scholarly journals Resistive switching behavior of reduced graphene oxide memory cells for low power nonvolatile device application

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Sangram K. Pradhan ◽  
Bo Xiao ◽  
Saswat Mishra ◽  
Alex Killam ◽  
Aswini K. Pradhan
Keyword(s):  
Graphene Oxide ◽  
Low Power ◽  
Reduced Graphene Oxide ◽  
Resistive Switching ◽  
Switching Behavior ◽  
Memory Cells ◽  
Resistive Switching Behavior ◽  
Device Application ◽  
Reduced Graphene

scholarly journals Low-Power, Large-Area and High-Performance CdSe Quantum Dots/Reduced Graphene Oxide Photodetectors

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 95855-95863
Author(s):  
Yi-Hsiang Shih ◽  
You-Ling Chen ◽  
Jui-Hsin Tan ◽  
Sheng Hsiung Chang ◽  
Wu-Yih Uen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Graphene Oxide ◽  
Low Power ◽  
Reduced Graphene Oxide ◽  
High Performance ◽  
Cdse Quantum Dots ◽  
Large Area ◽  
Reduced Graphene

Role of tantalum nitride as active top electrode in electroforming-free bipolar resistive switching behavior of cerium oxide-based memory cells

2015 ◽  
Vol 583 ◽  
pp. 95-101 ◽  
Author(s):  
Muhammad Ismail ◽  
Ejaz Ahmed ◽  
Anwar Manzoor Rana ◽  
Ijaz Talib ◽  
Tahira Khan ◽  
...  
Keyword(s):  
Cerium Oxide ◽  
Resistive Switching ◽  
Tantalum Nitride ◽  
Switching Behavior ◽  
Memory Cells ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching
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