Resistivity minima in the disordered cluster glass intermetallic compound Dy5Pd2: influence of quantum interference effects

RSC Advances ◽  
2015 ◽  
Vol 5 (96) ◽  
pp. 78406-78413 ◽  
Author(s):  
Tapas Paramanik ◽  
I. Das
Keyword(s):  
Intermetallic Compound ◽  
Temperature Dependence ◽  
Quantum Interference ◽  
Phonon Scattering ◽  
Weak Localization ◽  
Interference Effects ◽  
Resistance Minimum ◽  
Electron Interactions

A resistance minimum in the temperature dependence of Dy5Pd2 has been interpreted in terms of contributions from magnetic and phonon scattering, electron–electron interactions and weak localization.

1D AND 2D QUANTUM INTERFERENCE EFFECTS IN ELECTRON TRANSPORT IN Au FILM

2013 ◽  
Vol 27 (08) ◽  
pp. 1350026
Author(s):  
B. I. BELEVTSEV ◽  
E. Yu. BELIAYEV ◽  
Yu. A. KOLESNICHENKO
Keyword(s):  
Electron Transport ◽  
Quantum Interference ◽  
Weak Localization ◽  
Electron Interaction ◽  
Interference Effects ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
One Dimensional ◽  
Au Film ◽  
Nominal Thickness

We present transport properties of quench-condensed Au film with nominal thickness ≈3.56 nm and R□ ≈ 5 k Ω for T > 10 K. This film has weak nonmetallic temperature dependence of resistance with logarithmic behavior above 10 K and somewhat stronger dependence at low temperatures. Above 3 K only two-dimensional (2D) quantum interference effects in electron transport have been found; whereas, below 3 K both one-dimensional (1D) and 2D effects of weak localization (WL) and electron–electron interaction (EEI) can be distinguished. This reflects inhomogeneous structure of the film near the thickness-controlled metal-insulator transition (MIT).

scholarly journals Evidence of weak localization in quantum interference effects observed in epitaxial La0.7Sr0.3MnO3 ultrathin films

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Wei Niu ◽  
Ming Gao ◽  
Xuefeng Wang ◽  
Fengqi Song ◽  
Jun Du ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Quantum Interference ◽  
Weak Localization ◽  
Interference Effects

TEMPERATURE DEPENDENCE BEHAVIOR OF ELECTRICAL RESISTIVITY IN NOBLE METALS AT LOW TEMPERATURES

2014 ◽  
Vol 5 (3) ◽  
pp. 982-992 ◽  
Author(s):  
M AL-Jalali
Keyword(s):  
Experimental Data ◽  
Electrical Resistivity ◽  
Temperature Dependence ◽  
Concentration Dependence ◽  
Low Temperatures ◽  
Noble Metals ◽  
Phonon Scattering ◽  
Theoretical Models ◽  
Residual Resistivity ◽  
Electron Phonon Scattering

Resistivity temperature – dependence and residual resistivity concentration-dependence in pure noble metals(Cu, Ag, Au) have been studied at low temperatures. Dominations of electron – dislocation and impurity, electron-electron, and electron-phonon scattering were analyzed, contribution of these mechanisms to resistivity were discussed, taking into consideration existing theoretical models and available experimental data, where some new results and ideas were investigated.

Quantum interference effects in percolated metal networks

1994 ◽  
Vol 194-196 ◽  
pp. 1109-1110 ◽  
Author(s):  
M.E. Gershenson ◽  
P.M. Echternach ◽  
H.M. Bozler ◽  
A.L. Bogdanov ◽  
B. Nilsson
Keyword(s):  
Quantum Interference ◽  
Interference Effects
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