Phase transition and piezoelectricity of sol–gel-processed Sm-doped BiFeO3 thin films on Pt(111)/Ti/SiO2/Si substrates

2015 ◽  
Vol 3 (9) ◽  
pp. 2115-2122 ◽  
Author(s):  
Wei Sun ◽  
Jing-Feng Li ◽  
Qi Yu ◽  
Li-Qian Cheng
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Sol Gel ◽  
Orthorhombic Phase ◽  
High Quality ◽  
Si Substrates ◽  
Bifeo3 Thin Films ◽  
Gel Processing

We prepared high-quality Bi1−xSmxFeO3 films on Pt(111)/Ti/SiO2/Si substrates by sol–gel processing and found rhombohedral–orthorhombic phase transition with enhanced piezoelectricity.

Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi4Ti4O15-Bi4Ti3O12 Thin Films

2011 ◽  
Vol 197-198 ◽  
pp. 1781-1784
Author(s):  
Hua Wang ◽  
Jian Li ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Shang Ju Zhou
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Gel Processing ◽  
Coercive Electric Field ◽  
Clockwise Hysteresis

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.

OPTIMIZATION OF PROCESSING TEMPERATURE TO ACHIEVE HIGH QUALITY SOL–GEL-DERIVED PZT THIN FILM

2009 ◽  
Vol 08 (03) ◽  
pp. 299-303 ◽  
Author(s):  
SAJJAD DEHGHANI ◽  
ABDOLGHAFAR BARZEGAR ◽  
MOHAMMAD HOSSEIN SHEIKHI
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Morphological Properties ◽  
Processing Temperature ◽  
High Quality ◽  
Pzt Thin Films ◽  
Polarization Voltage ◽  
Si Substrates

Ferroelectric PbZr 1-x Ti x O 3 (PZT) thin films have been extensively investigated because of their excellent piezoelectric, pyroelectric, ferroelectric, and dielectric properties. Sol–gel synthesis and spin-coating are popular routes to the formation of high quality, dense, and crack-free thin films. In this work, high quality, crack-free PZT thin films have been prepared by sol–gel method via spin-coating on Pt/Ti/SiO2/Si substrate by different temperature processings. The crystallographic and morphological properties of the films have been analyzed by X-ray diffraction and scanning electron microscopy. The electrical properties of thin films including the permittivity, loss tangent, and polarization–voltage hysteresis loop were measured and compared for different films. Finally, by optimizing temperature processing, highly textured and high quality films of PZT with perovskite phase were obtained on Pt/Ti/SiO2/Si substrates.

Thin films of LiNb 0.5 Ta 0.5 O 3 prepared on SiO 2 /Si substrates by sol-gel processing

1999 ◽  
Author(s):  
Shi De Cheng ◽  
Chan Hin Kam ◽  
Yan Zhou ◽  
Yee Loy Lam ◽  
Yuen Chuen Chan ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Si Substrates ◽  
Gel Processing

MAGNETIC AND STRUCTURAL TRANSITION PROPERTIES OF NIOBIUM-DOPED BiFeO3 THIN FILMS

2013 ◽  
Vol 27 (15) ◽  
pp. 1362003 ◽  
Author(s):  
H. Z. CHEN ◽  
M. C. KAO ◽  
S. L. YOUNG
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Structural Transition ◽  
Spontaneous Magnetization ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Bifeo3 Thin Films ◽  
Niobium Doped ◽  
Nb Content ◽  
Nb Doping

Niobium-substituted BiFeO 3( BiFe 1-x Nb x O 3 BFNO ) thin films were successfully deposited on Pt(111)/Ti/SiO2/Si(100) substrates by spin coating with a sol–gel technology and rapid thermal annealing. The effects of Nb content (x = 0~0.08) on the microstructure, magnetic and multiferroic properties of thin films were investigated. The result of X-ray diffraction analysis shows that the BFNO thin films have rhombohedral (R3c) to tetragonal (P4mm) phase transition at x = 0.06. The Nb doping in the B-site of BiFeO 3 could induce the appearance of the spontaneous magnetization and polarization by the phase transition of rhombohedral-to-tetragonal. The BFNO thin films with x = 0.06 exhibits the maximum remanent magnetization (2Mr) of 5.2 emu/g.

Macroscopic and local approaches of phase transition in sol–gel synthesized (Bi0.5Na0.5)TiO3–SrTiO3thin films

2018 ◽  
Vol 20 (22) ◽  
pp. 15236-15243 ◽  
Author(s):  
Hyun-Young Lee ◽  
Jin Luo ◽  
Zhen Zhou ◽  
Wei Sun ◽  
Jing-Feng Li
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Sol Gel ◽  
Lead Free ◽  
High Quality ◽  
Gel Method ◽  
Sol Gel Method ◽  
Piezoelectric Thin Films

High-quality (1 −x)(Bi0.5Na0.5)TiO3–xSrTiO3lead-free piezoelectric thin films (x= 0, 0.1, and 0.25) on Pt(111)/Ti/SiO2/Si(100) substrates were prepared by a sol–gel method.

Sol–gel-processed (001)-textured BiFeO3 thin films on Pt(111)/Ti/SiO2/Si substrates with PbO seeding nanocrystals

RSC Advances ◽  
2016 ◽  
Vol 6 (1) ◽  
pp. 489-494 ◽  
Author(s):  
Wei Sun ◽  
Zhen Zhou ◽  
Jing-Feng Li
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Layer By Layer ◽  
Si Substrates ◽  
Bifeo3 Thin Films ◽  
Annealing Method

Highly (001)-oriented BiFeO3 thin films were grown on Pt(111)/Ti/SiO2/Si substrates with PbO seeding nanocrystals by a layer-by-layer annealing method.

Characteristics of Intergrown Superlattice Bismuth-Layered-Structure Ferroelectrics Thin Films Prepared by Sol-Gel Method

2011 ◽  
Vol 197-198 ◽  
pp. 503-506
Author(s):  
Hua Wang ◽  
Jian Li ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Ming Fang Ren
Keyword(s):  
Thin Films ◽  
Hysteresis Loop ◽  
Layered Structure ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Ferroelectric Thin Films ◽  
Memory Window ◽  
Si Substrates ◽  
Fatigue Endurance ◽  
Gel Processing

Intergrown superlattice Bi3TiNbO9–Bi4Ti3O12(BTN–BIT) and SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) ferroelectric thin films have been prepared on p-Si substrates by sol-gel processing. The precursor thin films are crystallized in the desired intergrown superlattice BTN–BIT and SBT–BIT structures annealed at 700°C. Synthesized BTN–BIT and SBT-BIT thin films exhibited good ferroelectric properties and excellence fatigue endurance. BTN–BIT thin films showed a Prvalue approximately 19.1µC/cm2and a memory window of 0.7V. Although a little smaller Prvalue and memory window were observed for the SBT–BIT thin films, the squareness of a P–E hysteresis loop was superior to that of BTN–BIT thin films. Also, the SBT–BIT thin films had more excellence fatigue endurance compared with BTN–BIT thin films.

Fabrication of Sr2Nb2O7 thin films by sol-gel processing

1995 ◽  
Vol 10 (3) ◽  
pp. 704-707 ◽  
Author(s):  
Alamanda V. Prasadarao ◽  
Ulagaraj Selvaraj ◽  
Sridhar Komarnenici
Keyword(s):  
Thin Films ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Precursor Solution ◽  
Si Substrates ◽  
Niobium Ethoxide ◽  
First Time ◽  
Gel Processing ◽  
Room Temperature Dielectric Constant ◽  
Sem Microstructure

Sol-gel Sr2Nb2O7 thin films were deposited on Si(100) and Pt-coated Si substrates for the first time by spin-coating. The Sr2Nb2O7 precursor solution was prepared from strontium metal dissolved in 2-methoxyethanol, acetylacetone, and niobium ethoxide. The formation of phase pure Sr2Nb2O7 occurred via an intermediate perovskite phase of composition close to Sr0.82NbO3. Crack-free Sr2Nb2O7 films of ∼0.4 μm thickness were deposited on these substrates using a single-coating followed by heat treatment at 850 °C for 12 h. SEM microstructure and thin film XRD results indicated the deposition of a grain-oriented film on the Pt-coated Si substrate. The room temperature dielectric constant and the loss values of the film measured at 10 kHz are 45 and 0.045, respectively.

Sign in / Sign up

Export Citation Format

Share Document