scholarly journals Faceted nanostructure arrays with extreme regularity by self-assembly of vacancies

Nanoscale ◽  
2015 ◽  
Vol 7 (45) ◽  
pp. 18928-18935 ◽  
Author(s):  
Xin Ou ◽  
Karl-Heinz Heinig ◽  
René Hübner ◽  
Jörg Grenzer ◽  
Xi Wang ◽  
...  

On terraces of crystalline surfaces vacancies created by ion impacts nucleate and form depressions which coarsen and finally lead to 3D morphology patterns. Depending on the crystal orientation, two fold, three-fold, four-fold, or six-fold symmetric patterns evolve on different surfaces.

2010 ◽  
Vol 22 (38) ◽  
pp. 4249-4269 ◽  
Author(s):  
Junhu Zhang ◽  
Yunfeng Li ◽  
Xuemin Zhang ◽  
Bai Yang

2001 ◽  
Vol 696 ◽  
Author(s):  
Dongqi Li ◽  
Chengtao Yu

We have observe a metal-on-metal growth mode in Co/Ru(0001) at elevated temperature, where self-assembled 3D dots and antidots in rather regular truncated pyramidal shapes are mainly attributed to a stress-driven mechanism. While good lattice match has been one of the major criteria to guide epitaxial growth, it is possible that well-chosen lattice mismatched systems could be utilized to fabricate strain-engineered regular magnetic nanostructure arrays with different sizes and periodicity. A linear alignment of self-assembled Co dots and stripes can be created along grooves on a Ru(0001) substrate. Our observations suggest that it may be possible to direct the alignment and positioning in self-assembly of complex patterns by means of substrate templating, which should be of general applicability beyond the Co/Ru system. Magnetically, the dots are ferromagnetic with in-plane single-domain state, while the thick films with antidots exhibit perpendicular stripe domains.


2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Bo Li ◽  
Yuan Si ◽  
Qian Fang ◽  
Ying Shi ◽  
Wei-Qing Huang ◽  
...  

AbstractSelf-assembled nanostructure arrays integrating the advantages of the intrinsic characters of nanostructure as well as the array stability are appealing in advanced materials. However, the precise bottom-up synthesis of nanostructure arrays without templates or substrates is quite challenging because of the general occurrence of homogeneous nucleation and the difficult manipulation of noncovalent interactions. Herein, we first report the precisely manipulated synthesis of well-defined louver-like P-doped carbon nitride nanowire arrays (L-PCN) via a supramolecular self-assembly method by regulating the noncovalent interactions through hydrogen bond. With this strategy, CN nanowires align in the outer frame with the separation and spatial location achieving ultrastability and outstanding photoelectricity properties. Significantly, this self-assembly L-PCN exhibits a superior visible light-driven hydrogen evolution activity of 1872.9 μmol h−1 g−1, rendering a ~ 25.6-fold enhancement compared to bulk CN, and high photostability. Moreover, an apparent quantum efficiency of 6.93% is achieved for hydrogen evolution at 420 ± 15 nm. The experimental results and first-principles calculations demonstrate that the remarkable enhancement of photocatalytic activity of L-PCN can be attributed to the synergetic effect of structural topology and dopant. These findings suggest that we are able to design particular hierarchical nanostructures with desirable performance using hydrogen-bond engineering.


Symmetry ◽  
2021 ◽  
Vol 13 (9) ◽  
pp. 1584
Author(s):  
SeongYong Cho ◽  
Masanori Ozaki

Blue phase (BP) liquid crystals, which self-assemble into soft three-dimensional (3D) photonic crystals, have attracted enormous research interest due to their ability to control light and potential photonic applications. BPs have long been known as optically isotropic materials, but recent works have revealed that achieving on-demand 3D orientation of BP crystals is necessary to obtain improved electro-optical performance and tailored optical characteristics. Various approaches have been proposed to precisely manipulate the crystal orientation of BPs on a substrate, through the assistance of external stimuli and directing self-assembly processes. Here, we discuss the various orientation-controlling technologies of BP crystals, with their mechanisms, advantages, drawbacks, and promising applications. This review first focuses on technologies to achieve the uniform crystal plane orientation of BPs on a substrate. Further, we review a strategy to control the azimuthal orientation of BPs along predesigned directions with a uniform crystal plane, allowing the 3D orientation to be uniquely defined on a substrate. The potential applications such as volume holograms are also discussed with their operation principle. This review provides significant advances in 3D photonic crystals and gives a huge potential for intelligent photonic devices with tailored optical characteristics.


2013 ◽  
Vol 15 (30) ◽  
pp. 12414 ◽  
Author(s):  
Jia Lin Zhang ◽  
Tian Chao Niu ◽  
Andrew T. S. Wee ◽  
Wei Chen

Polymer ◽  
2018 ◽  
Vol 158 ◽  
pp. 213-222 ◽  
Author(s):  
Baobao Chang ◽  
Konrad Schneider ◽  
Bo Lu ◽  
Roland Vogel ◽  
Guoqiang Zheng ◽  
...  

Nanomaterials ◽  
2016 ◽  
Vol 6 (11) ◽  
pp. 210 ◽  
Author(s):  
Shilin Huang ◽  
Guang Ran ◽  
Penghui Lei ◽  
Shenghua Wu ◽  
Nanjun Chen ◽  
...  

NANO ◽  
2008 ◽  
Vol 03 (03) ◽  
pp. 169-173 ◽  
Author(s):  
CHENG YANG ◽  
SEUNG-HEON RYU ◽  
YEONG-DAE LIM ◽  
WON JONG YOO

Self-assembled Si nanostructure arrays were formed in an inductively coupled plasma (ICP) reactor using SF 6/ O 2 plasma at noncryogenic temperature. It was possible to form nanopillar arrays of a mean diameter of ~100 nm and a mean height up to 4.77 μm over areas >100 cm2. The self-assembly of the nanostructures was studied as a function of time, bias RF-power, and O 2/ SF 6 ratio. It was found that the nanostructure arrays could be formed only when O 2/ SF 6 was in the range of 0.8 to 2.5. Two types of the self-assembled nanostructure arrays were formed at the different bias RF-power ranges: one was nanohole arrays and the other was nanopillar arrays. The hole-type nanostructure was formed when the bias power was low at ~10 W, while the pillar-type nanostructure was formed when the bias power increased to 30 W. It was also found that, the height of the nanostructure arrays increased with the onset of an etching time of 40 s, but it decreased after excessively long etching time as the nanostructure arrays could no longer sustain themselves. The correlation between the formation of nanostructures and plasma properties was investigated using OES, XPS, AFM, and SEM analyses. According to the analyses, sidewall passivation layers which were formed by the reaction of Si with F and O radicals generated from the SF 6/ O 2 plasma were responsible for giving rise to various nanostructure arrays.


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