Layer ◽  
The Impact

High-performance perovskite solar cells are strongly dependent on the quality of the perovskite layer. Two-step sequential deposition of CH3NH3PbI3 (MAPbI3) films is widely used to fabricate perovskite solar cells and many factors influence the quality of perovskite films, such as the delay time before annealing the MAI-PbI2-DMSO intermediate phase, which would impact the morphology and photo-physical properties of perovskite thin films. Here, the experimental research indicates that the impact of the delay time before annealing the MAI-PbI2-DMSO intermediate phase on the quality, crystallinity, and photo-physical properties of perovskite film is crucial. During the delay process, the delay time before annealing the MAI-PbI2-DMSO intermediate phase plays an important role in the nucleation process of perovskite grains inside the intermediate phase. With the extension of the delay time before annealing, the quality of the perovskite film deteriorates, thus the photo-physical properties change. We found that after the localized liquid–liquid diffusion of MAI and PbI2, with the extension of the delay time before annealing the MAI-PbI2-DMSO intermediate phase, the nucleation number of the perovskite grains increases and the grain size becomes smaller. Therefore, with the extension of the delay time before annealing, the device performance deteriorates.

Sign in / Sign up

Export Citation Format

Share Document