Deposition Tantalum Nitride on LDX 2101 Duplex Stainless Steel by Reactive Sputtering in Biomedical Applications

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Preparation and Ignition Properties of Tantalum Nitride Thin-Film Energy Transducers

Tantalum nitride (TaN) has excellent electrical properties that can be used as an energy transducer in the ignition field. In this study, TaN film transducers with different bridge parameters were designed and fabricated in an attempt to reduce its energy consumption. The ignition sensitivity of the film transducers was tested using the Langley method. The results revealed that the ignition voltage is the lowest when the thickness of the film is 0.9 µm. If the thickness and length of the bridge film are fixed, the ignition voltage of the transducer first decreases and then increases with the width of the bridge film increases. When the thickness and width of the bridge film are fixed, the ignition voltage of the transducer is first decrease and then increase with the length of the bridge film increases. We also evaluated the ignition mechanism of TaN film transducers. By comparing the performance of TaN, semiconductor bridge (SCB), and nickel–chromium (Ni–Cr) film transducers, the TaN and SCB transducers are proven to have similar ignition performances, which are better than the Ni–Cr transducer. The negative temperature coefficient of TaN and the positive feedback after the initial electrothermal ignition promoted the growth and strengthening of plasma in the bridge film, allowing the medicament to ignite quickly. When the feasibility of the process and the influence of the bridge film parameters on ignition sensitivity are considered, the preferred design parameters of the transducer are a thickness of 0.9 µm and a bridge film size of 0.3 mm×0.3 mm. This study shows that TaN can be utilized as a high-performance transducer.

Properties of plasma enhanced atomic layer deposited ruthenium thin films from Ru(EtCp)2

Ruthenium thin films were deposited by plasma enhanced atomic layer deposition using bis(ethylcyclopentadienyl)ruthenium(II) or Ru(EtCp)2 and oxygen plasma. The growth characteristics have been studied on a silicon substrate with different interfaces in a wide temperature range. On Si and SiO2, a nucleation delay period has been observed, which can be substantially reduced by the use of a tantalum nitride underlayer of ∼ 0.3 nm. The surface analysis shows that the substrate’s temperature strongly affects the composition of the film from ruthenium oxide at low temperatures to pure ruthenium film at higher temperatures.

Investigation of reactively sputtered TaN thin-film resistors for microwave photonic applications

Electrophysical characteristics and their thermal stability of thin-film resistors based on tantalum nitride (TaN) obtained by reactive magnetron sputtering were investigated. The optimal modes of the magnetron sputtering process are determined, ensuring the Ta2N phase film composition with the value of the specific electrical resistance of 250 μm cm and high thermal stability of the parameters. On the basis of the investigations carried out, thin-film matching resistors were manufactured for use as part of an electro-optical InP-based MZ modulator

Effect of Nitrogen Flow Ratio on Degradation Behaviors and Failure of Magnetron Sputter Deposited Tantalum Nitride

A series of Tantalum Nitride (TaN) films under a reactive direct current magnetron sputtering method with a controlled total gas flow rate were prepared on aluminum oxide substrates. To find the nitrogen flow rate, which produced the minimum sheet resistance, TaN films deposited under a nitrogen gas flow ratio of 2.5%, 5%, 10%, 15%, 20%, 25% were characterized in terms of their structural and electrical properties. The optimum total gas flow rate was 60 sccm, revealing the lowest deviation of sheet resistance. Next, the durability and reliability at high temperatures, after heating and cooling cycles and exposure to the induced current, were tested. When the nitrogen flow ratio reaches 2.5%, it gets the maximum for the adhesion force, roughness, and deposition rate of the TaN film, and maximum values are 75.4 N, 1.1 nm, and 3.67 nm/min, respectively, and the sheet resistance of the TaN film reaches a minimum of 20.32 Ω/sq. The degradation behaviors and failure of TaN films were investigated by measuring the sheet resistance variation. To further explain the degradation of TaN films, additional analysis of their crystallinity was conducted. The results showed that TaN-based thin film resistors have high durability and reliability, and are suitable for embedded passive resistors.

Nanomechanical and Nanotribological Properties of Nanostructured Coatings of Tantalum and Its Compounds on Steel Substrates

The present paper addresses the problem of identification of microstructural, nanomechanical, and tribological properties of thin films of tantalum (Ta) and its compounds deposited on stainless steel substrates by direct current magnetron sputtering. The compositions of the obtained nanostructured films were determined by energy dispersive spectroscopy. Surface morphology was investigated using atomic force microscopy (AFM). The coatings were found to be homogeneous and have low roughness values (<10 nm). The values of microhardness and elastic modulus were obtained by means of nanoindentation. Elastic modulus values for all the coatings remained unchanged with different atomic percentage of tantalum in the films. The values of microhardness of the tantalum films were increased after incorporation of the oxygen and nitrogen atoms into the crystal lattice of the coatings. The coefficient of friction, CoF, was determined by the AFM method in the “sliding” and “plowing” modes. Deposition of the coatings on the substrates led to a decrease of CoF for the coating-substrate system compared to the substrates; thus, the final product utilizing such a coating will presumably have a longer service life. The tantalum nitride films were characterized by the smallest values of CoF and specific volumetric wear.